Pinholes a cikin Tantanin TOPCon: Hanyar Mamaki zuwa Ingancin 26.55%
Teburin Abubuwan Ciki
Bayani
Ga wani abu da ya juya wani dogon zato a cikin silicon PV. Masu bincike sun gano cewa barin wasu 'ramuka' a cikin Layer SiOx na cell TOPCon da gangan na iya tura inganci zuwa 26.55%, maimakon rage shi.
Babban binciken: ƙananan ramuka a cikin oxide na tunnel sun rabu zuwa iyalai biyu. Ɗayan shine nau'in sake haɗawa (oxygen-depleted, inda poly-Si ke tuntuɓar c-Si kai tsaye, mara kyau), ɗayan kuma shine nau'in passivating (oxygen da ya rage yana zama a baya, yana passivating dangling bonds yayin da yake ba da damar tunneling, mai kyau). Nau'in passivating yana auna kusan 1.6 ± 0.2 nm × 1.4 ± 0.3 nm a cikin giciye, tare da yawan areal na 2 × 10¹² cm⁻². Wani samfurin Fischer ya nuna cewa abin da ke yanke shawarar aikin na'urar ba girman ramin ba ne, amma ko an yi passivation na ramin.
Tushen: Passivating pinholes don manyan yanki da ingantattun hasken rana na silicon tare da tunnel oxide passivated contact, Nat Commun 17, 2490 (2026). https://doi.org/10.1038/s41467-026-70511-2
Bayanan Bincike da Matsalar da Ta Tsaya
TOPCon yanzu shine babban tsarin n-type silicon. Runergy ya kai 26.55% akan 335 cm², Jinko ya tara TOPCon tare da perovskite zuwa 33.24%, kuma n-TOPCon mai gefe ɗaya yana da iyakar ka'idar 27.79%. Amma babu wanda ya tabbatar da rawar da ƙananan ramuka a cikin wannan SiOx Layer ke takawa.
Ra'ayin gargajiya: ƙaramin rami yana nufin poly-Si ya shiga cikin c-Si kai tsaye, passivation na oxygen ya gaza, labari mara kyau.
Gaskiyar ta fi rikitarwa. Oxide yayi kauri sosai (>1.7 nm) yana karewa da kyau amma ba ya iya wucewa da kyau, don haka FF ya rushe. Oxide yayi siriri sosai (<1.3 nm) yana nufin ƙarin pinholes, kuma yanzu kana damuwa game da rushewar Voc.
Marubutan sun raba kauri na oxide da rarraba iskar oxygen zuwa lokuta uku (sashen Gabatarwa):
Hali na 1: oxide mai kauri, kariya yayi kyau, tunneling bai dace ba
Hali na 2: oxide mai siriri tare da raguwar iskar oxygen, yana haifar da pinholes irin na sake haɗuwa (pinhole mara kyau na gargajiya)
Hali na 3: oxide mai siriri amma iskar oxygen har yanzu tana shiga cikin pinhole, yana haifar da pinholes masu kariya (sabon binciken nan)
Kafin wannan, ƙudurin HR-TEM bai isa ya ga abubuwa ƙasa da 2 nm ba. Littattafai sun ba da rahoton diamita na pinhole daga 5 nm zuwa 200 nm da yawa daga 10⁶ zuwa 10⁸ cm⁻², waɗanda duk "manyan ramuka" ne. Selective etching da c-AFM sun dogara da bambancin saurin etching tsakanin Si da SiOx, don haka yankunan da ke da ragowar iskar oxygen ba sa buɗewa ta hanyar etching. Pinholes masu kariya an kawar da su ta hanyar waɗannan hanyoyin. Shi ya sa Hali na 3 ya daɗe ba a gani ba.
Hanyar: Nau'ikan Pinhole Biyu (Hoto 2)
Aberration-corrected HAADF-STEM (JEM ARM200F plus Spectra 300, 200/300 kV) ya duba poly-Si/SiOx/c-Si interface a kan wafer mai inganci (25.40%) da kuma low-efficiency control (24.07%).
| Nau'i | Yanayin oxygen | Girma (high/low efficiency) | EELS O-K edge |
|---|---|---|---|
| Recombination | Oxygen-depleted, poly/c-Si lattice directly joined | Low-efficiency wafer ~1.37 × 1.35 nm | Deep oxygen valley |
| Passivating | Residual oxygen present, dangling bonds passivated | High-efficiency wafer 1.55 × 1.25 nm | Oxygen signal still visible, shallow oxygen valley |
Mahimmin batu: pinholes a kan high-efficiency wafer a zahiri suna karami, kuma suna riƙe oxygen da kyau. Duk girman sun fi girma da oda guda goma fiye da yadda littattafan farko suka ruwaito.
Sakamakon samfurin Fischer point-contact (Fig. 3d a cikin asali):
Yanki rami mai rami f = πr²/P², amma J₀ ba ya damuwa da f. Abin da ya fi rinjaye shi ne saurin sake haɗuwa da saman S a ramin.
Kusan f ≈ 0.1, da zarar S ≳ 10³ cm/s, J₀ ya tashi da ƙarfi, kuma yana cika sama da S > 10⁵ cm/s.
Ma'ana: mabuɗin babban aiki ba shine "sifili ramuka" ba, shine "ramuka da aka kare". Wannan shine babban haske na takarda gaba ɗaya.
A kan yawa, wannan ɗan juyin juya hali ne. Ƙididdiga daga X-Y orthogonal slicing a kan wafers 40 (high plus low efficiency) ya ba da 2 × 10¹² cm⁻² don karewa da 3 × 10¹² cm⁻² don ramukan sake haɗuwa, 4 zuwa 6 oda girma fiye da ƙimar adabi.
Dalilai uku sun taru: na farko, ra'ayi ya canza, don haka abubuwan da aka riga aka tantance sun zama bayyane; na biyu, samfuran wafers ne na masana'antu sama da 25%, ba tsarin gwaji ba; na uku, hanyar ita ce HAADF matakin atomic, kuma hanyoyin kai tsaye ba za su iya ganin yankin da ke ɗauke da oxygen sub-2 nm ba. Don kare kariya daga haɗuwa tare da jagorar haske daga samfuran TEM 50 zuwa 150 nm kauri, marubutan sun dawo da 4D-STEM ptychography tare da jagorar kauri, suna tabbatar da ƙididdigar yawa ba ta lalace ta hanyar tsinkayar tsinkaya ba.
Wurin Sauya Tsari: Oxidation Mataki Biyu tare da Goge Bayan da Poly Triple Coupling
Abubuwan da aka samo daga Hanyoyin Asali da SI (Tebur na Ƙari 1):
Oxidation mataki biyu: da farko O₂ oxidation zuwa bakin SiO₂, sannan matakin rashin isashshen oxygen (ba a shigar da oxygen ba). Nau'in mai wucewa yana buƙatar lokaci mai tsawo na kwararar oxygen, zafi mai girma, kwarara mai girma, da matsi mai girma, wanda ke taimakawa ga oxide mai daidaito da kauri.
POCl₃ diffusion: rage zafin ajiya da ɗan gajeren lokaci yana inganta poly crystallization kuma yana hana sake haɗuwa na pinholes.
Siffar goge bayan tana kan gaba da daidaiton kaurin oxide. Duk ukun dole ne a daidaita su tare don samar da Case 3 a tsaye.
Kwatanta Ayyuka (Bayanan Hard Fig. 4)
Samfuran poly-Si/SiOx mai gefe biyu mai daidaitacce (n-Si 1–3 Ω·cm, goge gefe biyu):
τeff: 8.9 ms babban inganci vs 2.96 ms sarrafawa (injection 5×10¹⁵ cm⁻³)
J₀: 2.6 vs 10.6 fA/cm²
ΔVoc da aka auna a 15.9 mV, amma bambancin J₀ kadai yana bayyana kusan ~11 mV. Sauran ~5 mV marubuta sun danganta ga ingantaccen rayuwar SRH na bulk. Tsarin annealing da aka inganta, yayin da yake haifar da pinholes masu rufe fuska, kuma yana cire ƙarfe masu gurɓata (suna ambaton aikin Krügener na 25% POLO). Gyara duka interface da bulk tare shine girke-girke don wuce 25%.
Ga FF, bambancin ya fi fitowa daga Rs:
Rs: 357 (high efficiency) vs 619 mΩ·cm² (control), Suns-Voc measured
ρc (TLM): 4.6 vs 5.4 mΩ·cm²
Maganar da ba ta dace ba: ta hanyar tunanin "pinholes masu yawa suna rage ρc", ƙarin pinholes masu rufe fuska a kan wafer mai inganci ya kamata ya rage ρc, kuma hakika 4.6 < 5.4. Amma marubuta sun ƙara wani juyi. Kusa da pinholes masu sake haɗuwa, phosphorus yana yaduwa cikin wafer, yayin da nau'ikan rufe fuska ke toshewa da oxygen (tsarin doping EDS a cikin Supplementary Fig. 10). Don haka tsarin doping da juriyar lamba suna bin dabaru daban-daban guda biyu, kuma ba za ku iya bayyana su da yawan pinhole kadai ba.
PL ya kasance daidai a duk faɗin wafer, kuma taswirar Corescan na rarraba Voc shima ya riƙe don daidaiton babban yanki.
Layi ɗaya don Masana'antu
Wannan takarda tana tura hanyar sadarwa ta TOPCon daga labari na binary na "oxide mara lahani vs zubar da pinhole" zuwa na uku: "pinholes na iya zama masu kyau kuma, muddin oxygen yana nan". Abin da masana'antar ke buƙatar yi na gaba ba shine damuwa game da rashin pinholes ba, amma daidaita sarkar polishing na baya zuwa oxidation zuwa poly deposition domin pinholes su ɗauki oxygen. Wafer na Daheng a 25.40% akan 333.3 cm² ya riga ya tabbatar da hanyar tana aiki.
Ra'ayin Ooitech
Abin da ya ba mu mamaki a nan shi ne yadda wannan ya dogara da sarkar tsari, ba kawai ƙirar tantanin ba. Wannan oxidation mai matakai biyu, daidaita POCl₃, da polishing na baya duk suna buƙatar tafiya tare shine irin haɗin da ke ɓacewa lokacin da aka haɗa layi guntu-guntu. A gefen module muna ganin irin wannan tsari, inda haƙurin lamination da stringing ke yanke shawarar ko tantanin mai kyau zai riƙe Voc ɗinsa. Idan kuna son kallon kusa kan yadda waɗannan matakai masu mahimmanci na hanyar sadarwa ke fassara zuwa filin samarwa na gaske, ziyarar mu na masana'anta akan YouTube (www.youtube.com/ooitech) sun cancanci biyan kuɗi.
