Gabatarwa

Fasahar hasken rana ta photovoltaic ta ci gaba da sauri a cikin shekaru goma da suka gabata, tare da yawancin gine-ginen cell masu gasa suna tura inganci zuwa sabbin matakai. Wannan labarin yana bayyana ainihin ka'idodin aiki na hasken rana cell, sannan ya rarraba manyan fasahohin zamani guda uku da ke tsara masana'antar a yau, kuma ya rufe da kallon kula da inganci a samar da cell.

Yadda Aikin Hasken Rana PV Cell Yake

Tantanin hasken rana yana canza haske zuwa wutar lantarki, amma ba duk photons masu shigowa suke ba da gudummawa daidai ba. Fahimtar inda ake rasa makamashi shine mataki na farko zuwa gina ingantattun sel.

• Photons masu ƙarfin da bai kai bandgap ba ba a sha su kuma suna wucewa ta cikin tantanin halitta.

• Photons masu ƙarfin da ya wuce bandgap ana sha su kuma suna haifar da nau'i-nau'i na electron-hole, amma ƙarin ƙarfin photons masu ƙarfi yana ɓacewa a matsayin zafi.

• Rarraba caji da jigilar masu ɗaukar kaya da aka samar suna haifar da asara a mahaɗin pn.

• Asarar sake haɗuwa tana faruwa yayin jigilar masu ɗaukar kaya.

• Juriyar tuntuɓar tana haifar da raguwar ƙarfin lantarki, yana haifar da asarar ƙarfin lantarki na tuntuɓar.

Rage Asarar Lantarki

• Zaɓi wafers masu kyakkyawan tsarin crystal da nau'in da ya dace.

• Haɓaka dabarun samar da mahaɗin pn mai kyau.

• Haɓaka dabarun kariya mai kyau.

• Yi amfani da dabarun tuntuɓar ƙarfe masu dacewa.

• Aiwatar da kyawawan fasahohin saman gaba da baya.

Rage Asarar Haske

Don rage asarar haske da haɓaka ingancin tantanin halitta, masana'antar ta haɓaka hanyoyi da fasahohi daban-daban na kama haske. Waɗannan sun haɗa da yin saman wafer ɗin da ba shi da santsi don rage haske mai dawowa, suturar hana haske a gaba, suturar haske a baya, da rage yankin inuwar layin grid.

TOPCon

TOPCon, wanda kuma aka sani da fasahar tuntuɓar da aka rufe, ana ɗaukarsa a matsayin fasahar tantanin halitta ta gaba bayan PERC. Idan aka kwatanta da sauran sabbin fasahohi masu yuwuwa kamar HJT da IBC, TOPCon na iya haɓakawa kai tsaye daga layin PERC ko PERT da ake da su. Sakamakon haka, masana'antun da ke son haɓaka layukan samar da su na buƙatar jari kaɗan, yayin da suke samun ingantaccen haɓaka kusan 1%.

Gaban tantanin halitta TOPCon da gaske yana kama da na al'ada N-type ko N-PERT, wanda ya ƙunshi emitter boron (p+), Layer na rufewa, da Layer na hana haske. Babbar fasaha tana cikin tuntuɓar da aka rufe a baya: bayan wafer ɗin yana ɗauke da siririn Layer oxide (1-2 nm) tare da fim ɗin silicon mai gauraya mai ɗauke da phosphorus. Don aikace-aikacen fuska biyu, ana yin ƙarfe ta hanyar buga grid na Ag ko Ag-Al a gaba da grid na Ag a baya.

Tunnel Oxide Passivated Contact

Tunnel Oxide Passivated Contact (TOPCon) ya ja hankalin mutane sosai a kwanan nan saboda yana samun ingantaccen canjin wutar lantarki na 25.7%. Tsarin TOPCon ya ƙunshi siririn tunnel oxide da phosphorus (P) doped polysilicon contact layer. Za a iya yin P-doped polysilicon layer ta hanyar crystallizing a-Si:H ko kuma ta hanyar sanya polysilicon kai tsaye ta amfani da LPCVD. TOPCon ya zama zaɓi mai ban sha'awa a cikin fasahohin hasken rana masu inganci.

HJT Heterojunction

Fasahar Heterojunction (HJT) wata hanya ce ta kera hasken rana wadda ta kasance tana haɓaka cikin shekaru goma da suka gabata. A halin yanzu, tana ɗaya daga cikin hanyoyin da suka fi dacewa don tura inganci da ƙarfin wutar lantarki zuwa matakan girma, har ma ta wuce aikin fasahar PERC da ta fi yawa a masana'antar. HJT cells suna haɗa fasahohi biyu daban-daban a cikin ɗaya: crystalline silicon da amorphous thin film. Yin amfani da waɗannan fasahohin tare yana samar da ƙarin makamashi fiye da amfani da ɗaya kaɗai, yana kaiwa ga inganci na 25% ko sama.

Tsarin HJT Cell

Ta yin amfani da wafer monocrystalline a matsayin tushe, ana ajiye fim ɗin a-Si:H na 5-10 nm sannan kuma fim ɗin a-Si:H na p-type a jere a gaban wafer da aka tsaftace kuma aka yi texture, yana samar da p-n heterojunction. A bayan wafer, ana ajiye fim ɗin intrinsic na 5-10 nm da fim ɗin a-Si:H na n-type don samar da filin baya. Ana ajiye fim ɗin oxide conductive transparent, sannan a ƙarshe screen printing yana ƙirƙirar na'urorin tattara ƙarfe a saman bangarorin biyu, yana gina tantanin HJT mai symmetrical.

Fa'idodin Tantanan HJT

• Sassauci da daidaitawa — An haɓaka wannan fasaha don kyakkyawan iyawar samarwa ko da a cikin yanayi mai tsanani. HJT panels suna da ƙarancin zafin jiki fiye da panels na yau da kullun, suna tabbatar da babban aiki a yanayin zafi na waje mai girma.

• Tsawon rayuwa da ake tsammani — A matsakaita, thin-film PV modules na iya wuce shekaru 25, yayin da HJT cells na iya ci gaba da aiki na tsawon fiye da shekaru 30.

• Inganci mafi girma — Yawancin allunan heterojunction a kasuwa a yau suna da inganci tsakanin 19.9% da 21.7%, babban ci gaba fiye da sauran sel monocrystalline na al'ada.

• Rage farashi — Silikon amorphous da ake amfani da shi a allunan HJT fasaha ce ta PV mai rahusa. Idan aka kwatanta da sauran fasahohi, wannan hanyar hasken rana mai bakin ciki tana buƙatar lokacin kera gajarta. Godiya ga tsarinta mai sauƙi, HJT ya fi araha fiye da sauran hanyoyin.

Perovskite

A shekara ta 2009, an fara amfani da kayan perovskite don samun ingancin photovoltaic na 4%. A shekara ta 2021, sel hasken rana na perovskite mai haɗaɗɗiya (PSC) sun kai inganci na 25.5%. Saurin ci gaban sel perovskite ya sa su zama tauraro mai tasowa a fagen PV kuma ya haifar da sha'awa sosai a cikin ilimi. Saboda hanyoyin aikin su har yanzu sababbi ne, akwai dama da yawa don ƙarin nazarin ilimin kimiyyar lissafi da sinadarai na perovskite.

Tsarin Sel Perovskite

Mafi yawan tsarin hasken rana na perovskite na ci gaba sun dogara ne akan abubuwa biyar: oxide mai gudanarwa mai haske, Layer na jigilar lantarki (ETL), perovskite, Layer na jigilar rami (HTL), da na'urar lantarki ta ƙarfe. Fahimta da inganta matakan makamashi da hulɗar abubuwa daban-daban a waɗannan wuraren haɗin gwiwa wani yanki ne mai ban sha'awa na bincike wanda har yanzu ana tattaunawa akai.

CaTiO3

Perovskite shine sunan ma'adinai, wanda aka gano a shekara ta 1839 da Rose a cikin duwatsun dutsen Ural kuma aka sanya masa suna bayan masanin ilimin ƙasa na Rasha Perovski. Kayan perovskite suna da ƙarancin yuwuwar sake haɗawa da kuma babban motsi na masu ɗauka, yana sa su zama kayan da suka dace don hasken rana.

Hanyoyin Samar da Fim na Perovskite

Mabuɗin inganta ingancin canjin wutar lantarki na hasken rana na perovskite yana cikin inganta yanayin fim. Hanyoyin samar da fim da ake amfani da su a dakin gwaje-gwaje sune ajiya ta mataki ɗaya ko biyu. Don biyan buƙatun manyan wurare, fim na perovskite mai rahusa, ana kuma amfani da kayan aiki kamar slot-die coating, bugu, da fesa don kera hasken rana na perovskite.

Makomar Perovskite

Bincike na gaba akan perovskite zai fi mayar da hankali kan rage sake haɗuwa ta hanyoyi kamar passivation da rage lahani, da kuma inganta aiki ta hanyar haɗa perovskites masu girma biyu da kayan haɗin gwiwa mafi inganci. Matsakaicin cire caji na iya canzawa daga kayan halitta zuwa kayan inorganic don inganta aiki da kwanciyar hankali. Inganta kwanciyar hankali da rage tasirin muhalli suna ci gaba da zama muhimman fannoni.

Kula da Inganci a Samar da Tantanin Rana na PV

Tantanin siliki na crystalline PV sune mafi yawan tantanin halitta a cikin hasken rana na kasuwanci, wanda ke da fiye da 90% na tallace-tallace na kasuwar tantanin halitta na PV a duniya.

A cikin dakin gwaje-gwaje, ingancin canjin makamashi na tantanin siliki na crystalline ya wuce 25% ga tantanin halitta guda ɗaya kuma ya kai 20% ko sama da haka ga tantanin halitta mai yawa. Duk da haka, samfuran hasken rana da aka samar a masana'antu a halin yanzu suna samun inganci 18%–22% a ƙarƙashin daidaitattun yanayin gwaji.

Tsaftacewa da Tsarin Rubutu

Etching yana cire layin lalacewa na saman kuma yana sanya saman ya zama tsari mai kama da gashi wanda ke kama haske kuma yana rage asarar haske. Auna hasken saman da aka yi masa etching hanya ce mai mahimmanci don lura da tsarin etching.

Samar da Junction Diffusion da Warewa Gefen

Diffusion thermal da hanyoyi makamantan su suna samar da layin diffusion na wani nau'in conductivity daban a kan wafer, suna haifar da pn junction. Nau'ikan tantabohi daban-daban suna sanya layin kariya na wani kauri tsakanin pn junction da wafer don samun ingantaccen tantabohi na bakin ciki. Wannan tsari yana lura da tsawon rayuwar masu ɗaukar kaya, kaurin wafer, da ma'aunin refractive.

Sanya Rufin Hana Hasken Rana

Don ƙara inganta sha haske, ana sanya fim ɗin hana haske a saman wafer. A halin yanzu, masana'antu suna amfani da hanyar PECVD don sanya fim ɗin bakin ciki a kan wafer, wanda a lokaci guda yana aiki azaman layin kariya. A wannan mataki, manyan ma'auni sune watsawar fim ɗin hana haske da daidaiton juriyar saman.

Samar da Electrode

Ana buga layukan grid a gaban tantanin hasken rana ta hanyar allo, yayin da filin baya da kuma na'urar baya ana buga su a baya, sannan a bushe da kuma gasa. A wannan tsari, kula da zafin jiki, daidaiton jeri, da kuma girman tsayin layukan grid zuwa fadinsa sune alamomin sa ido da ba za a iya rabuwa da su ba.

Ra'ayin Ooitech

ooitech ta yi imani: TOPCon, HJT, da perovskite kowannensu yana tura ingancin tantanin hasken rana gaba ta hanyarsa, kuma tsananin kula da ingancin samarwa shine abin da ke mayar da waɗannan fasahohin zuwa ingantattun na'urori masu aiki da kyau.