Kwayoyin TOPCon a ƙarƙashin Zafi mai Damp: Me yasa Bangaren Baya Ya Fara Kasawa
Teburin Abubuwan Ciki
Gabatarwa
TOPCon ta ɗauki mafi yawan kasuwar c-Si mai inganci, amma amincin filin na dogon lokaci har yanzu ba a kai ba. Wani wuri mai rauni yana bayyana a cikin nazarin zafi mai ɗanɗano: tarin passivation na baya. Wani bincike na kwanan nan (Tong et al., Sol. Energy Mater. Sol. Cells, DOI: 10.1016/j.solmat.2024.113188) ya gano ainihin abin da ke faruwa lokacin da gishirin sodium ya sauka a saman cell kuma ya zauna a ƙarƙashin 85°C/85% RH. Taƙaitaccen bayani — SiNₓ na baya shine wuri mai rauni, kuma fim ɗin ALD AlOₓ na bakin ciki yana gyara mafi yawansa.
Abubuwan da aka gano a gaba
Layin SiNₓ na baya shine raunin zafi-danshi. Sodium acetate (CH₃COONa) ya sa ƙarfin buɗe wutar lantarki (Voc) na baya ya ragu da 5.8% kuma ya tura juriyar jerin (Rₛ) sama da 450%.
Gishirin sodium suna hanzarta iskar shan iskar oxygen da asarar nitrogen. XPS ya nuna rabon Si/N na baya yana tsalle daga 1.3 zuwa 23, kuma O/N daga 1.6 zuwa 53.
Shingen ALD Al₂O₃ na 10nm ya yi babban bambanci — asarar PCE a ƙarƙashin gurɓatar CH₃COONa ta ragu daga 16% zuwa kawai 0.4%.
Kariyar gaba ta fi ƙarfi sosai. Layin AlOₓ/SiOᵧNᵣ mai yawa yana toshe yaduwar sodium, don haka gurɓata a can ta yi asarar PCE kawai 0.87%.
Abubuwan gurɓata guda biyu suna aiki daban: sodium acetate yana kai hari ga haɗin ƙarfe, yayin da sodium chloride (NaCl) yake iskar shan iskar oxygen na layin kariya.
Bayanin Farko
Tambayar asali tana da sauƙi a faɗi, da wuya a amsa: me yasa sel TOPCon ke rasa aiki a ƙarƙashin zafi-danshi lokacin da gishirin sodium ke kusa, kuma me yasa kariyar baya ta fi muni (Kyranaki et al., 2022)?
Inda gibin yake
Yawancin ayyukan da suka gabata sun mayar da hankali kan lalacewar haɗin ƙarfe (Iqbal et al., 2023), amma babu wanda ya yi nazari na tsari kan rushewar sinadarai na layin kariya da kansa. Gaba da baya an gina su daban - gaba shine AlOₓ/SiNₓ/SiOᵧNᵣ, baya shine SiNₓ akan poly-Si mai ƙara - kuma ba a taɓa kwatanta juriyar lalacewarsu kai tsaye ba (Feldmann et al., 2014). A kan haka, gurɓatattun abubuwa guda biyu (CH₃COONa vs. NaCl) an yi tunanin suna da hali iri ɗaya, amma ba haka suke ba (Li et al., 2021).
Samun wannan daidai yana da mahimmanci ga kuɗi na gaske. Ana siyar da tsire-tsiren PV bisa alkawarin rayuwa na shekaru 25 (Peters et al., 2021), kuma yanayin gazawar gefen baya da ke bayyana a ƙarƙashin zafi shine ainihin irin abin da ke cin wannan.
Hanyar
An kiyaye tsarin aiki kusa da tsarin samarwa na gaske: sel TOPCon na masana'antu → fesa gishirin sodium a gaba ko baya → haɓaka zafi mai sauri (85°C/85% RH) → siffanta lantarki da sinadarai → gwada shingen ALD AlOₓ → gano hanyar kariya.
What's new here
A gefen ka'idar, wannan shine bincike na farko da ya nuna asarar nitrogen a cikin SiNₓ na baya a matsayin babban abin da ke haifar da raguwar Voc. A gefen aiki, Layer AlOₓ na 10nm yana aiki akan kayan aikin ALD na masana'antu na yau da kullun kuma yana kashe kusan 0.01% a cikin ingantaccen aiki. Kuma a tsarin, ƙungiyar ta gina gwajin DH matakin tantanin halitta inda sa'o'i 20 ke wakiltar shekaru da yawa na tsufa a waje (Sen et al., 2023).
Sarkar tunani yana da sauƙin bi: gurɓataccen baya yana haifar da raguwar Voc mai kaifi, wanda ke nuna gazawar passivation kai tsaye. XPS sai ya tabbatar da halayen oxidation na SiNₓ da hanyar sodium diffusion da yake buɗewa. Ƙara Layer AlOₓ, toshe sodium, kuma hoton PL ya tabbatar da an danne lahani.
Hanyoyi
Shirya samfurin
| Abu | Cikakken bayani |
|---|---|
| Tsarin tantanin halitta | n-type TOPCon. Gaba: emitter boron-diffused + AlOₓ/SiNₓ/SiOᵧNᵣ, ARC. Baya: SiO₂/phosphorus-doped poly-Si + SiNₓ, ARC |
| Gurɓataccen abu | 0.155 mol/L CH₃COONa ko NaCl bayani, 0.3 g kowane samfurin, fesa gida |
| ALD shinge | 10nm AlOₓ, an ajiye shi a 150°C (Leadmicro QL200) |
| Zafi mai ɗanshi | 85°C/85% RH, sa'o'i 20 (ASLi environmental chamber) |
Yadda aka auna shi
Ma'aunin I-V (Pmax, Voc, FF, Jsc) ta hanyar tsarin LOANA (pv-tools).
Ingancin passivation ta hanyar ingantaccen tsawon rayuwar mai ɗaukar kaya (τ_eff).
Kimiyyar saman ta hanyar XPS da SEM-EDS.
Sakamako da tattaunawa
Lalacewar wutar lantarki
Gefen baya a fili yake mai rauni. CH₃COONa a baya ya sauke Voc da 5.8%, ya tura Rₛ sama da 450% (Tebur 1), kuma ya yanke ƙarfin PL da 37.3% (Hoto 3a). Haka maganin a gaba ya kashe kawai 0.87% PCE. Gishiri ɗaya, sakamako daban-daban sosai dangane da fuskar da ya buga.
Rushewar sinadarai na passivation
XPS a saman baya ya nuna rabon haɗin Si-O yana tashi sama (Hoto 5b), tare da rabon O/N atomic daga 1.6 a cikin sarrafawa zuwa 53 a cikin rukunin CH₃COONa. Hanyar ita ce asarar nitrogen — zafi mai ɗanɗano yana lalata SiNₓ kuma yana lalata passivation na saman.
Abin da shingen AlOₓ yake yi
Tare da 10nm ALD AlOₓ a wurin, asarar PCE a ƙarƙashin gurɓataccen CH₃COONa na baya ya ragu daga 16% zuwa 0.4%, kuma Voc ya tsaya (Hoto 6a). SEM-EDS ya nuna abun ciki na sodium ya ragu da 86% a cikin samfuran AlOₓ (Hoto 6c), kuma PL bai nuna kunnawa lahani ba (Hoto 6b). Shingen yana yin daidai abin da kuke so — yana hana sodium shiga.
Ƙarshe
Babban abubuwan da aka ɗauka
Layin SiNₓ na baya yana yin hydrolysis kuma yana oxidize a ƙarƙashin zafi mai ɗanɗano da gishirin sodium, wanda ke sa Voc ya ragu kuma Rₛ ya tashi (tare da goyon bayan XPS/EDS, Hoto 4-5). Layin AlOₓ na 10nm yana toshe yaduwar sodium kuma yana kiyaye asarar PCE na DH85 ƙasa da 1% (Hoto 6a). Kuma gaban AlOₓ/SiOᵧNᵣ multilayer yana da juriya ga lalata, don haka gurɓata a can ba ya yin tasiri sosai.
Dalilin amfaninsa
Shingen AlOₓ na iya shiga kai tsaye cikin samar da TOPCon mai yawa akan kayan aiki kamar Leadmicro QL200. Idan aka duba gaba, haɗa AlOₓ tare da SiNₓ a cikin rufin kwandon gilashi biyu na iya tsawaita rayuwar shuka a yankuna masu ɗanɗano.
Kadan daga tarihi
Tsarin TOPCon: oxide tunnel (SiO₂) tare da doped poly-Si passivating contact, wanda ke yanke sake haɗuwa a karfe (Feldmann et al., 2014).
ALD: ci gaban nano-film Layer-by-Layer, yana ba da daidaitaccen ɗaukar hoto na nanometer-scale AlOₓ.
Gwajin DH: 85°C/85% RH tsufa mai sauri don kwaikwayi lalacewar module a yanayin zafi.
SiNₓ passivation: silicon nitride mai hydrogenated, mai kyau don anti-reflection da passivation na saman, amma yana ɗauke da dangling bonds kuma yana hydrolyzes da sauri.
Manazarta
Tong H. et al., Mitigating contaminant-induced degradation in TOPCon solar cells via ALD AlOₓ barrier, DOI: 10.1016/j.solmat.2024.113188
Feldmann F. et al., Passivated rear contacts for high-efficiency n-type Si solar cells, Solar Energy Materials and Solar Cells 120 (2014) 270–274.
Li X. et al., Accelerated damp-heat testing of TOPCon cells using NaCl, Solar Energy Materials and Solar Cells 262 (2023) 112554.
Peters I.M. et al., The value of stability in photovoltaics, Joule 5 (2021) 3137–3153.
Ra'ayin Ooitech
Abin da ya fi fito fili a nan shi ne yadda yawancin labarin dogaro ya ta'allaka ne a cikin tarin rufin baya, ba taken ƙirar tantanin halitta ba. A kan layi na gaske, ƙarin matakin ALD AlOₓ na 10nm shine inshora mai arha don ayyukan yanayi mai ɗanɗano, kuma yana shiga cikin samar da tsarin samar da kayayyaki ba tare da wahala ba. Muna gina layukan samar da kayayyaki na turnkey daga ƙarshe zuwa ƙarshe, don haka muna kallon abubuwan da aka gano kamar wannan a hankali - ƙananan gyare-gyare a sama galibi suna yanke shawarar ko shuka zai tsaya tsawon shekaru 25. Idan kuna son ƙarin daga bene na masana'anta, tashar YouTube ta Ooitech (www.youtube.com/ooitech) tana da daraja a bi ta.
