Bayyana Fasaha

Abubuwan da ke ƙasa an raba su don tunani kawai. Idan akwai cin zarafi na fasaha ko jagora mara kyau, jin daɗin tuntuɓar marubucin don cirewa ko gyara.

Menene TBC cell?

TBC na nufin TOPCon Back Contact. Yana haɗa TOPCon passivation (tunnel oxide da poly-silicon) tare da tsarin IBC interdigitated back contact, don haka mutane kuma suna kiranta da POLO-IBC cell.

Yana haɗa TOPCon tunnel oxide / poly-Si passivation tare da tsarin IBC back contact sosai. Wannan yana ba ku ƙarfin passivation na baya na TOPCon tare da fa'idar IBC na rashin inuwar gridline na gaba, tare da tattara duk halin yanzu a baya. Sakamakon shine mafi girman ƙarfin buɗe kewayawa da mafi girman ɗan gajeren kewayawa. Yana ɗaya daga cikin manyan hanyoyin N-type high-efficiency na gaba.

Babban fa'idodi

• Babu gridlines na ƙarfe na gaba, don haka asarar inuwa ta gaba an cire ta kuma Isc ya tashi

• TOPCon tunnel passivation yana rage haɗuwa ta baya kuma yana ɗaga Voc

• Tsarin interdigitated P/N back contact yana inganta hanyar tattara kaya kuma yana yanke juriya na jerin

• Idan aka kwatanta da daidaitaccen TOPCon da daidaitaccen IBC, yana daidaita ingancin passivation da haɗin tsarin

• Yana dacewa da yawancin kayan aiki na asali akan layin N-type na yanzu, don haka ana iya haɓaka tsarin mataki-mataki

Yadda yake kwatanta da sel na al'ada

• Daidaitaccen TOPCon: inuwar gridline na gaba, cikakken yanki TOPCon passivation a baya

• Standard IBC: tsarin haɗin baya, amma kariya ta dogara da silicon oxide / silicon nitride, babu tunnel poly-Si kariya

• TBC (POLO-IBC): tsarin haɗin baya na IBC tare da haɗaɗɗiyar kariyar tunnel ta TOPCon, don haka duka tsari da kariya an inganta su

Cikakken Bayanin Tsarin Aiki

Wafer mai shigowa → sharewa / cire lalacewar saw → tunnel oxide na baya + ajiyar poly-Si (LPCVD) → ajiyar mask na SiN na baya → buɗe laser na baya na farko (yankin boron) → doping boron (p-poly) → buɗe laser na baya na biyu (yankin phosphorus) → doping phosphorus (n-poly) → sharewa don cire wrap-around diffusion / BSG / PSG → ajiyar fim ɗin kariya na baya → buga mask ɗin kakin zuma don kare baya → gaban texturing + etching ware P/N → ajiyar fim ɗin kariya na SiN na gaba da baya → buga allon ƙarfe na baya → harba → gwajin lantarki → rarrabawa da tattarawa

Cikakkun Bayanan Tsari

3.1 Tsaftacewa da gogewa (sharewa + cire lalacewar saw)

Manufa: cire lalacewar saw, ƙazantattun ƙarfe na saman, barbashi da mai; goge wafer gefe ɗaya ko biyu don samun tushe mai tsabta, lebur na silicon kuma ajiye ajiyar tunnel daga baya ya zama daidai.

Babban kayan aiki: layin tsaftacewa da goge-goge na cikin ruwa, tankin goge-goge na alkaline, tankin tsaftacewa na acid.

Mahimman sinadarai: alkali mai ƙarfi (NaOH/KOH), HF, HCl, IPA, ƙari na texturing, surfactant.

Abubuwan da ake sa ido akai:

• Asarar nauyi na goge-goge: ma'aunin lantarki

• Hasken saman: mai gwada haske

• Rayuwar mai ɗaukar kaya iVoc: WCT-120 mai gwada rayuwa na wucin gadi

• Hoton sake haɗuwa mai ɗaukar kaya: mai gwada PL (R3-PL)

• Rashin laushi da tsabta na saman: microscope na gani

Kula da inganci: an cire lalacewar saw gaba ɗaya, babu tabo ko matakai a saman, asarar nauyi daidai, babu raguwar rayuwa a bayyane.

3.2 Tunnel oxide + poly-Si jiyya

Manufa: shuka wani siririn tunnel oxide (SiO₂) sannan kuma wani poly-Si Layer na ciki a bayan wafer, yana samar da tsarin TOPCon passivation na asali don ƙarfin fili da sinadarai passivation da ƙarancin sake haɗuwa a baya.

Babban kayan aiki: bututun LPCVD.

Tushen gas: SiH₄, O₂, N₂ (mai ɗauka / tsarkakewa).

Mahimman abubuwa:

• Kauri na Poly-Si: na'urar gwada kaurin poly, ellipsometer

• Kaurin Tunnel oxide: ECV, ellipsometer

• iVoc (WCT-120)

• Daidaituwar PL

• Juriya na Sheet (saka idanu akan poly na ciki kafin doping)

Kula da inganci: oxide sirara sosai kuma daidai, poly-Si mai yawa kuma babu ramuka, daidaituwar kauri mai kyau a kan wafer.

3.3 Sanya SiN mask na baya

Manufa: sanya wani silicon nitride (SiNₓ) mai yawa a kan poly-Si na ciki a matsayin mask mai toshewa don matakan bude laser da doping na gaba, don samar da yankunan doping masu zaɓi.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Muhimman abubuwa: kaurin SiN (spectroscopic ellipsometer), refractive index da daidaituwa, iVoc, daidaituwar PL.

Kula da inganci: mask mai yawa, babu ramuka, kauri daidai don tabbatar da warewar doping.

3.4 Bude laser na baya na farko (taga yada boron)

Manufa: cire SiN mask a kan yankin boron diffusion ta hanyar laser ablation na gida yayin da ake kiyaye intrinsic poly-Si a ƙasa, buɗe taga don p-type poly daga baya.

Babban kayan aiki: tsarin buɗe laser fiber / nanosecond ko picosecond, kayan aikin laser mai inganci.

Daidaita tsari: daidaita ƙarfin laser, maimaita mita, saurin dubawa da kuma haɗuwa da tabo don kawai cire SiN mask na sama kuma intrinsic poly-Si a ƙasa ba ta lalace ba, kiyaye tushen passivation.

Mahimman bayyanawa: duban microscope na gani na siffar tsagi, daidaiton gefe, da kuma ko poly Layer ya ƙone.

3.5 Doping boron na baya (p-poly)

Manufa: boron-diffuse intrinsic poly-Si a cikin yankin da aka buɗe don canza shi zuwa p-type heavily doped poly (p-poly), yayin da ake samar da BSG a saman. BSG daga baya yana aiki azaman blocking mask na halitta don phosphorus diffusion.

Babban kayan aiki: tube boron diffusion furnace.

Kayan aiki: tushen ruwa BBr₃; yanayi O₂, N₂.

Mahimman bayyanawa: juriyar takardar yankin p, daidaiton doping, daidaiton rufe BSG, daidaiton doping PL.

Kula da inganci: isasshen boron doping, juriya mai uniform, BSG mai ci gaba kuma cikakke ba tare da gibi na gida ba.

3.6 Bude laser na baya na dakika (taga phosphorus diffusion)

Manufa: cire sauran mask ɗin SiN don fallasa poly-Si maras nauyi a matsayin yankin n-type phosphorus doping, yayin da ake kiyaye BSG ɗin da aka riga aka kafa daga lalacewar laser.

Babban kayan aiki: tsarin laser patterning / buɗewa.

Matsayin aiki: sarrafa ƙarfin laser daidai don guje wa huda ta cikin BSG, kiyaye iyaka mai tsabta tsakanin yankunan P da N.

3.7 Doping phosphorus na baya (n-poly)

Manufa: phosphorus-diffuse poly-Si maras nauyi na taga na biyu don samar da n-type poly mai nauyi (n-poly). BSG ɗin da aka kafa a matakin da ya gabata yana aiki azaman mask mai daidaita kai, yana toshe phosphorus daga shiga yankin p-poly kuma yana samun keɓancewar yankunan P/N.

Babban kayan aiki: bututun phosphorus diffusion furnace.

Kayan aiki: tushen ruwa POCl₃; yanayi O₂, N₂.

Babban ka'ida: BSG mai raguwa yana aiki azaman shingen watsawa na halitta kuma yana hana gurɓatar phosphorus a yankin p-poly. Bayan watsawar phosphorus, BSG ta ɗan canza zuwa gaurayar boron-phosphorus oxide, wanda ke ƙara ƙarfafa keɓewa.

Babban siffa: juriyar shafi na n-zone, keɓewar iyakar P/N, lura da yanayin zubewa.

3.8 Tsaftacewa don cire watsawar kewaye (cire BSG/PSG)

Manufa: cire duk BSG, PSG da sauran abubuwan da suka rage a saman, da kuma cire gefen kewaye da yadudduka na doping don guje wa zubewa daga gefe.

Babban kayan aiki: layin tsaftacewa na jika mai ci gaba.

Babban sinadarai: galibi HF, tare da ƙari na acidic da tsarin acid mai buffer.

Taimakon aiki: bushewa da iska mai tsabta, bushewa da iska mai zafi.

Kula da inganci: an cire gilashin oxide gaba ɗaya, saman mai tsabta ba tare da saura ba, babu sauran kewaye a gefuna.

3.9 Sanya fim ɗin kariya na SiN na baya

Manufa: sanya fim ɗin kariya na SiN a kan tsarin P/N poly mai haɗaka na baya don karewa da kare yankin tuntuɓar baya da kuma toshe harin sinadarai a matakai na gaba.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Halayya: kauri na SiN, ma'anar refractive, daidaiton fim.

3.10 Rufin kakin baya (mask ɗin kariya)

Manufa: rufe baya gaba ɗaya da kakin kariya ta hanyar buga allo don kare tsarin haɗin baya P/N da fim ɗin SiN, hana gurɓacewar gaba daga kai hari ga ayyukan baya.

Babban kayan aiki: buga allo (tashar buga kakin).

Mai da hankali kan sarrafawa: cikakken buga kakin, babu tsallake bugu, babu ramuka, kyakkyawan rufe gefe don kare baya a duk lokacin.

3.11 Goge gaba da sinadari + cire kakin da tsaftacewa

Manufa:

1. Cire wuce gona da iri na doping da lalacewa a gaban wafer

2. Sanya gaban ya zama mai siffar dala don rage haske

3. Samar da keɓance gefe tsakanin yankunan P da N na baya ta hanyar goge gefe don rage zubar da wutar lantarki

4. A ƙarshe cire mask ɗin kakin baya don fallasa cikakken tsarin haɗin baya

Babban kayan aiki: layin goge da sanya siffa mai ruwa biyu.

Maɓallan sinadarai: alkali mai ƙarfi (NaOH), HF, ƙari na rubutu, etchant mai buffer.

Tushen iskar gas: iska mai tsafta da aka matsa, N₂ bushewa.

Kula da inganci: rubutun gaba iri ɗaya, yanayin pyramid mai cancanta, keɓewar P/N mai dacewa, babu hanyar zubewa, tsaftace kakin zuma ba tare da saura ba.

3.12 Fim ɗin kariya da hana haske na SiN na gaba da baya

Manufa: sanya fim ɗin kariya da hana haske na SiN a gaba don hana haske da kariyar saman; ƙara da inganta fim ɗin kariya na baya don ƙara inganta kariya da aminci.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Halayen: kaurin fim na gaba da baya, fihirisar refractive, tsawon rayuwar mai ɗaukar ƙarami, haske.

3.13 Buga allo na lantarki na baya da harbawa

Manufa: buga lantarkin azurfa-aluminum a yankin P na baya da lantarkin azurfa a yankin poly na n don samar da lantarkin taba mai haɗaɗɗiyar baya, sannan a yi amfani da harbawa mai zafi don samar da haɗin ohmic tsakanin ƙarfe da poly-Si mai ƙara.

Babban kayan aiki: buga allo na musamman don lantarkin baya, tanderun harbawa na layi.

Matakan mahimmanci: buga daidaitawar tsarin bayan electrode → bushewa → harba zafin jiki mai girma (samar da ohmic contact).

3.14 Dubawa da rarrabuwa na baya

Abubuwan da ake yi: dubawar EL (lahani, ƙananan tsagewa, zubar ruwa), gwajin lantarki IV (Voc, Isc, FF, Eff), dubawar bayyanar, rarrabuwa da rarrabuwa, tattarawa da ajiya.

Kayan aikin dubawa: mai gwada EL, mai gwada IV, tashar dubawar bayyanar.

Mahimman Kalubale da Abin da Ya Kamata a Mai da Hankali

Menene sassa masu wahala na fasahar TBC, kuma ina ya kamata a mai da hankali?

• Sarrafa daidaiton kauri na bakin ciki na tunnel oxide yana da wahala

• Matakan buɗe laser guda biyu suna buƙatar daidaiton daidaitawa sosai

• Kiyaye BSG self-aligned mask lafiya shine tushen tsari

• Tsagewar keɓewar P/N interdigitated yana da saurin zubar ruwa a gefe

• Buga tuntuɓar bayan electrode yana buƙatar daidaiton daidaitawa fiye da sel na al'ada

• Sarrafa raguwar rayuwar mai ɗaukar kaya a duk tsari yana da wahala

Mahimman sigogin SPC da za a kula

• Kauri na oxide na tunnel da kauri na poly-Si

• Halin buɗewar Laser da daidaitawar karkata ga matakai biyu

• Daidaiton juriyar takardar boron da phosphorus diffusion

• iVoc da PL minority carrier lifetime ana bin su a duk tsarin

• Halin haske na gaba da siffar rubutu

• EL micro-cracks, leakage, da matsayin keɓewar gefe

Ra'ayin Ooitech

TBC tana rayuwa ko mutuwa akan cikakkun bayanai, kuma BSG self-aligned mask shine jarumin shiru a nan tunda yana barin yankunan phosphorus da boron su daidaita kansu ba tare da mataki na uku na mask ba. Abin da muke kallo sosai akan layukan module shine yadda waɗannan ƙwayoyin baya masu high-Voc suke aiki a ƙasa a cikin stringing da lamination, saboda duk ƙarfe na baya yana canza wasan haɗin kai. Idan kana son ganin ainihin layukan module na N-type suna aiki, tashar YouTube ɗinmu www.youtube.com/ooitech tana da hotunan masana'anta da ya cancanci kallo.