Fasahar Tantanin Rana ta TBC (TOPCon Back Contact): Cikakken Jagorar Tsari

Bayyana Fasaha

Abubuwan da ke ƙasa an raba su don tunani kawai. Idan akwai cin zarafi na fasaha ko jagora mara kyau, jin daɗin tuntuɓar marubucin don cirewa ko gyara.

Menene TBC cell?

TBC na nufin TOPCon Back Contact. Yana haɗa TOPCon passivation (tunnel oxide da poly-silicon) tare da tsarin IBC interdigitated back contact, don haka mutane kuma suna kiranta da POLO-IBC cell.

Yana haɗa TOPCon tunnel oxide / poly-Si passivation tare da IBC back contact layout sosai. Wannan yana ba ku ƙarfin rear passivation na TOPCon tare da fa'idar IBC na rashin shading na gaba, tare da tattara duk wani halin yanzu a baya. Sakamakon shine mafi girman ƙarfin buɗe kewayawa da mafi girman ɗan gajeren kewayawa. Yana ɗaya daga cikin manyan hanyoyin N-type high-efficiency na gaba.

Babban fa'idodi

• Babu gridlines na ƙarfe a gaba, don haka asarar shading na gaba an cire shi kuma Isc yana tashi

• TOPCon tunnel passivation yana rage sake haɗuwa a baya kuma yana ɗaga Voc

• Tsarin P/N back contact interdigitated yana inganta hanyar tattara kaya kuma yana yanke juriya na jerin

• Idan aka kwatanta da daidaitaccen TOPCon da daidaitaccen IBC, yana daidaita ingancin passivation da haɗin tsarin

• Yana dacewa da yawancin kayan aiki na asali akan layin N-type na yanzu, don haka ana iya haɓaka tsarin mataki-mataki

Yadda yake kwatanta da sel na al'ada

• Daidaitaccen TOPCon: shading na gridline na gaba, cikakken yanki TOPCon passivation a baya

• IBC na yau da kullun: tsarin haɗin baya, amma kariya ta dogara da silicon oxide / silicon nitride, babu tunnel poly-Si kariya

• TBC (POLO-IBC): tsarin haɗin baya na IBC tare da haɗaɗɗiyar kariyar tunnel ta TOPCon, don haka duka tsari da kariya an inganta su

Cikakken Bayanin Tsarin Aiki

Wafer mai shigowa → sharewa / cire lalacewar zarto → tunnel oxide na baya + ajiyar poly-Si (LPCVD) → ajiyar mask na SiN na baya → buɗe laser na baya na farko (yankin boron) → doping boron (p-poly) → buɗe laser na baya na biyu (yankin phosphorus) → doping phosphorus (n-poly) → sharewa don cire wrap-around diffusion / BSG / PSG → ajiyar fim ɗin kariya na baya → buga mask ɗin kakin zuma don kare baya → gaban texturing + etching ware P/N → ajiyar fim ɗin kariya na SiN na gaba da baya → buga allon ƙarfe na baya → harbawa → gwajin lantarki → rarrabawa da tattarawa

Cikakkun Bayanan Tsarin Aiki

3.1 Tsaftacewa da gogewa (sharewa + cire lalacewar zarto)

Manufa: cire lalacewar zarto, ƙazantattun ƙarfe na saman, barbashi da mai; goge wafer gefe ɗaya ko biyu don samun tushe mai tsabta da lebur na silicon kuma a kiyaye ajiyar tunnel layer na gaba daidai.

Babban kayan aiki: layin tsaftacewa da goge-goge na cikin ruwa, tankin goge alkaline, tankin tsaftacewa acid.

Mahimman sinadarai: alkali mai ƙarfi (NaOH/KOH), HF, HCl, IPA, ƙari na texturing, surfactant.

Mahimman abubuwan sa ido:

• Asarar nauyi na gogewa: ma'aunin lantarki

• Hasken saman: mai gwada haske

• Rayuwar mai ɗaukar kaya iVoc: WCT-120 mai gwada rayuwa na wucin gadi

• Hoton sake haɗuwa mai ɗaukar kaya: mai gwada PL (R3-PL)

• Rashin laushi da tsabta na saman: microscope na gani

Kula da inganci: an cire lalacewar saw gaba ɗaya, babu tabo ko matakai a saman, asarar nauyi daidai, babu raguwar rayuwa bayyananne.

3.2 Tunnel oxide + poly-Si jiyya

Manufa: shuka wani siririn tunnel oxide (SiO₂) sannan a shimfiɗa poly-Si na ciki a bayan wafer, wanda ya zama tsarin TOPCon passivation na asali don ƙarfin fili da passivation na sinadarai da ƙarancin sake haɗuwa a baya.

Babban kayan aiki: bututun LPCVD.

Tushen gas: SiH₄, O₂, N₂ (mai ɗauka / tsarkakewa).

Mahimman abubuwa:

• Kauri na Poly-Si: na'urar auna kauri na poly, ellipsometer

• Kauri na Tunnel oxide: ECV, ellipsometer

• iVoc (WCT-120)

• Daidaituwar PL

• Juriya na Sheet (saka idanu akan poly na ciki kafin doping)

Kula da inganci: oxide sirara sosai kuma daidai, poly-Si mai yawa kuma babu ramuka, daidaituwar kauri mai kyau a fadin wafer.

3.3 Ajiye SiN mask na baya

Manufa: ajiye silicon nitride (SiNₓ) mai yawa a kan poly-Si na ciki a matsayin mask mai toshewa don matakan bude laser da doping na gaba, don samar da wuraren doping na zaɓi.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Abubuwa masu mahimmanci: kauri na SiN (ellipsometer spectroscopic), refractive index da daidaituwa, iVoc, daidaituwar PL.

Kula da inganci: mask mai yawa, babu ramuka, kauri daidai don tabbatar da warewar doping.

3.4 Bude laser na baya na farko (taga yada boron)

Manufa: cire abin rufe fuska na SiN a kan yankin boron diffusion ta hanyar laser ablation na gida yayin da ake kiyaye intrinsic poly-Si a ƙasa, buɗe taga don p-type poly daga baya.

Babban kayan aiki: tsarin buɗe laser fiber / nanosecond ko picosecond, kayan aikin laser mai inganci.

Daidaita tsari: daidaita ƙarfin laser, maimaita mita, saurin dubawa da kuma haɗuwa da tabo don kawai abin rufe fuska na SiN na sama ya cire kuma intrinsic poly-Si a ƙasa bai lalace ba, kiyaye tushen passivation.

Mahimman bayyanawa: duban microscope na gani na siffar tsagi, daidaiton gefe, da kuma ko poly Layer ya ƙone.

3.5 Doping boron na baya (p-poly)

Manufa: boron-diffuse intrinsic poly-Si a cikin yankin da aka buɗe don canza shi zuwa p-type poly mai nauyi (p-poly), yayin da ake samar da BSG a saman. BSG daga baya yana aiki azaman abin rufe fuska na halitta don phosphorus diffusion.

Babban kayan aiki: bututun boron diffusion furnace.

Kayan aiki: tushen ruwa BBr₃; yanayi O₂, N₂.

Mahimman bayyanawa: juriyar takardar yankin p, daidaiton doping, cikar rufe BSG, daidaiton doping PL.

Kula da inganci: isasshen boron doping, juriya mai uniform, BSG mai ci gaba kuma cikakke ba tare da gibi na gida ba.

3.6 Bude laser na baya na dakika (taga phosphorus diffusion)

Manufa: cire sauran mask ɗin SiN don fallasa poly-Si maras nauyi a matsayin yankin n-type phosphorus doping, yayin da ake kiyaye BSG ɗin da aka riga aka kafa daga lalacewar laser.

Babban kayan aiki: tsarin laser patterning / bude.

Matsayin aiki: sarrafa ƙarfin laser daidai don guje wa huda ta cikin BSG, kiyaye iyaka mai tsabta tsakanin yankunan P da N.

3.7 Doping phosphorus na baya (n-poly)

Manufa: phosphorus-diffuse poly-Si maras nauyi na taga na biyu don samar da poly mai nauyi n-type (n-poly). BSG ɗin da aka kafa a mataki na baya yana aiki azaman mask mai daidaita kai, yana toshe phosphorus daga shiga yankin p-poly kuma yana samun keɓancewar yankunan P/N.

Babban kayan aiki: tanderun phosphorus diffusion.

Kayan aiki: tushen ruwa POCl₃; yanayi O₂, N₂.

Babban ka'ida: ragowar BSG yana aiki azaman shingen watsawa na halitta kuma yana hana gurɓatar phosphorus a yankin p-poly. Bayan watsawar phosphorus, BSG wani ɓangare ya zama gauraye oxide na boron-phosphorus, wanda ke ƙara ƙarfafa keɓewa.

Babban siffa: juriyar takardar n-zone, keɓewar iyakar P/N, lura da yanayin zubewa.

3.8 Tsaftacewa don cire watsawar kewaye (cire BSG/PSG)

Manufa: cire duk BSG, PSG da ragowar saman ta hanyar sinadarai, da kuma cire gefen kewaye da yadudduka na doping don guje wa zubewar gefe.

Babban kayan aiki: layin tsaftacewa na jika na layi.

Mahimman sinadarai: galibi HF, tare da ƙari na acidic da tsarin acid mai buffer.

Taimakon tsari: bushewar iska mai tsabta, bushewa da iska mai zafi.

Kula da inganci: an cire oxide glass gaba ɗaya, saman mai tsabta ba tare da ragowar ba, babu ragowar kewaye a gefuna.

3.9 Bayan SiN rufin kariya na fim

Manufa: sanya fim ɗin kariya na SiN a kan tsarin P/N poly na baya don karewa da kare yankin tuntuɓar baya da kuma toshe harin sinadarai a matakai na gaba.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Halayya: kauri SiN, ma'aunin haske, daidaiton fim.

3.10 Rufin kakin baya (mask ɗin kariya)

Manufa: rufe baya gaba ɗaya da kakin kariya ta hanyar buga allo don kare tsarin tuntuɓar P/N da fim ɗin SiN da aka yi, don hana gurɓacewar gaba daga kai hari ga ayyukan baya.

Babban kayan aiki: buga allo (tashar buga kakin).

Mai da hankali kan sarrafawa: cikakken buga kakin, babu tsallake bugu, babu ramuka, kyakkyawan rufe gefe don kare baya a duk lokacin.

3.11 Goge gaba da sinadari + cire kakin da tsaftacewa

Manufa:

1. Cire wuce gona da iri da lalacewar yadudduka a gaban wafer

2. Yi rubutun gaba don samar da saman dala da yanke haske na gaba

3. Samar da keɓewar gefe tsakanin yankunan P da N na baya ta hanyar goge gefe don rage zubar da gefe

4. A ƙarshe cire mask ɗin kakin baya don fallasa cikakken tsarin tuntuɓar baya

Babban kayan aiki: layin goge da rubutun sinadari mai gefe biyu.

Key chemicals: strong alkali (NaOH), HF, texturing additive, buffered etchant.

Gas sources: clean compressed air, N₂ blow-off.

Quality control: uniform front texturing, qualified pyramid morphology, proper P/N isolation, no leakage path, clean wax stripping with no residue.

3.12 Front and rear SiN anti-reflection passivation film

Purpose: deposit a SiN anti-reflection passivation film on the front for both anti-reflection and surface passivation; add and optimize the rear passivation film to further improve passivation and reliability.

Babban kayan aiki: PECVD.

Tushen gas: SiH₄, NH₃, N₂.

Characterization: front and rear film thickness, refractive index, minority carrier lifetime, reflectance.

3.13 Rear electrode screen printing and firing

Purpose: print silver-aluminum electrodes on the rear P zone and silver electrodes on the n-type poly zone to form the interdigitated back contact positive and negative electrodes, then use high-temperature firing to form ohmic contact between the metal and the doped poly-Si.

Main equipment: dedicated back contact screen printer, inline firing furnace.

Matakan mahimmanci: buga daidaitawar tsarin lantarki na baya → bushewa → harba zafi mai zafi (ƙirƙirar haɗin ohmic).

3.14 Dubawa da rarrabuwa na ƙarshe

Abubuwan da ake yi: dubawar EL (lahani, ƙananan tsagewa, zubar da ruwa), gwajin lantarki na IV (Voc, Isc, FF, Eff), dubawar bayyanar, ƙididdigewa da rarrabuwa, tattarawa da ajiya.

Kayan aikin dubawa: na'urar gwajin EL, na'urar gwajin IV, tashar dubawar bayyanar.

Matsaloli Masu Wuyar da Abubuwan Da Ake Bukata Don Mai Da Hankali

Menene sassa masu wuyar fasahar TBC, kuma a ina ya kamata a mai da hankali?

• Sarrafa daidaiton kauri na bakin ciki na tunnel oxide yana da wuya

• Matakan buɗe laser guda biyu suna buƙatar daidaiton daidaitawa sosai

• Kiyaye rufin BSG mai daidaita kai shine tushen tsari

• Tsagewar keɓancewar P/N mai haɗaɗɗiya yana da saurin zubar da ruwa a gefe

• Buga lantarki na baya yana buƙatar daidaiton daidaitawa fiye da sel na al'ada

• Sarrafa raguwar rayuwar mai ɗaukar ƙananan ƙarfi a duk tsari yana da wuya

Mahimman sigogin SPC da za a kula da su

• Kauri na oxide na rami da kauri na poly-Si

• Halin buɗewar Laser da daidaitawar karkata ga matakai biyu

• Daidaiton juriyar takardar boron da phosphorus diffusion

• iVoc da PL minority carrier lifetime ana bin su a duk tsarin

• Halin haske na gaba da siffar rubutu

• EL micro-cracks, leakage, da matsayin keɓe gefe

Ra'ayin Ooitech

TBC tana rayuwa ko mutuwa akan cikakkun bayanai, kuma BSG self-aligned mask shine shuru jarumi a nan tunda yana barin phosphorus da boron zones su daidaita kansu ba tare da mataki na uku na mask ba. Abin da muke kallo sosai akan layukan module shine yadda waɗannan high-Voc back contact cells suke aiki a ƙasa a cikin stringing da lamination, saboda duk-rear metallization su yana canza wasan haɗin kai. Idan kana son ganin ainihin layukan N-type module suna aiki, tashar YouTube ɗinmu www.youtube.com/ooitech tana da hotunan masana'anta da ya cancanci kallo.