Gabatarwar Samfur

Wani injiniyan tsari ya taɓa bayyana mini wannan yanayin.

Wata rana, hoton PL daga binciken samfurin boron-diffusion ya nuna wasu ƴan wafers da ke da bayyanannun zoben da'ira masu layi. Tunaninsa na farko shine ya jawo bayanan binciken shigowa na wannan batch: rayuwar 'yan tsiraru sama da 1500 μs, abin da aka ɗauka na oxygen precipitate ya wuce, yawan lahani na micro a cikin ƙayyadaddun. A kan takarda, kowane haske yana kore.

Ya kira lab don sake duba EBIC na yau da kullun. Babu abin da ya bayyana. Ya canza zuwa preferential etching tare da optical microscopy. Har yanzu yana da tsabta.

Amma waɗannan zobba a kan taswirar PL har yanzu suna nan. Ba su ɓace ba.

Binciken shigowa ya wuce, sake dubawa bai sami komai ba, kuma PL har yanzu yana nuna da'irar duhu. Wannan rashin daidaituwa uku shine ɗaya daga cikin mafi yawan asarar shiru da injiniyan tsari na N-type ke fuskanta.

Abokin hamayyar da ke bayansa shine abin da wannan labarin ya rarraba: lahani na zobe mai da'ira (CRD) a cikin N-type photovoltaic Czochralski single-crystal silicon. Yana ɗaya daga cikin mafi ƙarancin kisa na yawan amfanin ƙasa a cikin sel N-type, kuma a cikin mafi munin yanayi zai iya cinye 4% cikakken ingancin sel.

Daga P-Type zuwa N-Type, Injiniyoyi Sun Canza Abokan Hamayya

Bari mu fayyace abu ɗaya tukuna.

A zamanin P-type, babban tsohon abokin hamayya a gefen wafer shine boron-oxygen pair (BO defect): tantanin B-Cz PERC a ƙarƙashin haske na sa'o'i 12 na iya rasa 3-5% cikakke (lambar da aka sake dubawa a cikin littafin PhD na Vicari Stefani na 2022). P-type multicrystalline silicon kuma yana da LeTID, wanda a mafi munin yanayi zai iya raguwa 16%. Masana'antar gabaɗaya ta shafe fiye da shekaru goma tana yaƙi da waɗannan asarar da haske ke haifarwa, daga gyare-gyaren tsarin PERC zuwa UV-filtering encapsulants a gefen module.

A canjin N-type, masana'antar ta taɓa tunanin wannan yaƙin ya ƙare. Wafer N-type an yi su da phosphorus, don haka babu tilas B×O pairing kuma BO defect ba zai iya samuwa ba.

Amma mutane ba da daɗewa ba suka gano: BO ya ɓace, kuma oxygen precipitates (OP) sun tashi da kansu. Sun sanya wani ɓoyayyen ɓarna a wannan karon: concentric ring defects.

Li Guixiu daga Jami'ar Zhejiang (a cikin rukunin Farfesa Yuan Shuai) ya gabatar da wannan a taron CSPV na 21 a 2025, kuma ya buga aikin da ke da alaƙa a cikin Applied Physics Letters a cikin 2024. Tare sun bayyana shi a fili: ainihin lahani na zobe mai da'ira shine hazo oxygen wanda ya ɗan yi ƙanƙanta. Halayensa guda uku duk "görünmez" ne ta yanayi:

• Ƙarancin aiki na lantarki da sinadarai — ba irin hazo oxygen da kake gani da sauri ba

• Matsayin lahani mara zurfi (0.42-0.46 eV, kuma ma fi zurfi bayan PDG)

• Görünmez a yanayin asali — wafer ɗin da aka girma bai nuna komai ba; dole ne ka gama matakai masu zafi kamar diffusion da annealing kafin ya bayyana

Wannan batu na ƙarshe shine inda injiniyoyi ke ƙonewa: mai haɓaka ne mai jinkiri. A lokacin da kake ganin shi akan PL cell, asusun matakin wafer sun riga sun rufe.

Wannan Maƙiyi Ya Zaɓi Makaminsa — Kayan Aiki na Yau da Kullum Ba Zai Iya Taɓa Shi Ba

Lahani na zobe mai da'ira yana juyar da ra'ayin gargajiya cewa "idan za ka iya auna shi, to shi ne maƙiyi."

Nuna makamai daban-daban ga wafer ɗaya mai zoben da'ira:

Idan aka fassara zuwa harshen layin samarwa, jimla ɗaya ce: wannan maƙiyi yana zaɓar makaminsa. Kayan aiki na yau da kullun ba zai iya taɓa shi ba. A kan layi, kayan aikin da kawai ke kama shi kullum shine PL; don auna shi da gaske a dakin gwaje-gwaje kana buƙatar EBIC mai ƙarancin zafin jiki ko jan ƙarfe ado.

Wannan kuma shine dalilin da yasa injiniyoyi da yawa ke jin "bayanan duk sun wuce amma tantanin har yanzu yana mari ni a fuska." Ba a ƙirƙira bayanan ba. Makamin da ke hannun ba daidai ba ne.

Ma'aunin Fasaha

12 ppma: Layin Rayuwa ko Mutuwa ga Oxygen na Wafer N-Type

Tun da lahani na zobe mai da'ira shine haɗin oxygen, tushen shi ne yawan oxygen [Oᵢ] a cikin wafer.

Rahoton Li Guixiu ya zana layi bayyananne: [Oᵢ] > 12 ppma yana shiga yankin haɗin oxygen mai yawan aiki (wanda tsofaffin injiniyoyi suka sani da "wafer baƙin zuciya"); [Oᵢ] < 12 ppma yana shiga yankin OP ƙarami, wanda shine zobe mai da'ira da muke magana akai a yau.

12 ppma shine layin rayuwa ko mutuwa ga oxygen na wafer N-type (bisa ga ma'aunin SEMI M6 na kayan silicon, kusan 6×10¹⁷ cm⁻³). Bayanan masana'antu sun nuna fasahar tanderun lu'ulu'u guda ɗaya na yau da kullun na iya kaiwa kusan 12.5 ppma; idan aka rage, yawan amfanin ƙasa yana raguwa sosai. Matsayin oxygen da masana'antar wafer za ta iya kaiwa ya faɗi daidai kan layin da ke jawo lahani na zobe mai da'ira. Wannan shine dalilin da ya sa lahani na zobe mai da'ira ya zama ruwan dare a zamanin N-type.

Rahoton Li Guixiu ya ba da tabbataccen ƙarshe: a mafi munin yanayi, wafers da suka wuce 12 ppma [Oᵢ] na iya rasa har zuwa 4% cikakken ingancin tantanin halitta. "Mafi munin yanayi" a nan yana nufin matsanancin yanayin oxygen ya wuce 12 ppma + canjin jawo-ƙima yana haifar da rarraba guraben da bai dace ba + lahani na ingot kai da wutsiya suna taruwa. Ba matsakaita ba ne; layi na gaske sau da yawa yana ganin asara a kan tsari na 0.4-1%.

Abin lura: Li Guixiu na 2024 Applied Physics Letters bincike ya nuna cewa ko a cikin wafers da oxygen ke ƙasa da 7×10¹⁷ cm⁻³ (~14 ppma), zane-zane masu da'ira na iya haifar da har zuwa 0.86% cikakken asarar inganci. Wannan yana nufin haɗarin lahani yana nan har ma a ƙarƙashin 12 ppma. Riƙe 12 ppma shine ƙasa, ba layin gamawa ba.

Menene 4% cikakken yake nufi akan layin samarwa? Zuwa 2026, matsakaicin ingancin rukunin samar da N-type cell ya bazu zuwa matakai: TOPCon a 25.6-26.2%, HJT a 26.0-26.5%, BC a 26.5-26.8%. Layin da ke aiki akai-akai yana kiyaye canjin matsakaicin aiki a cikin ±0.05% cikakken; da zarar matsakaicin rukuni ya faɗi fiye da 0.1%, ana dakatar da layin don bincike kuma a kira bita na inganci. Faɗuwar 4% mafi muni daga lahani na zobe mai da'ira yana daidai da tura dukan rukuni daga "babban mataki" zuwa "ƙaramin mataki" ko ma "matakin sharar gida" — dukan tsarin fasaha na inganci yana shiga ciki.

Amma ga masana'antar wafer da cell, ainihin ciwo a cikin wannan littafin ba shine samar da wutar lantarki ba. Yana da cewa wafer masu ƙarancin inganci ba za a iya siyar da su ba:

• Below the customer's minimum efficiency bin means instant dead stock: abokan ciniki na yau da kullun gabaɗaya suna saita mafi ƙarancin sel N-type a sama da 25.4% (wasu manyan abokan ciniki suna saita su sama da haka). Idan matsakaicin batch ya faɗi ƙasa da 25%, abokin ciniki ba zai karɓa ba kuma za a iya amfani da shi a ciki ko a jefar da shi

• Siyar da aka rage darajar tana cin riba kai tsaye ta hanyar tazarar farashin bin: kowane bin da ya ragu yana rage farashi da 'yan cents zuwa dime a kowace watt; a kan batch na ɗaruruwan MW, tazarar na iya nufin miliyoyin zuwa dubun miliyoyin a cikin ribar da ke ɓacewa

• Samun layukan da'ira a cikin samfurin yana nufin binciken batch gabaɗaya da haɗarin mayarwa: da zarar abokin ciniki ya gano ta hanyar sake duba EL/PL, sarkar lissafi ta biyo har zuwa masana'antar wafer

Wannan shi ne lissafin da injiniya yake kallo da gaske — ba "yawan ƙarfin da tashar ke samarwa ya ragu" ba, amma "shin abokin ciniki zai karɓi wannan batch."

Me Ya Sa Wannan Matsala Ta Yi Muni a Zamanin N-Type

Irin wannan abu ya wanzu a zamanin P-type, amma bai yi wannan wahala ba. Dalilai uku suna ƙara ta a zamanin N-type.

Dalili na daya: canjin zafin thermal budget.

Tagar zafin tantanin halitta na N-type tsari ne daban da na P-type. Yaduwar phosphorus na P-type PERC yana kaiwa 800-850°C — ba mai zafi ba, amma hade da dogon annealing mai zafi zai iya gyara kananan lahani. A hanyar N-TOPCon, yaduwar boron yana kaiwa 1000-1050°C — zafi mafi girma, amma tare da lokutan zama da yanayi daban-daban, wanda a maimakon haka yana "kunna" lahani masu alaka da oxygen. HJT ya fi tsanani: duk tsarin yana da zafi kadan (kimanin 200°C), yana rasa taga bayan aiwatarwa na "high-temp anneal don narkar da lahani". Da zarar gefen wafer yana da lahani boye, gefen tantanin halitta ba shi da karfin ceto shi.

Dalili na biyu: manyan crucibles, mummunar shigar oxygen.

Cz mai diamita 300mm + manyan crucibles + dogon lokacin jawo yana sa jimillar oxygen da ke narkewa daga crucible na quartz ta karu sosai. A cikin tsarin ITRPV, layin manufa na [Oᵢ] na wafer N-type yana takurawa kowace shekara.

Dalili na uku: karancin gurbacewa yana sa "tsofaffin makamai" su kasa aiki.

Matsalolin haɗin oxygen sun kasance suna da yawa saboda gurɓacewar ƙarfe na ƙara aikin sake haɗuwa. Takardar Wu Ruokai da sauransu ta 2025 a cikin Solar Energy Materials and Solar Cells (DOI: 10.1016/j.solmat.2025.113739) sun auna wannan da EBIC:

• Haɗin oxygen na asali (babu gurɓatawa) → bambancin EBIC ≈2% (kusan "ganuwa")

• Haɗin oxygen bayan gurɓatar ƙarfe → bambancin EBIC ≈12% (aikin sake haɗuwa ya tashi 6×)

A cikin 'yan shekarun nan matakan gurɓatar ƙarfe sun ragu sosai, wanda ya sa haɗin oxygen ya zama mafi "ganuwa." Wafers ɗin baƙin ciki da tsofaffin injiniyoyi ke iya gani a PL ta gogewa sun ɓace, an maye gurbinsu da zobba masu haɗuwa waɗanda ke buƙatar makamai na musamman don ganowa. Wannan shine rashin daidaituwa tsakanin "lissafin gurɓatar ƙarfe" da "lissafin oxygen."

Lura: cewa "ƙarancin gurɓatawa yana sa iskar oxygen ta zama marar ganuwa" ba yana nufin "yawan gurɓatawa ya fi kyau" ba. Da zarar ƙarfe ya shiga, aikin haɗuwa da iskar oxygen ya ƙaru sau 6, yana haifar da lahani gabaɗaya. Rage gurɓatawa shine hanya madaidaiciya; kawai yana sa haɗarin "tsarkakakken iskar oxygen" ya zama da wuya a gano shi da tsofaffin hanyoyi. Don haka, kula da gurɓatawa da sarrafa iskar oxygen duka ana buƙata kuma ba za su iya maye gurbin juna ba.

Fa'idodin Fasaha

Fassarar Hanyar: Ɗaya daga cikin motsi a cikin ƙimar ja, Ɗaya daga cikin zoben striations

Mafi kyawun ɓangaren rahoton Li Guixiu yana bayyana tsarin zobe mai da'ira a sarari.

A cikin harshen layin samarwa: zobe mai da'ira ba ya faruwa saboda yawan iskar oxygen, amma saboda rashin daidaituwa na radial na guraben [V].

Rahoton Li Guixiu yana amfani da bayanan simulation na CGSim don nuna cewa a ƙayyadadden ƙimar ja, yawan radial na guraben a cikin silikon ingot yana da "yawa a tsakiya, ƙasa a gefe," yana bambanta da fiye da oda na girma. Ma'aunin FTIR kuma ya tabbatar da cewa rarraba radial na [Oᵢ] da kansa yana da daidaituwa sosai (tsakiya 6.0×10¹⁷ cm⁻³ vs gefe 5.1×10¹⁷ cm⁻³). Don haka "zoben" yana zana ta hanyar guraben, ba ta iskar oxygen ba.

Nukleation na haɓakar oxygen yana buƙatar "matsakaicin [V]": idan ya yi ƙasa da yawa ba zai iya nukleation ba, idan ya yi yawa kuma yana haifar da ramuka kai tsaye. Lokacin da saurin ja ya canza yayin ja, rarraba [V] a radial yana canzawa tare da shi, kuma wurin nukleation na OP yana motsawa tare da radius — haka ake "zana" zoben striations.

Layi ɗaya: saurin ja mai tsayayye, lahani suna taruwa; saurin ja mai canzawa, lahani suna zobe.

Yawancin injiniyoyin layi suna kuskuren tunanin cewa zoben concentric yana nufin "oxygen da yawa a gefe" kuma suna canza hanyar oxygen a yankin zafi — hanya mara kyau. "Zoben" ana zana shi ta hanyar canjin vacancy, ba ta hanyar rashin daidaiton yawan oxygen ba.

Aikace-aikacen Samfur

Layukan Tsaro Uku: Yadda Layin Samarwa Yake Yaƙar Wannan Yaƙi

Tare da bayyana tsarin, ga abin da injiniyoyi suka fi damuwa da shi: yadda ake yaƙar wannan? An tsara shi ta hanyar saka hannun jari daga babba zuwa ƙarami, daga nesa zuwa kusa da layi, lahani na zoben concentric suna da layukan tsaro uku.

Layi na ɗaya: rage tushen oxygen (matsananciyar yanke a girma na crystal)

Aikin ainihi: tura [Oᵢ] ƙasa da 12 ppma.

Babbar hujjar Li Guixiu ita ce bayanan da aka auna na MCz (magnetic Czochralski) — tare da [Oᵢ] da aka sarrafa a 4 ppma (~2×10¹⁷ cm⁻³), duka wafer ɗin da aka girma da kuma wanda aka yi annealing a 750°C/16h + 1000°C/8-16h suna nuna [Oᵢ] radial gaba ɗaya daidai, kuma lahon zobe mai da'ira ya ɓace.

Kudin ma a bayyane yake: MCz na buƙatar tsarin filin maganadisu, yana ƙara farashin kera ingot. Wannan kariyar ta dace da manyan masu yin wafer akan samfuran N-type masu daraja; ba kowane layi zai iya ɗauka ba.

Layi na biyu: daidaita tsari (aikin yau da kullun a girma crystal)

Ko da ba tare da MCz ba, akwai abubuwa da yawa da za a yi:

• Sarrafa canjin saurin ja — mabuɗin shine "tsayayye," ba "sauri." Gara a sadaukar da ɗan ingancin ja fiye da barin [V] ya canza

• Ja da aka yi da nitrogen — bayanan da aka auna daga rahoton Wang Pengfei na Jinko 2026: tsawon rayuwar mai ɗaukar kaya ya tashi da 7%, ingancin tantanin ya tashi da 0.01%. Kwayoyin nitrogen suna ɗaure guraben da suka wuce gona da iri, suna hana samuwar rami da haɓakar oxygen precipitate, kuma daga baya matakan zafi sun sake sakin nitrogen

• Rage zama a cikin taga 850-650°C — yayin sanyaya ingot, oxygen yana taruwa da sauri tare da taimakon guraben aiki; wannan taga zafin jiki shine "incubator lahani," don haka ku wuce ta cikin sauri gwargwado

Layi na uku: tantance wafer mai shigowa (ƙofar ƙarshe ta masana'antar tantanin halitta)

Yadda ake tantance wafer masu shigowa? Wang Pengfei ya ba da ma'auni guda biyu masu wuya:

• Yawan ƙananan lahani < 40 a kowace mm²

• Shaƙar haɗin oxygen < 0.5 (FTIR kololuwar sha a 1230 cm⁻¹)

Don hanyoyin HJT, ƙara biyu:

• Hoton PL don tantance "yankuna masu duhu masu kama da juyi" — kawai shaidar gani na lahani na zobe mai da'ira a gefen wafer

• Fi son mataki biyu na phosphorus pre-gettering (2nd PDG) fiye da mataki ɗaya — takardar Wu Ruokai ta tabbatar cewa ko bayan PDG, PCE na wafer mai lahani yana 0.4% cikakke ƙasa da daidaitattun wafer (mai lahani 24.68% vs daidaitaccen 25.08%, bayanan dakin gwaje-gwaje). Ko da yake wannan ƙaramin yanki ne na bayanan tantanin halitta na dakin gwaje-gwaje, girman yana aiki azaman tunani: 0.4% cikakke akan layin taro yana nufin dukan batch ya fadi bins biyu, yana rushe rarraba bin samfurin kuma yana haifar da matsalolin oda-iska — asara mai zafi fiye da littafin "nawa wutar"

Idan tsarin tantanin halitta ya ba da dama, shigar da anneal mai "narkar da lahani" kafin boron diffusion (1100°C saurin hawa, riƙe mintuna 10-30, saurin sanyaya) yana ba da kusan 1000 PL haske riba bisa ga rahoton Wang Pengfei, tare da kiyasin 0.02-0.03% ribar tantanin halitta. Wannan shine mafi ƙarancin canji da za ku iya saka a cikin layin da ke akwai.

Abubuwa Uku da Rahoto da Takardu Ba Su Fada Muku Ba

Don rufe fasahar fasaha, dole ne a bayyana iyakokin takardun ma.

Na farko, "cin 4% inganci" shine mafi munin yanayi bayan ketare layin. 12 ppma layin gargadi ne, ba "ketare shi kuma tabbas ka rasa 4%" ba. Bayan oxygen ya ketare wannan layin, idan canjin guraben ya taru, asarar tana iyo tsakanin 0 zuwa 4% cikakke; 4% shine rufin, kuma takardar Wu Ruokai ta nuna ainihin ragowar wafers marasa lahani da na yau da kullun shine 0.4% cikakke. Matakan bayanai guda uku suna da alaƙa kamar haka: 4% shine iyakar matsananciyar layin ketare + canjin guraben aiki + tara kai da wutsiya; 0.86% shine ma'aunin dakin gwaje-gwaje lokacin da iskar oxygen ta ɗan fi 12 ppma (Li Guixiu APL 2024); 0.4% shine ragowar bayan PDG (Wu Ruokai 2025). Idan ka daɗe a kan layi kuma abin da ya tara ya fi yawa, za ka kusanci wannan iyakar 4%. 12 ppma tana riƙe da layin ƙasa na "kar ka shiga yankin aikin sake haɗuwa mai yawa."

Na biyu, lissafin kuɗin MCz bai cika dalla-dalla ba. Rahotannin ilimi suna warware "za a iya yi"; injiniyoyi har yanzu suna lissafin "ko yana da daraja." A wane girman layi ne MCz ke daidaita? Wannan ya dogara da farashin N-type cell premium — a halin yanzu layukan samfurin HJT na sama na iya tallafawa, N-TOPCon na yau da kullun yana fama.

Na uku, haɗin nitrogen doping da HJT ba a rufe shi sosai a cikin littattafai. Shin nitrogen zai yi hulɗa da hydrogen a cikin tsarin HJT? Littattafan da ake da su galibi suna tabbatarwa akan hanyar N-TOPCon; bayanan hanyar HJT har yanzu ba su isa ba.

Takaitaccen Layi Daya

Zamanin P-type ya kasance game da "kawar da BO biyu"; zamanin N-type yana game da "kulle abubuwan da ke haifar da oxygen." Abokin hamayya ya canza kamanni, don haka makaman injiniya su ma dole su canza — Hoton PL yana kallon wurin, EBIC mai ƙarancin zafin jiki yana ƙididdigewa, [Oᵢ] < 12 ppma yana riƙe layin mutuwa, saurin ja yana tsayawa, PDG mataki biyu yana goyon baya.

Mai kashewa marar ganuwa ba shi da tsoro. Abin tsoro shine kawo makaman yau da kullum don yaƙar shi.

Ra'ayin Ooitech

Abin da ya ba ni mamaki a nan shi ne yadda makomar layin N-type ke yanke shawara a sama, a lokacin girma na crystal, tun kafin kowane kayan aikin tantanin halitta ya ga wafer. Zoben da ke kewaye da saurin ja mai motsi ba zai iya gyarawa gaba ɗaya a ƙasa ba, don haka layin tantanin halitta yana gadar da matsalar da bai yi ba. A kan layin samar da mu na module muna ganin gefen wannan — kyawawan wafers da aka ɓata ta hanyar karkatar da tsari, ko waɗanda aka cece ta hanyar tsauraran gwaji — wanda shine dalilin da ya sa horon hoton PL yake da mahimmanci a gefen module kamar yadda yake a binciken shigowa. Idan kana son ganin yadda wannan ke aiki a kan layin sarrafa kai na gaske, tashar mu ta YouTube a www.youtube.com/ooitech tana da hotunan masana'anta da yawa da suka cancanci kallo. Babban layi: riƙe 12 ppma, ci gaba da ja a hankali, kuma ka amince da PL fiye da takardu.

Manazarta

Li Guixiu (Jami'ar Zhejiang). Lalacewar Zobe Mai Ciki a cikin N-type Photovoltaic Czochralski Single-Crystal Silicon. 21st CSPV, 2025-11-27

Li G, Yuan S, Zhou S, et al. Rarrabuwar layuka a cikin n-type Czochralski silicon solar cells. Applied Physics Letters, 2024, 125(25)

Wang Pengfei (Jinko Solar). Halayen Ingancin PV Single-Crystal Silicon da Magance Lalacewa. 2026

R. Wu, et al. Tasirin phosphorus diffusion pre-gettering akan kaddarorin lantarki na lahani masu alaka da oxygen a cikin n-type crystalline silicon heterojunction cells. Solar Energy Materials and Solar Cells 290 (2025) 113739. DOI: 10.1016/j.solmat.2025.113739

B. Vicari Stefani. Binciken Lalacewar Bulk a cikin p-type Silicon Wafers da Solar Cells (PhD Thesis), 2022