Gabatarwa

Yayin da jiragen sama na kasuwanci ke ci gaba da girma, jiragen sama suna buƙatar ƙarin wutar lantarki. Photovoltaics na sararin samaniya suna aiki a matsayin babban tushen wutar lantarki ga yawancin jiragen sama, don haka zaɓin fasahar selolin hasken rana yana tsara ko aikin ya yi nasara, yadda yake da tsada, da kuma yadda yake ci gaba da kasancewa a gasa a kasuwa.

A yanzu, akwai manyan hanyoyin fasaha guda uku: gallium arsenide (GaAs), p-type heterojunction (HJT), da p-type HJT/perovskite tandem cells. Idan muka kalli inda fasaha ke tafiya da kuma yuwuwarta na dogon lokaci, kuma muka zurfafa cikin mahimman fa'idodi da rashin fa'idodin kowace hanya, GaAs har yanzu tana kan gaba. Duk da kalubalen farashi, aikin da ba a iya misaltuwa, amincin da aka tabbatar a wurare masu tsananin yanayi, da kuma sarari mai yawa na rage farashi, GaAs ita ce mafi kyawun zaɓi don ayyukan sararin samaniya na kasuwanci masu daraja da aminci a yau da kuma cikin shekaru 3-5 masu zuwa.

Fa'idodin GaAs Cells masu Junction Uku

Babban inganci

Bandgap na GaAs (1.42 eV) yana cikin mafi kyawun kewayon ka'ida. Bugu da ƙari, sel masu junction da yawa suna tara yadudduka na GaInP, GaAs, da Ge waɗanda ke ɗaukar photons masu ƙarfi, matsakaici, da ƙarancin kuzari bi da bi, wanda ke faɗaɗa bakan da za su iya amfani da shi sosai. Sabbin sel GaAs masu junction uku na sararin samaniya yanzu sun kai ingancin canza wutar lantarki sama da 30%.

Babban aminci

Ƙarfin juriya na radiation da kwanciyar hankali mai zafi mai kyau sun sa waɗannan sel su dace da ainihin buƙatun ayyuka masu daraja da tsawon rai. Fa'idar aikin ya isa ya biya farashi mafi girma.

Fasaha mai girma tare da dogon tarihin aiki a sararin samaniya

A shekarar 1965, tauraron dan adam Venera 3 na tsohuwar Tarayyar Soviet ya zama na farko da ya yi amfani da sel GaAs. A shekarar 1995, tauraron dan adam na sadarwa na kasuwanci na farko MEASAT ya yi amfani da GaAs mai haɗin gwiwa guda ɗaya a matsayin babban rukunin wutar lantarki, kuma tsarin ƙirar hasken rana ya gina cikakken bayanan da ke tabbatar da cewa sel GaAs na iya biyan bukatun wutar lantarki na tsawon rayuwar jirgin sama. Daga nan, sel GaAs a hankali sun maye gurbin tsofaffin sel a matsayin tushen samar da wutar lantarki a kan jirgin sama, suna ci gaba mataki-mataki daga haɗin gwiwa guda ɗaya zuwa ƙirar haɗin gwiwa da yawa.

Me yasa aka tsara shi azaman Tsarin Haɗin Gwiwa Uku?

Kowane kayan semiconductor na iya ɗaukar photons masu ƙarfi fiye da bandgap ɗinsa yadda ya kamata. Photons masu ƙarancin ƙarfi ba za a iya amfani da su ba, yayin da photons masu yawan ƙarfi suna rasa rarar a matsayin zafi (asarar thermalization). Bandgap na sel mai haɗin gwiwa guda ɗaya ba zai iya daidaita daidai da bakan hasken rana ba. Misali, sel silicon mai haɗin gwiwa guda ɗaya: yana iya ɗaukar photons a cikin kewayon 0.3-1.1 μm (300 nm-1100 nm), yana aiki musamman a cikin band 0.38 μm-0.7 μm. Shi ya sa sel silicon mai haɗin gwiwa guda ɗaya ke da iyaka iyaka, tare da iyakar ka'idar kusan 29.7%.

Tantanin haɗin gwiwa uku yana raba aikin a cikin ƙananan tantanin halitta guda uku, yana yanke hasken rana zuwa sassa uku don kowane ƙaramin tantanin halitta yayi aiki a cikin mafi kyawun band ɗinsa. Wannan yana rage duka asarar thermalization da asarar rashin daidaituwa na bakan. A ka'ida, tantanin haɗin gwiwa da yawa na iya kusan kaiwa 50% inganci, fiye da abin da tsarin tantanin halitta guda ɗaya zai iya bayarwa.

Tsarin Tantanin GaAs Mai Haɗin Gwiwa Uku

Tantanin GaAs mai haɗin gwiwa uku an raba shi zuwa sassa uku: tantanin sama, tantanin tsakiya, da tantanin ƙasa. Kowane sashi yana amfani da kayan aiki daban-daban (yankin tushe) kuma yana taka rawa daban.

Tantanin sama

Yawanci AlGaInP / GaInP, tare da bandgap kusan 1.8-1.9 eV. Yana ɗaukar photons masu gajeren zango (ultraviolet, haske shuɗi). Tantanin sama yana shanye photons masu ƙarfi kuma yana rage asarar thermalization.

Tantanin tsakiya

Yawanci InGaAs ko GaAs, tare da bandgap kusan 1.42 eV. Yana ɗaukar photons masu matsakaici da dogon zango (kore, rawaya, ja). Tantanin tsakiya yana kula da tsawon zango na matsakaici zuwa dogo kuma yana ba da mafi yawan photocurrent.

Tantanin ƙasa

Yawanci Ge, tare da bandgap kusan 0.67 eV. Yana ɗaukar haske mai tsayin raƙuman ruwa (kusa da infrared). Tantanin ƙasa yana ɗaukar hasken infrared mai shiga sosai.

Yanzu bari mu bi ta abin da kowane Layer yake yi.

① Layer Tuntuɓar

Yana zaune a saman mafi girman Layer Cap, wannan shine Layer semiconductor wanda ƙarfen lantarki yake taɓa kai tsaye. Yawanci ana yin shi da n⁺⁺-GaAs ko n⁺⁺-GaInP. Babban aikinsa shine rage juriyar tuntuɓar—yawan doping yana taimaka masa ya samar da kyakkyawar tuntuɓar ohmic tare da ƙarfen lantarki kuma ya rage asarar lantarki. Hakanan yana kare yankin aiki, yana ware ƙarfen lantarki daga yankin aiki mai laushi a ƙasa (Layer taga, emitter, da sauransu) don hana lalacewar tsari.

② Layer Cap

Yana samuwa a saman layin taga kuma a ƙarƙashin rufin hana haske, yana tsakanin fim ɗin hana haske da layin tuntuɓar. Yawanci GaAs ne, ko da yake wasu ƙira suna amfani da abubuwan gani masu gudanar da haske (TCO) kamar ITO. Babban aikinsa shine taimakawa tattara wutar lantarki a matsayin 'electrode mai taimako,' yana aiki tare da layin tuntuɓar don tattarawa da fitar da wutar lantarki a gefe—musamman mai amfani ga ƙirar grid mai layukan sirara. Ana iya daidaita kaurinsa da ma'aunin haske don shiga cikin ƙirar gani da kuma ba da taimako na hana haske.

③ Layin Taga

Yana samuwa a saman emitter, yawanci ana yinsa da AlInP, AlGaInP, ko AlGaAs. Babban aikinsa shine rage sake haɗuwa a saman: yanayin babban bandgap na kayan yana nufin yana ɗaukar haske kaɗan, kuma yana samar da haɗin high-low wanda ke tura masu samar da haske (electrons) zuwa cikin emitter, yana rage asarar sake haɗuwa a lahani na saman. Hakanan yana aiki a matsayin 'laima,' yana kare yankin haɗin daga lalacewa yayin ayyuka na gaba kamar ƙafe electrode.

④ Emitter

Yana ƙasa da layin taga kuma sama da tushe, yana samar da haɗin PN tare da tushe. Yawanci N-type GaInP ne ko GaAs. Babban aikinsa shine ya zama "ingantaccen lantarki," yana tattara electrons da aka samar da haske kuma ya kai su ga kewayen waje. Hakanan yana daidaita ɗaukar haske da tattarawa - ta hanyar daidaita kauri da yawan doping, yana da kauri don ɗaukar haske mai gajeren zango amma ba mai kauri ba har masu ɗaukar kaya su sake haɗuwa yayin yaduwa.

⑤ Tushe

Yana ƙasa da emitter kuma sama da Layer BSF, wannan shine babban jikin haɗin PN. Yawanci p-type GaInP ne ko AlGaInP. A matsayin babban yanki mai ɗaukar haske, shine "doki mai aiki" na saman tantanin halitta, yana ɗaukar mafi yawan haske mai gajeren zango (shuɗi da ultraviolet), yana samar da nau'i-nau'i na electron-hole da aka samar da haske, kuma yana jigilar ramukan da aka samar da haske zuwa Layer BSF na baya ko lantarki.

⑥ Layer BSF (Filin Bayan Surface)

Yana ƙasa da tushe kuma sama da haɗin rami, yana samar da haɗin high-low tare da tushe a gefen baya. Kayan yawanci shine babban-bandgap p-AlGaInP, AlGaAs, da makamantansu. Babban aikinsa shine danne sake haɗuwa mai ɗaukar kaya: Layer BSF yana haifar da "shamaki" a bayan tushe wanda ke hana ramukan da aka samar da haske sake haɗuwa yayin da suke yaduwa zuwa ga na'urar lantarki ta baya, don haka yana ƙara ƙarfin lantarki da inganci.

⑦ Mai Nuna Hasken Rana

Yana tsakanin tantanin sama da tantanin tsakiya, ko tsakanin tantanin tsakiya da tantanin ƙasa. Shi ne Distributed Bragg Reflector (DBR) wanda aka girma daga kayan da ke da ma'aunin refractive high da low, kamar AlAs/AlGaAs ko AlInP/AlGaInP. Babban aikinsa shine mayar da hasken tsaka-tsaki zuwa dogon zango wanda tantanin sama da tsakiya ba su sha ba kuma yana shirin fita, don ba da damar sha na biyu wanda ke ɗaga jimlar halin yanzu da inganci.

⑧ Haɗin Rami

Yana tsakanin ƙananan tantanin, an yi shi da siraran yadudduka masu nauyi (kamar n++GaAs / p++GaAs). Kamar "ramin ƙididdiga," yana barin masu ɗaukar kaya da aka samar da haske su wuce da kyau yayin da yake kiyaye kowane ƙaramin tantanin da kansa na lantarki.

Tsarin tantanin halitta na tsakiya yayi kama da na saman, sai dai kayan aiki daban, don haka ba za mu sake maimaita shi a nan ba. A ƙasa mun taƙaita abin da ya bambanta game da tantanin halitta na ƙasa.

⑨ Buffer Layer

An sanya shi tsakanin tantanin halitta na ƙasa da na tsakiya, yana magance matsalar rashin daidaituwar lattice. Lokacin da kayan tantanin halitta na ƙasa (kamar InGaAs) bai dace da madaidaicin lattice na kayan sama (kamar GaAs) ba, buffer layer yana amfani da tsarin "graded" ko "metamorphic lattice" don sakin damuwa a hankali da "kame" threading dislocations, yana kiyaye su daga yankin aiki na tantanin halitta na ƙasa kuma ta haka yana inganta aikin tantanin halitta.

⑩ Tushen Tantanin Halitta na Ƙasa

Ana samunsa a gefen "kauri" na haɗin PN na tantanin ƙasa. Yawanci substrate ne na Ge nau'in p. Babban aikinsa shine ɗaukar hasken infrared mai tsayin raƙuman ruwa, yana aiki a matsayin babban aikin samar da masu ɗaukar hoto a cikin tantanin ƙasa.

Bayanai Kaɗan

A cikin alamomin nau'in P/N, N++/P++ da makamantansu suna nuna haske da nauyi doping. Tsarin tantanin halitta GaAs mai haɗin gwiwa uku da aka kwatanta a wannan labarin ya bar tsarin electrode, tsarin anti-reflection layer, da makamantansu don sauƙi.

Manazarta:

• Tantanin hasken rana mai haɗin gwiwa uku tare da mai nuna haske da hanyar kera shi - 2022-0804

• Tantanin hasken rana InGaP/InGaAs/Ge mai haɗin gwiwa uku tare da tsarin hana haske micro-nano da hanyar kera shi - 2018-0425

• Hanyar tantanin hasken rana mai haɗin gwiwa uku da tantanin hasken rana mai haɗin gwiwa uku - 2020-11-13

Ra'ayin Ooitech

Ooitech ta yi imani: tantanin GaAs mai haɗin gwiwa uku, ta hanyar yanke bakan hasken rana a cikin ƙananan sel guda uku, suna ba da inganci mai girma da amincin da aka tabbatar wanda ya sa su zama zaɓi na farko don ayyukan wutar lantarki na sararin samaniya masu daraja a yau.