Tsarin Samar da TOPCon Solar Cell: Jagora Cikakke Mataki-mataki

Gabatarwa

Monocrystalline N-type TOPCon solar cells sun zama ɗaya daga cikin mafi kyawun fasahohin inganci a masana'antar photovoltaic. Samar da su ya ƙunshi dogon jerin matakai da aka sarrafa a hankali, ciki har da texturing, boron diffusion, laser SE, annealing, alkaline polishing, PE-poly, annealing, RCA cleaning, coating, metallization da gwaji da rarrabuwa na ƙarshe. A cikin wannan labarin, muna tafiya ta kowane babban matakin tsari kuma mu bayyana dalilin da ya sa yake da mahimmanci.

1. Rubutun (TEX)

Manufar Rubutun

Manufar rubutun shine cire layin lalacewa na inji a saman wafer da kuma samar da wani siffa mai kama da dala wanda ke kara haske. Ta hanyar rage haske mai haske, ana inganta gajeren kewaye (Isc), wanda a karshe yana kara ingancin canza wutar lantarki na tantanin halitta.

Wet etching shine babban tsarin rubutun a yau. Ions na karfe, layin lalacewa da sauran gurbacewa a saman wafer suna aiki a matsayin cibiyoyin sake hadewa. Tunda electrons da ramuka da aka raba dole ne su wuce kuma a tattara su a saman wafer, wadannan cibiyoyin sake hadewa suna rage rayuwar 'yan tsiraru, yana sa masu daukar kaya su sake hadewa kafin a iya fitar da su a matsayin wutar lantarki na waje. Layin oxide na saman da gurbacewar kwayoyin halitta suma suna shafar aikin ajiya da passivation na AlOx da SiNx, don haka tsaftace saman sosai yana da mahimmanci kuma yana shafar ingancin tantanin halitta kai tsaye.

Ka'idar amsawa

Rubutun yana dogara ne akan kaddarar anisotropic etching na crystalline silicon, inda alkali mai ƙarancin taro da abubuwan ƙara suke etching daidaitattun crystal orientations a farashi daban-daban. Matsakaicin etching akan (110) da (100) planes ya fi girma fiye da akan (111) plane. Bayan wani lokaci na etching, an bar tsarin "pyramid" guda huɗu da suka ƙunshi (111) planes a saman monocrystalline wafer.

Tsarin atomic ya bambanta a cikin crystal planes, yana haifar da farashi daban-daban na etching:

• (100) plane: tsarin atomic yana da ɗan sako-sako tare da ƙarin bayyanannun haɗin sinadarai, yana ba da mafi saurin etching.

• (110) plane: yawan atomic tsakanin (100) da (111), tare da sauri amma ɗan ƙaramin etching fiye da (100).

• (111) plane: tsarin atomic mafi matsewa, tare da haɗin sinadarai masu wuyar kai hari, yana ba da mafi saurin etching.

Matsayin Abubuwan Ƙara na Rubutu

Additives suna rage tashin hankali na silicon, suna inganta sakin kumfa na hydrogen da aka kafa yayin amsawa, kuma suna sa pyramids su zama daidai. Suna inganta jika tsakanin saman wafer da maganin amsawa, suna raunana ƙarfin etching na NaOH, suna ƙara wuraren nucleation da yawa, kuma suna inganta samar da manyan ƙananan pyramids. Gabaɗaya, kaddarorin additive suna da tasiri kai tsaye a kan saman pyramid textured.

Tsarin Aiki

Tsarin texturing yawanci ya haɗa da: tsaftacewa na farko tare da NaOH da H2O2 (tare da taimakon ultrasonic tsaftacewa a 60°C, sannan a wanke da ruwa mai tsabta) don cire kwayoyin halitta, ƙazanta na ƙarfe da lalacewa; alkaline texturing ta amfani da kusan 0.6% NaOH da 0.4% additive a 82°C na daƙiƙa 420 don samar da pyramid texture; tsaftacewa bayan aiki don cire ragowar kwayoyin halitta; tsaftacewa acid ta amfani da dilute acid (3.15% HCl + 7.1% HF) don neutralize ragowar alkali da cire oxide Layer; jinkirin cirewa pre-dehydration don cire ruwan fim ta hanyar tashin hankali; kuma a ƙarshe bushewa da 90°C hot air.

2. Boron Diffusion (B Diff)

Manufa

A ƙarƙashin zafin jiki mai girma, atom ɗin boron suna yaduwa zuwa saman wafer N-type don samar da haɗin PN. Filin da aka gina na haɗin PN yana raba masu ɗaukar hoto da aka samar don fitar da wutar lantarki a waje. Wafer P-type, tare da babban tattarawar rami, suna amfani da doping phosphorus don samar da haɗin; Wafer N-type, tare da babban tattarawar lantarki, suna amfani da doping boron.

Ka'idar Tsari

Boron trichloride (BCl3) yana wucewa ta bututun quartz a 800-900°C kuma yana amsawa da oxygen don samar da B2O3, wanda ke ajiyewa a saman wafer tare da iskar nitrogen kuma yana amsawa da Si don samar da atom ɗin boron, yana samar da Layer borosilicate glass (BSG). Atom ɗin boron sannan suna yaduwa cikin wafer don samar da haɗin PN. BCl3 ruwa ne mara launi mai hayaƙi ko gas mai nauyin 1.35 kg/m3, wurin narkewa -107.3°C da wurin tafasa 12.5°C. Ba mai ƙonewa ba ne, mai ban haushi da ƙamshi, yana rushewa cikin ruwa don samar da hydrogen chloride da boric acid tare da sakin zafi mai yawa. Matsakaicin samfurin B2O3, mai wurin narkewa 450°C da wurin tafasa 1860°C, yana kasancewa ruwa a duk tsari kuma yana lalata abubuwan quartz sosai.

Yaduwar boron ya fi wuya fiye da yaduwar phosphorus, don haka hanyar TOPCon tana sanya buƙatu mafi girma akan kayan aiki, gami da daidaito mafi girma, yanayin zafi mafi girma (yawanci sama da 1000°C) da lokutan yaduwa masu tsawo (samuwar fim yakan ɗauki har zuwa mintuna 240), wanda ke ƙara farashin kayan aiki da samarwa a matakin samar da junction.

Tsarin Aiki

Ana gudanar da yaduwa ta hanyoyi biyu. Yaduwar pre-deposition (matakin ajiyar BSG) tana amfani da ƙananan zafin jiki kuma tana kiyaye wafer a cikin yanayi mai cike da ƙazanta, don haka yawan ƙazanta a saman yana tsayawa; wannan ana kiransa yaduwa mai tushe na yau da kullun. Yaduwar sake rarrabawa tana tura boron daga BSG zuwa cikin wafer a yanayin zafi mafi girma a cikin yanayi mai wadatar oxygen ba tare da ƙazanta na waje ba; a nan yawan ƙazanta a saman yana canzawa da lokaci, wanda ake kira yaduwa mai iyaka, tare da rarraba Gaussian na ƙazanta.

Matakan aiwatarwa na yau da kullun sune: yin famfo na vacuum don kaiwa ga ƙananan matsa lamba; dumama zuwa zafin yaduwa (800-900°C); riƙe zafin yayin da ake ƙara rage matsa lamba; gano zubewa a ƙarƙashin ƙananan matsa lamba; pre-oxidation don samar da SiO2 Layer na 1nm don rage saurin mataki na gaba na yaduwa da kuma sa yaduwar boron ta zama daidai; yaduwa/deposition ta hanyar shigar da tushen boron don ajiya mai aiki da kuma turawa mai wucewa; ƙarin dumama sama da 900°C don ƙara yawan yaduwa da zurfi; post-oxidation don samar da SiO2 Layer sama da 100nm don sarrafa abun ciki na boron, zurfafa junction, samar da Layer mai kariya da kuma cire ƙazanta daga substrate; sanyaya zuwa zafin buɗe bututu mai aminci; da kuma karya vacuum tare da N2 don maido da matsa lamba na yanayi.

3. Cire BSG da Alkaline Etching

Cire BSG

Bayan yaduwar boron, bayan wafer da gefuna suna ɗauke da BSG Layer mai kauri (40-100nm oxide). Wannan Layer na gilashin borosilicate yana cutar da matakai na gaba kuma yana iya haifar da zubewar junction PN, don haka ana buƙatar etching da tsaftacewa na sinadarai bayan doping. Kafin alkaline etching, tsarin HF na gefe ɗaya na layi yana cire BSG na baya da gefuna, yayin da BSG na gaba ana kiyaye shi azaman mask yayin alkaline etching don kare tsarin gaba.

Wafer ɗin ya fara shiga cikin kayan aikin tsaftacewa na HF inline, inda kusan 60% HF ke narkar da BSG na baya zuwa cikin ruwa yayin da fim ɗin ruwa ke kare BSG na gaba, sannan kuma ana wanke shi da ruwa mai tsafta na kusan minti 0.5. Jerin ya haɗa da: shafa fim ɗin ruwa ta amfani da hydrophilicity na SiO2 don kare BSG na gaba; HF etching na BSG na baya da gefuna; matakin ruwa don sabunta fim ɗin ruwa mai yuwuwar gurɓata; wanke ruwa don cire ragowar HF; tsaftacewa da acid don cire ragowar ions na ƙazanta; da bushewa fim ɗin ruwa na gaba.

Alkaline Etching

Manufar alkaline etching ita ce cire haɗin PN a baya da gefuna don hana zubar da ruwa, da kuma samar da siffa mai daidaituwa da tsabta a baya don shirya don passivation na baya.

Akwai hanyoyi guda biyu. Rubutun na biyu yana kama da na farko, amma abin da ake ƙarawa dole ne ya rage saurin amsawa tsakanin BSG da alkali. Goge alkaline yana amfani da alkali mai yawan gaske da abubuwan ƙarawa don hanzarta amsawar alkali-silicon, raunana halayen etching anisotropic da samar da siffar goge mai haske sosai. Abin ƙarawa na etching alkaline yana kare BSG na gaba, yana rage saurin amsawarsa da alkali don hana etching fiye da kima, yana kiyaye BSG a matsayin abin rufe fuska don matakai na gaba, yana rage tashin hankali don sakin kumfa hydrogen, yana inganta jika da ƙara yawan nucleation.

4. Ajiya da Rufi

Wannan mataki yana ajiye Tunnel Oxide (TOX), Layer Poly-Si da Mask. Ajiya yana faruwa ne a cikin yanayin tururi mara iska kuma ana iya raba shi zuwa Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD) da Atomic Layer Deposition (ALD). PVD tana canza tushen abu zuwa atom, kwayoyin halitta ko ions kuma ta ajiye shi a kan substrate a ƙarƙashin matsin lamba; CVD tana samar da ajiya ta hanyar halayen sinadarai a kan substrate; kuma ALD tana ajiye abu Layer ta Layer a matsayin guda ɗaya na atomic.

Tunnel Oxide Layer (TOX)

Tunnel oxide layer yana dogara ne akan tasirin quantum tunneling, yana amfani da oxide mai sirara sosai (yawanci 1-2nm) a matsayin shinge. Tsakanin n-type silicon substrate da doped poly-Si Layer, yana ba da damar jigilar masu zaɓe: electrons (mafi yawan masu ɗauka) suna tunnel ta cikin oxide zuwa cikin poly-Si Layer, yayin da ramuka (ƙananan masu ɗauka) suna fuskantar babban shinge mai tsayi (kimanin 4.5-4.8eV) kuma ana toshe su. Hakanan yana haifar da lankwasawa da kuma wucewar filin, inda bambancin aikin aiki tsakanin doped poly-Si da substrate ke lankwasa makamashin haɗin gwiwa kuma ya samar da filin electrostatic wanda ke ƙara yawan masu ɗauka kuma ya kori ƙananan masu ɗauka, yana ƙara rage haɗuwa a kan iyaka.

Ana iya shirya oxide ta hanyar thermal oxidation (mai jituwa da LPCVD) ko ta PECVD, PEALD da thermal oxidation (mai jituwa da PECVD). Dangane da yawan fim, PEALD yana ba da mafi kyawun passivation amma a farashi mafi girma na kayan aiki, yayin da thermal oxidation da PECVD ke ba da ingantaccen tattalin arziki. ALD yawanci yana ba da kusan 0.7nm, thermal oxidation kusan 1.3nm, kuma tsarin tunneling gabaɗaya ana samun shi a kaurin da ke ƙasa da 1.6nm. LPCVD ya fi girma, yana da fa'idodi kamar sauƙin sarrafawa da ingancin fim mai girma, amma yana iya samar da wani nau'in doped poly-Si a gefen gaba wanda dole ne a goge shi, kuma yana da jinkirin fim. PECVD poly-Si sabuwar fasaha ce mai saurin ajiya, doping a wurin da ƙarancin wrap-around, amma balagaggen ta har yanzu yana buƙatar ingantawa kuma yana iya fama da ƙura, babban abun ciki na hydrogen da samuwar kumfa yayin annealing mai zafi.

Layer na Poly-Si

Polycrystalline silicon (Poly) an yi shi da ɗimbin ƙananan hatsin silicon, girman hatsi yawanci daga dubun zuwa ɗaruruwan nanometers da iyakokin hatsi a tsakaninsu. Layer na poly-Si yawanci ana yi masa doping da phosphorus don samar da n-type poly-Si mai yawan doping, yana inganta conductivity, yana ba da damar jigilar zaɓin mai ɗauka da kuma samar da kyakkyawar hulɗar ohmic tare da substrate.

Shirye-shiryen Poly-Si ya ƙunshi duka ajiya da doping. Ajiya yafi amfani da LPCVD ko PECVD tare da kauri kusan 100-150nm; fim ɗin amorphous yana canza crystallinity yayin annealing, yana canzawa daga gauraye microcrystalline-amorphous zuwa polycrystalline da kunna passivation. Don doping, LPCVD yawanci yana ajiye wani Layer na poly-Si na farko sannan ya kammala doping na phosphorus ta hanyar tanderun watsawa ko shigar da ion (ex-situ doping), tunda doping yayin ajiyar LPCVD a hankali zai kara rage shi. PECVD yana da ingantaccen fim kuma yana iya kammala doping na phosphorus yayin rufewa (in-situ doping). LPCVD, fasahar da aka fi amfani da ita don poly-Si, tana aiki ta hanyar lalata silane (SiH4) da zafi zuwa atom ɗin silicon waɗanda ke ajiye su cikin fim. Lura cewa poly-Si mai kauri yana haifar da asarar FCA (parasitic) mai tsanani da asarar gajeren kewayawa mai girma, kuma yawan doping na phosphorus yana ƙara shan FCA da asarar halin yanzu.

Layer na Mask

Yawanci, layin rufewa shine fim din SiO2 mai kauri kimanin 10nm wanda ake girma bayan ajiyar poly-Si don kare tsarin baya, musamman don hana hanyoyin jika na gaba daga cizon poly-Si. Don tabbatar da cewa tsarin baya bai lalace ba a cikin kayan aikin jika na tanki, bayan aikin poly, ana girma SiOx mask (kimanin 10nm) a saman baya ta amfani da silane da nitrous oxide (lura: silane da oxygen suna da hadarin fashewa a wuraren da ba na vacuum ba).

Matakan aikin sune: dumama a cikin vacuum don kawo wafer zuwa zafin da ake bukata; ajiyar tushen silicon na asali (gas kawai, babu RF, don cika bututu daidai da daidaita matsa lamba); ajiyar tushen silicon na asali (RF a kunne, don ajiyar fim mara nauyi wanda zai toshe da kuma kwantar da phosphorus daga poly mai nauyi); ajiyar tushen silicon mai nauyi (gas kawai); ajiyar tushen silicon mai nauyi (RF a kunne, don ajiyar fim din poly mai dauke da phosphorus); samar da oxide mask ta hanyar PECVD SiOx; da kuma share N2/Ar don fitar da SiH4 da N2O daga bututu don hana konewa lokacin bude kofar tanda.

5. Annealing

Manufar annealing shine don canza silicon amorphous da PECVD ya girma zuwa silicon polycrystalline, kunna atom na phosphorus da kuma ciyar da zurfin junction, da kuma samar da pinholes. Tsarin yana gabatar da BN2 (boron nitride) kuma a hankali yana zafi zuwa 890-920°C, inda ake tura BN2 a babban zafin jiki don kunna atom na phosphorus a cikin poly film da kuma samar da ingantaccen doping.

Akwai dangantaka tsakanin annealing da TOX: tare da tunnel oxide ba canzawa, haɓaka zafin annealing yana samar da ƙarin pinholes da in-diffusion, rage tuntuɓar resistivity da inganta FF yayin da har yanzu yana biyan buƙatun passivation; a daidai zafin annealing, tunnel oxide mai kauri yana samar da ƙarin pinholes da in-diffusion da kuma mafi girma saturation current.

6. Cire PSG da Tsabtace RCA

Yayin ajiyar PEALD na n+-poly-Si film, wani yanki na n+-poly layer yana samuwa a gaban wafer, wanda aka rufe da siririn Mask (SiOx) film. HF na gefe ɗaya yana cire SiOx, sannan wani alkaline bath yana cire n+-poly-Si na gaba. Wafer yana wucewa ta cikin tankin etching, tankin alkaline da tankin tsaftacewa don halayen sinadarai kafin bushewa.

Manufar RCA shine cire kewayawa da yin etching na gefe don hana zubewa, da kuma tsaftace wafer ta hanyar cire BSG na gaba da baya da mask da bushewa don shirya fina-finan kariya na gaba da baya. Tunda poly shine silicon polycrystalline, cire kewayawa yana amfani da alkaline polishing tare da high-concentration alkali da additives.

Additives na RCA suna tsaftace abubuwan inorganic da ragowar samfurori don inganta jika, aiki azaman masu kara kuzari don hanzarta haɗin OH- da silicon da hanzarta cire kewayawa da etching na gefe, da rage yawan alkali etching na silicon dioxide don kare BSG na gaba da mask na baya daga yawan etching.

Matakan aiki sune: inline HF don cire PSG da aka kafa a gaba da gefuna bayan N2 annealing yayin da ake kiyaye PSG na baya don kare poly na baya; alkaline polishing tare da NaOH da additive don cire poly na gaba da gefe da yawa; wanke alkaline don cire ragowar additives da datti; acid cleaning don neutralize ragowar alkali da cire ions na karfe; slow pull-out ta amfani da ruwan deionized na daki tare da robot don hana alamun ruwa; da bushewa a 90°C don hana ragowar ruwa a kan wafers da carriers.

7. ALD (Atomic Layer Deposition)

Jigon shimfidar atomic layer yana rufe kayan a matsayin shimfidar atomic guda ɗaya a kan substrate kuma ana siffanta shi da yanayin kame kansa, wanda shine tushen ALD. Ta hanyar lokaci ko sarari, substrate yana fuskantar nau'ikan precursors daban-daban. Lokacin da substrate yake cikin yanayin precursor A, A yana haɗuwa da sinadarai a saman har sai ya cika, sannan ya tsaya; idan aka fallasa shi ga precursor B, B yana amsawa da A da aka riga aka haɗa, yana samar da abubuwan da suka biyo baya har sai an cinye precursor na farko gaba ɗaya kuma amsawar ta tsaya kai tsaye, tana samar da shimfidar atomic da ake buƙata. ALD tana maimaita wannan amsawar don gina fim ɗin da ake so.

A bayan wafer, AlOx passivation yana rage yawan sake haɗuwa a bayan. Aluminum oxide yana ɗauke da tsayayyen caji mara kyau wanda yake a daidai inda aluminum oxide da silicon oxide suka haɗu a saman wafer; wannan babban yawan caji mara kyau yana tabbatar da ingantaccen passivation na filin. Aluminum oxide kuma yana ba da kyakkyawan passivation na sinadarai, yana cika dangling bonds a saman crystalline silicon kuma yana rage yawan yanayin haɗin gwiwa.

Matakan aiwatarwa sune: pre-deposition (gas kawai, babu RF, cika bututu daidai da daidaita matsa lamba, a kiyaye gajere don guje wa sharar gas da haɗari); deposition (RF a kunne, tare da TMA yana samar da plasma wanda ke amsawa da saman don samar da AlOx, sannan inert gas purging, maimaita har sau 40); da Ar purging don tura TMA da O2 daga bututu don hana konewar TMA lokacin buɗe ƙofar tanderun.

8. Gaban da Baya Silicon Nitride (SiNx)

Rufin SiNx yana da dalilai da yawa. Yana kare fuskar tantanin halitta, tunda silicon nitride yana da ƙarfi sosai wanda yake jure har zuwa 1200°C, kyakkyawan juriya na sinadarai ga kusan dukkanin inorganic acid da NaOH ƙasa da 30%, kuma babban insulator ne na lantarki. Yana ba da anti-reflection, tare da mafi kyawun refractive index na 1.96 a cikin iska; ƙara yawan silicon yana ƙarfafa surface passivation, kuma littattafai sun ba da rahoton saurin sake haɗuwa da saman yana faɗuwa ƙasa da 20cm/s a refractive index na 2.3, mafi kyawun bulk passivation tsakanin 2.1 da 2.3. Hakanan yana hana oxidation ta hanyar tsarinsa mai yawa. TOPCon front emitter passivation galibi yana amfani da aluminum oxide da SiNx:H film, yayin da rear passivation galibi yana amfani da poly-Si.

Hanyar kariyar SiNx tana aiki ta hanyoyi biyu. Kariyar sinadarai tana rage yawan lahani a kan iyaka ta hanyar rage ƙwayoyin da ba su da alaƙa, ko dai ta hanyar shuka wani saman saman da ke ba wa atom isasshen lokaci da kuzari don cika ƙwayoyin da ba su da alaƙa, ko kuma ta hanyar ajiye wani fim mai wadataccen hydrogen kuma a saki hydrogen yayin sintering don ya haɗu da ƙwayoyin da ba su da alaƙa. Kariyar tasirin filin tana rage yawan masu ɗaukar ƙananan da ke isa saman ta hanyar samar da filin lantarki kusa da saman wanda ke korar masu ɗaukar nauyi iri ɗaya, wanda ake samu ta hanyar rage yawan tattara sinadarai a saman ko ƙara wani dielectric Layer mai cajin tsayayye.

Matakan aiwatar da SiNx sune: pre-deposition (gas kawai, babu RF, cika bututu da daidaita matsa lamba); deposition 1-2-3 (RF a kunne, shigar da SiH4 da NH3 don samar da SiNx Layer uku tare da raguwar rabon Si-N a hankali, tunda rabon Si-N mafi girma yana ba da ma'anar refractive mafi girma); deposition 4 (RF a kunne, SiH4, O2 da NH3 suna samar da SiONx Layer); deposition 5 (RF a kunne, SiH4 da O2 suna samar da SiO2 Layer); da N2 tsarkake layukan da bututu don cire gas mai amsawa da hana fashewar SiH4 lokacin buɗe ƙofar tanderun.

9. Bugawar allo (Metallization)

Bayan an gama texture, diffusion da coating don kammala PN junction da passivation, tantanin halitta zai iya samar da wutar lantarki a ƙarƙashin haske. Don fitarwa da tattara wannan wutar, ana buga na'urorin lantarki na gaba da na baya a saman tantanin halitta, yawanci ta hanyar screen printing, bushewa da sintering.

Tsarin screen printing ya ƙunshi abubuwa biyar: squeegee, tawada (paste), allo, substrate (wafer) da dandamalin bugu. Aikin bugu mai dacewa (viscosity, ikon shear-thinning) shine sharadi na farko don bugu mai yawa, kuma yawan raga, diamita na waya da layin da aka tsara suna ƙayyade yanayin bugu. A cikin aiki, tawada yana wucewa ta cikin buɗaɗɗen allo, kuma squeegee yana matsa lamba yayin motsi a kan allo, yana matsa tawada daga buɗaɗɗen allo zuwa wafer. Viscosity na tawada yana sa shi manne a cikin iyaka, kuma squeegee yana kula da lamba madaidaiciya tare da allo da substrate, layin lamba yana motsawa tare da squeegee don kammala bugun.

Manne dole ne ya ba da kyakkyawan bugu don samar da yawa, kyakkyawar hulɗar ohmic tare da emitter don ƙarancin juriyar hulɗa da mafi girman FF, ƙarancin lalacewa ga emitter don iyakance asarar Voc da ke haifar da ƙarfe, da mafi ƙarancin juriyar yawa don rage asarar halin yanzu. Matakan aiwatarwa sune: bushewa don fitar da kwayoyin halitta a cikin manne; pre-sintering don narke gilashin frit, narke barbashi na azurfa da buɗe Layer na wucewa; sintering don narke ƙarin ƙarfe a cikin gilashin da haɗa shi tare; da sanyaya don ƙarfen da aka narke a cikin gilashin ya yi hazo a saman, yana samar da hulɗar ohmic tsakanin ƙarfe da semiconductor.

Ƙarshe

Tsarin masana'anta na TOPCon jerin matakai ne na musamman na rubutu, doping, wucewa, ajiya, annealing da ƙarfe, kowanne an ƙera shi don haɓaka zaɓin mai ɗauka da rage sake haɗuwa don ingantaccen canji.

Ra'ayin ooitech: ooitech ta yi imanin cewa babban ingancin TOPCon ya fito ne daga haɗin gwiwar tunnel oxide da fasahar wucewa mai wucewa, inda kowane tsafta, ajiya da annealing ke aiki tare don tura iyakokin zaɓin mai ɗauka da wucewar saman.

Karatun da ke da alaƙa: Tsarin Masana'antu da Fasaha na Photovoltaic Modules · Yadda Layin Samar da Panel na Solar ke Aiki