Fahimtar Manyan Fasahohin Tantanin Rana Guda Uku: TOPCon, HJT, da Perovskite

Gabatarwa

Fasahar hasken rana ta photovoltaic ta ci gaba da sauri a cikin shekaru goma da suka gabata, tare da nau'ikan gine-ginen cell da yawa da ke tura inganci zuwa sabbin matakai. Wannan labarin yana bayyana ainihin ka'idodin aiki na hasken rana cell, sannan ya rarraba manyan fasahohin zamani guda uku da ke tsara masana'antar a yau, kuma ya rufe da kallon kula da inganci a samar da cell.

Yadda Hasken Rana PV Cell Ke Aiki

Tantanin hasken rana yana canza haske zuwa wutar lantarki, amma ba dukkan photons masu shigowa ke ba da gudummawa daidai ba. Fahimtar inda ake rasa makamashi shine mataki na farko don gina ingantattun tantanin halitta.

• Photons masu ƙarfin da ke ƙasa da bandgap ba a sha su ba kuma suna wucewa ta cikin tantanin halitta kawai.

• Photons masu ƙarfin da ke sama da bandgap ana sha su kuma suna haifar da nau'i-nau'i na electron-hole, amma ƙarin ƙarfin photons masu ƙarfi yana ɓacewa a matsayin zafi.

• Rarraba caji da jigilar masu ɗaukar kaya da aka samar suna haifar da asara a mahaɗin pn.

• Asarar sake haɗuwa tana faruwa yayin jigilar mai ɗaukar kaya.

• Juriyar tuntuɓar tana gabatar da raguwar ƙarfin lantarki, yana haifar da asarar ƙarfin lantarki na tuntuɓar.

Rage Asarar Lantarki

• Zaɓi wafers masu kyakkyawan tsarin crystal da nau'in da ya dace.

• Haɓaka ingantattun dabarun samar da mahaɗin pn.

• Haɓaka ingantattun dabarun passivation.

• Ɗauki ingantattun dabarun tuntuɓar ƙarfe.

• Aiwatar da ingantattun fasahohin filin gaba da baya.

Rage Asarar Haske

Don rage asarar haske da haɓaka ingancin tantanin halitta, masana'antar ta samar da hanyoyi da fasahohi daban-daban na kama haske. Waɗannan sun haɗa da sassaƙa saman wafer don rage haske mai tunkiya, suturar hana tunkiya a gaba, suturar tunkiya a baya, da rage yankin inuwa na layin grid.

TOPCon

TOPCon, wanda kuma aka sani da fasahar tuntuɓar da aka rufe, ana ɗaukarsa a matsayin fasahar tantanin halitta mai zuwa bayan PERC. Idan aka kwatanta da sauran sabbin fasahohi masu yuwuwa kamar HJT da IBC, TOPCon na iya haɓakawa kai tsaye daga layukan PERC ko PERT da ake da su. Sakamakon haka, masana'antun da ke son haɓaka layukan samar da su na buƙatar jari kaɗan, yayin da suke samun ingantaccen haɓaka kusan 1%.

Gaban tantanin halitta TOPCon da gaske yana kama da na al'ada N-type ko N-PERT, wanda ya ƙunshi emitter boron (p+), Layer na rufewa, da Layer na hana tunkiya. Babbar fasaha tana cikin tuntuɓar da aka rufe a baya: bayan wafer yana ɗauke da siririn Layer oxide (1–2 nm) tare da fim ɗin silicon mai gauraya micro/amorphous mai ɗauke da phosphorus. Don aikace-aikacen fuska biyu, ana yin ƙarfe ta hanyar buga allon Ag ko Ag-Al a gaba da allon Ag a baya.

Tunnel Oxide Passivated Contact

Tunnel Oxide Passivated Contact (TOPCon) ya ja hankali sosai a kwanan nan saboda yana samun ingantaccen canjin wutar lantarki na 25.7%. Tsarin TOPCon ya ƙunshi ƙaramin tunnel oxide da phosphorus (P) doped polysilicon contact layer. Ana iya yin P-doped polysilicon layer ta hanyar crystallizing a-Si:H ko ta hanyar sanya polysilicon kai tsaye ta amfani da LPCVD. TOPCon ya fito a matsayin zaɓi mai ban sha'awa a cikin fasahohin hasken rana masu inganci.

HJT Heterojunction

Fasahar Heterojunction (HJT) wata hanya ce ta kera hasken rana wadda ta kasance tana haɓaka cikin shekaru goma da suka gabata. A halin yanzu, tana ɗaya daga cikin hanyoyin da suka fi dacewa don haɓaka inganci da fitarwar wutar lantarki zuwa matakan girma, har ma ta wuce aikin fasahar PERC da ta fi yawa a masana'antar. HJT cells sun haɗa fasahohi biyu daban-daban a cikin ɗaya: crystalline silicon da amorphous thin film. Yin amfani da waɗannan fasahohin tare yana tattara ƙarin makamashi fiye da amfani da ɗaya kaɗai, yana kaiwa ga inganci na 25% ko sama.

Tsarin HJT Cell

Ta amfani da wafer monocrystalline a matsayin tushe, ana ajiye fim ɗin a-Si:H na 5-10 nm sannan kuma fim ɗin a-Si:H na p-type a jere a gaban wafer da aka tsaftace kuma aka yi texture, yana samar da p-n heterojunction. A bayan wafer, ana ajiye fim ɗin intrinsic na 5-10 nm da fim ɗin a-Si:H na n-type don samar da filin baya. Ana ajiye fim ɗin oxide conductive transparent, sannan a ƙarshe screen printing yana ƙirƙirar na'urorin tattara ƙarfe a saman bangarorin biyu, yana gina tantanin HJT mai symmetrical.

Fa'idodin Tantanan HJT

• Sassauci da daidaitawa — An haɓaka wannan fasaha don kyakkyawan iyawar samarwa ko da a cikin yanayi mai tsananin gaske. HJT panels suna da ƙarancin zafin jiki fiye da panels na al'ada, suna tabbatar da babban aiki a yanayin zafi na waje mai girma.

• Tsawon rayuwa da ake tsammani — A matsakaita, thin-film PV modules na iya wuce shekaru 25, yayin da HJT cells na iya ci gaba da aiki na tsawon fiye da shekaru 30.

• Inganci mafi girma — Yawancin fale-falen heterojunction a kasuwa a yau suna da inganci tsakanin 19.9% da 21.7%, babban ci gaba fiye da sauran ƙwayoyin monocrystalline na al'ada.

• Rage farashi — Silikon amorphous da ake amfani da shi a cikin fale-falen HJT fasaha ce mai rahusa ta PV. Idan aka kwatanta da sauran fasahohi, wannan hanyar hasken rana na bakin ciki yana buƙatar ɗan gajeren lokacin kera. Godiya ga sauƙaƙan tsarinsa, HJT ya fi araha fiye da sauran hanyoyin.

Perovskite

A cikin 2009, an fara amfani da kayan perovskite don samun ingancin photovoltaic na 4%. A shekara ta 2021, ƙwayoyin hasken rana na perovskite guda ɗaya (PSC) sun kai inganci na 25.5%. Saurin ci gaban ƙwayoyin perovskite ya sa su zama tauraro mai tasowa a fagen PV kuma ya haifar da sha'awa sosai a cikin ilimi. Saboda hanyoyin aikin su har yanzu sababbi ne, akwai dama da yawa don ƙarin nazarin ilimin kimiyyar lissafi da sinadarai na perovskite.

Tsarin Kwayar Perovskite

Mafi yawan tsarin hasken rana na perovskite na ci gaba sun dogara ne akan abubuwa biyar: oxide mai gudanarwa mai haske, Layer na jigilar lantarki (ETL), perovskite, Layer na jigilar rami (HTL), da lantarki na ƙarfe. Fahimta da inganta matakan makamashi da hulɗar abubuwa daban-daban a waɗannan wuraren haɗin gwiwa wani yanki ne na bincike mai ban sha'awa wanda har yanzu ana tattaunawa akai.

CaTiO3

Perovskite shine sunan ma'adinai, wanda Rose ya gano a shekara ta 1839 a cikin duwatsun dutsen Ural kuma aka sanya masa suna bayan masanin ilimin ƙasa na Rasha Perovski. Kayan Perovskite suna da ƙarancin yuwuwar sake haɗawa da jigilar kaya mai girma, yana sa su zama kayan aiki masu kyau don hasken rana.

Hanyoyin Samar da Fim na Perovskite

Mabuɗin inganta ingancin canjin wutar lantarki na hasken rana na perovskite yana cikin inganta yanayin fim. Hanyoyin samar da fim da ake amfani da su a dakin gwaje-gwaje sune ajiya mataki ɗaya ko mataki biyu. Don biyan buƙatun manyan wurare, fina-finai na perovskite masu rahusa, ana kuma amfani da kayan aiki kamar slot-die coating, bugu, da fesa don kera hasken rana na perovskite.

Makomar Perovskite

Bincike na gaba akan perovskite zai fi mayar da hankali kan rage sake haɗuwa ta hanyoyi kamar passivation da rage lahani, da kuma inganta aiki ta hanyar haɗa perovskites masu girma biyu da kayan haɗi mafi inganci. Matsakaicin cire caji na iya canzawa daga kayan halitta zuwa kayan inorganic don inganta aiki da kwanciyar hankali. Inganta kwanciyar hankali da rage tasirin muhalli sun kasance muhimman fannoni.

Kula da Inganci a Samar da Tantanin Rana na PV

Tantanin silicon crystalline PV sune mafi yawan tantanin rana a cikin hasken rana na kasuwanci, wanda ke da fiye da 90% na tallace-tallace na kasuwar tantanin PV a duniya.

A cikin dakin gwaje-gwaje, ingancin canjin makamashi na tantanin silicon crystalline ya wuce 25% ga tantanin monocrystalline kuma ya kai 20% ko sama da haka ga tantanin polycrystalline. Duk da haka, samfuran hasken rana da aka samar a masana'antu a halin yanzu suna samun inganci 18%–22% a ƙarƙashin yanayin gwaji na yau da kullun.

Tsaftacewa da Tsarin Rubutu

Etching yana cire layin lalacewa na saman kuma yana sanya saman ya zama tsarin da ke kama haske kuma yana rage asarar haske. Auna hasken saman da aka yi shi ne muhimmiyar hanya don lura da tsarin etching.

Samuwar Junction Diffusion da Warewar Gefen

Diffusion thermal da hanyoyi makamantan su suna samar da layin diffusion na wani nau'in conductivity daban akan wafer, suna haifar da pn junction. Nau'ikan tantabara daban-daban suna ajiye layin kariya na wani kauri tsakanin pn junction da wafer don samun ingantaccen tantabara mai haske. Wannan tsari yana lura da rayuwar masu ɗaukar kaya, kaurin wafer, da ma'aunin refractive.

Ajiye Murfin Hana Hasken Rana

Don ƙara inganta sha haske, ana sanya fim ɗin hana haske a saman wafer. A halin yanzu, masana'antu suna amfani da hanyar PECVD don ajiye fim ɗin sirara akan wafer, wanda a lokaci guda yake aiki azaman layin kariya. A wannan mataki, manyan ma'auni sune watsawar fim ɗin hana haske da daidaiton juriyar sheet.

Ƙirƙirar Lantarki

Ana buga layukan grid na lantarki a gaban tantanin hasken rana, yayin da filin baya da kuma lantarkin baya ana buga su a bayan, sannan a bushe da kuma gasa. A wannan tsari, kula da zafin jiki, daidaiton jeri, da kuma girman tsayi da faɗin layukan grid sune alamomin sa ido da ba za a iya rabuwa da su ba.

Ra'ayin Ooitech

ooitech ta yi imani: TOPCon, HJT, da perovskite kowannensu yana tura ingancin tantanin hasken rana gaba ta hanyarsa, kuma tsananin kula da ingancin samarwa shine abin da ke mayar da waɗannan fasahohin zuwa ingantattun kayayyaki masu aiki da kyau.