Sama da 26.3% Inganci, Menene Ya Raga Don Inganta a Bayan? Lambobin Sadarwa na n-Type na Baya Suna Neman Haɗin Bifacial, Yayin da Lambobin Sadarwa na p-Type na Baya Suka Koma zuwa Bac
Teburin Abubuwan Ciki
Sama da inganci 26.3%, Menene Ya Raga Don Inganta a Bayan?
"Lao Zhang, tantanin 26.66% ya yi amfani da cikakken tsarin p-type TOPCon na baya. A cikin takardar 26.34%, an canza gaba zuwa yatsun n-TOPCon na gida, yayin da baya ya zama lamba p-TOPCon na cikakken yanki. Shin tarihin SiOx/poly-Si mai hawa biyu har yanzu iri ɗaya ne?"
Wannan ita ce tambayar da ƙungiyarmu ta tsari ta yi bayan mun gama tattauna tantanin 26.66% jiya.
Tsarin gine-gine na baya mai hawa biyu kusan an kwafa shi daga ƙirar 26.66%, amma gefen p-TOPCon yana gabatar da maɓallan daidaitawa guda uku waɗanda tantanin 26.66% bai taɓa su ba. Dabarar gefen gaba kuma ta bambanta gaba ɗaya. Tana nisantar da emitter boron mai juriya 430 Ω/□ zuwa yatsun n-TOPCon na gida. Waɗannan hanyoyi ne guda biyu daban-daban don rage sake haɗuwa.
Takardar 26.34% ta Gao K. et al. ana iya kallon ta a matsayin nazarin 'yar'uwar baya-baya na aikin 26.66%. Karanta su biyu tare yana ba da hoto mafi haske game da abin da ake buƙata don kusantar inganci 27%.
Gao, K. et al. "Bifacial tunnel oxide passivating contacts for silicon and perovskite/silicon tandem solar cells with improved efficiency." Nature Energy (2026). DOI: 10.1038/s41560-026-02007-8
Lambobi Uku Bayan 26.34% Cell
Ingancin haɗin gwiwa guda ɗaya: 26.34% akan 335.5 cm², tare da Voc na 743.2 mV, FF na 85.0% da Jsc na 41.69 mA/cm².
Ingancin tandem: 32.73%, ta amfani da saman cell perovskite 1.68 eV. Tandem Voc ya kai 1.961 V, yayin da 80% na aikin farko ya rage bayan sa'o'i 2,000 na bin MPP.
Ma'anar tsari: gaban yatsu na n-TOPCon da aka keɓe a cikin shimfidar baya-haɗi, tare da haɗin gwiwa na baya mai cikakken yanki na p-TOPCon mai Layer biyu. Wannan ainihin juyi ne na madubi na TOPCon na al'ada, wanda yawanci yana amfani da gaban boron emitter da lamba ta baya n-TOPCon.
Lambar Baya mai Layer Biyu: Kashi ɗaya, amma Maɓallai uku daban-daban
Lambar baya 26.66% tana amfani da SiOx / n+ poly-Si mai ɗan haske / SiOx / n+ poly-Si mai nauyi, tare da phosphorus a matsayin mai ƙara.
Tuntuɓar baya 26.34% tana amfani da SiOx / p+ poly-Si a 36 nm / SiOx / p+ poly-Si a 90 nm, tare da doping na boron.
Dukansu tsarin suna bin tsari ɗaya na asali: SiOx na ƙasa, poly-Si na ciki, SiOx na tsakiya da poly-Si na waje. Sigar p-TOPCon, duk da haka, dole ne ta magance matsala da ta daɗe.
p-TOPCon koyaushe yana fuskantar ciniki tsakanin passivation da tuntuɓar. Boron na iya haifar da lahani da yawa a mahadar Si/SiO₂ fiye da phosphorus, yayin da ƙarfe na p+ poly-Si ya fi wahala saboda ƙuntatawa na jigilar ramuka da kuma raunin hulɗa tsakanin manna azurfa na al'ada da p+ poly-Si.
| Abu na kwatanta | Tuntuɓar baya 26.66%: cikakken yanki n-TOPCon | Tuntuɓar baya 26.34%: cikakken yanki p-TOPCon |
|---|---|---|
| Polarity na dopant | Phosphorus, n+ | Boron, p+ |
| Kauri na poly-Si na ciki / waje | Kusan 40 / 60 nm | 36 / 90 nm; ƙarin kauri na waje yana ba da ƙarin sarari don yaduwar boron da ƙarfe |
| SiOx Matsakaici | Kusan 1.5 nm, an yi thermal oxidation a 620°C | Kusan 1 nm, an kafa ta hanyar in-situ thermal oxidation a 650°C; ya fi sirara saboda tunnelling rami ya riga ya fi wahala a gefen p+ |
| Annealing | An kiyasta kewayon 880–920°C a cikin binciken da ya gabata | Pre-annealing a 1050°C na fiye da daƙiƙa 30, yana samun 98% crystallinity kuma yana tura implied Voc zuwa 747 mV |
| Manne Azurfa | Manne na al'ada, an haɗa shi da wani Layer na waje don iyakance shigar Ag | Manne da aka gyara da alkali-metal-oxide tare da 4 wt% Na₂O/K₂O da ƙurar azurfa mara kyau, yana rage contact resistivity zuwa 0.55 mΩ·cm² |
| Siffar baya | Gogewar baya ta al'ada | Gogewar baya da aka daidaita saboda p-TOPCon ya fi kula da yanayin saman kuma yana buƙatar ƙananan J₀ |
| Babban manufa | Toshe shigar Ag yayin kiyaye passivation | Toshe shigar Ag, danne lahani na boron da ke da alaƙa da mu'amala da inganta p+ poly-Si metallization |
Bayanan tsarin da aka ruwaito sun haɗa da in-situ rear oxidation a 650°C, matsakaicin 1 nm intermediate SiOx Layer, boron doping na 1 × 10²⁰ cm⁻³, 98% crystallinity bayan 1050°C pre-annealing, implied Voc na 747 mV, da contact resistivity na 0.55 mΩ·cm² ta amfani da alkali-metal-modified paste tare da rough silver powder.
Ɗaya daga cikin bayani yana da sauƙi a rasa. Layer na waje p+ poly-Si yana da kauri 90 nm, 50% fiye da kusan 60 nm na waje da aka yi amfani da shi a gefen n-TOPCon.
Wannan ba ƙaruwa ba ne na son rai. Boron yana da ƙarancin narkewa a cikin poly-Si fiye da phosphorus, don haka sashin da aka yi da yawa yana buƙatar ƙarin kauri don rage contact resistivity. A lokaci guda, matakin 1050°C pre-annealing yana tura boron ciki. Layer na waje mai kauri yana taimakawa hana boron shiga da lalata Layer SiOx na ƙasa.
Wannan akasin dabarar n-TOPCon ne, inda Layer na waje zai iya zama sirara kuma mafi amorphous.
Gaban Gaba: Dabarar 430 Ω/□ An Maye Gurbinsu da Localization
Tambayar da binciken da ya gabata ya bari ita ce ko dabarar 430 Ω/□ high-resistance boron-emitter za ta ci gaba da aiki ga fingered n-TOPCon front contact.
Amsar daga tantanin 26.34% a bayyane take: ba ya yi haka. Zane ya koma kan wani hanya daban.
Kwayar 26.66% tana amfani da na'urar boron-diffused front emitter na al'ada tare da juriyar takarda na 430 Ω/□. Ƙananan yatsun ƙarfe na kusan 10 μm suna rama raunin wutar lantarki.
Kwayar 26.34% tana cire na'urar boron emitter na gaba na al'ada kuma ta maye gurbinsa da yatsun n-TOPCon da aka tsara kusan 210 μm faɗi, yana barin poly-Si kawai a ƙarƙashin wuraren haɗin ƙarfe.
Hanyar rage sake haɗuwa don haka tana canzawa daga rage yawan sinadari ta hanyar juriya mai girma zuwa rage yankin da poly-Si ya rufe.
An fara gyara rubutun. Ana amfani da Ozone da HF don zagaye tukwici na dala. Wannan yana rage rashin kariya da lalacewar manna azurfa a kusa da kololuwar rubutu.
An gabatar da filin zafin jiki mai digiri, ko GTF, a cikin LPCVD. Raman cikakken nisa a rabin iyakar ya kai 8.4 cm⁻¹. Ƙarƙashin ƙima yana nuna ingantaccen crystallinity. Filin zafin jiki mai digiri yana inganta daidaiton zafin jiki a kwance da tsaye kuma yana ɗaga crystallinity na n+ poly-Si.
Phosphorus doping ya kai 3.3 × 10²⁰ cm⁻³. Wannan ya kai kusan sau ɗaya mafi girma fiye da yawan sinadarin phosphorus da aka yi amfani da shi a lambar sadarwa ta baya ta 26.66%. Fingers na gaba n+ an tsara su don gudanarwa maimakon cikakken yanki na passivation. Yawancin aikin passivation yana ɗaukar nauyin ta hanyar cikakken yanki na baya p-TOPCon.
Nisa na finger ya kai kusan 210 μm. Poly-Si yana kasancewa a ƙarƙashin karfe, yayin da yankin da ba a taɓa shi ba na textured ya rage ba a rufe shi. Wannan yana rage yawan shayar da parasitic na gaba idan aka kwatanta da cikakken yanki na poly-Si.
Hanyar 430 Ω/□ ta kasance ta zamanin boron-emitter. A cikin tsarin fingered n-TOPCon, sake haɗuwa ana sarrafa ta rufin poly-Si na gida, siffar saman da aka zagaye da ingantaccen crystallinity daga GTF-LPCVD, maimakon kawai ƙara juriya na takarda.
Wannan yana taimakawa bayyana yadda tantanin halitta 26.34% ya kai Voc na 743.2 mV, kusa da 744.6 mV da aka ruwaito don tantanin halitta 26.66%, yayin da kuma ya sami Jsc mafi girma. Lambar sadarwa ta gaba ta gida tana yanke shayar da parasitic wanda zai rage a cikin cikakken yanki na gaba poly-Si.
Kwatanta Gefen-gefe na Zane-zanen 'Yan'uwa Biyu na 26%
Lambar Sadarwa ta Baya Biyu-Layer SiOx/poly-Si
| Layer ko tsari | 26.66% n-TOPCon baya | 26.34% p-TOPCon baya | Babban dalilin bambancin |
|---|---|---|---|
| SiOx na kasa | Kimanin 1.3–1.6 nm, an kafa shi a cikin O₂ a 620°C | Kimanin 1.8 nm, an kafa shi a wurin a 650°C | Bangaren p yana buƙatar shinge mai ƙarfi don hana shigar boron, kodayake tunnelling rami ya fi wahala |
| poly-Si na ciki | Kimanin 40 nm, an yi masa phosphorus mai sauƙi kuma yana da crystalline sosai | 36 nm, an yi masa boron mai sauƙi | Boron yana da ƙarancin narkewa; wani siririn Layer na ciki zai iya tallafawa passivation |
| SiOx Matsakaici | Kimanin 1.5 nm, an kafa shi a cikin O₂ a 620°C | Kimanin 1 nm, an kafa shi a wurin | Tunnelling yana da buƙata a bangaren p, don haka tsaka-tsakin Layer ba zai yi kauri ba |
| poly-Si na waje | Kimanin 60 nm, an yi masa phosphorus mai yawa kuma galibi amorphous | 90 nm, an yi masa boron mai yawa | p+ poly-Si metallization ya fi wahala, yana buƙatar kauri mai kauri da kuma paste da aka gyara |
| Annealing | Kimanin 880–920°C | 1050°C pre-annealing, yana kaiwa 98% crystallinity | Boron yana buƙatar yanayin zafi mai girma don kunnawa, yayin da tsari kuma dole ne ya sarrafa lahani masu alaƙa da boron |
| Manne Azurfa | Paste na al'ada tare da Layer na waje mara crystallin | 4 wt% alkali-metal oxide tare da foda na azurfa mara kyau | Metallization na p+ poly-Si ya kasance ɗaya daga cikin manyan matsalolin tsari |
Kwatanta Gaban-Gaba
| Abu | 26.66% gaban gefe | 26.34% gaban gefe |
|---|---|---|
| Tsari | Cikakken yanki boron-diffused emitter | Gishirin n-TOPCon na gida kimanin 210 μm fadi |
| Dabarar sarrafa sake haɗuwa | Babban juriyar takardar 430 Ω/□ don rage doping | Rage rufin poly-Si tare da zagaye texture |
| Texture na saman | Texture na al'ada mai jujjuyawar pyramid | Dala mai zagaye da aka yi da Ozone da HF |
| Sanya Poly-Si | Ba ya aiki | GTF-LPCVD tare da Raman FWHM na 8.4 cm⁻¹ |
| Dopant | Boron | Phosphorus a 3.3 × 10²⁰ cm⁻³ |
Abin da Takardun Biyu Suke Fada Game da Ci gaban Rear-Contact Sama da 26%
Sakon da aka haɗa yana da sauki kai tsaye.
A matakin 25%, an mai da hankali kan halayyar pinhole na oxide Layer. A matakin 26%, ci gaban ya koma zuwa tsarin SiOx/poly-Si mai Layer biyu da injiniyan ƙarfe. Sama da 26.3%, hanyoyin sun fara rabuwa: n-TOPCon rear contacts suna neman haɗin wutar lantarki na fuska biyu, yayin da p-TOPCon rear contacts suka koma tsarin back-junction tare da yatsu na gaba a wurare. Na karshen ya riga ya kusa zama wani ɓangare na BC-TOPCon architecture.
Layer SiOx na tsakiya da ake amfani da shi don toshe shigar azurfa wani abu ne da aka raba a cikin ƙirar rear-contact mai Layer biyu. A gefen p-TOPCon, duk da haka, dole ne a warware matsaloli uku:
Ana buƙatar matakin pre-annealing na 1050°C don kunna boron, ƙara crystallinity da kuma magance matsalolin da ke da alaƙa da boron a fuskar sadarwa.
Ana buƙatar manna azurfa da aka gyara da alkali-metal-oxide don magance wahalar ƙarfe na p+ poly-Si.
Gyaran baya da shimfidawa sun zama mahimmanci saboda p-TOPCon ya fi kula da yanayin saman da tasirinsa akan J₀.
Waɗannan batutuwa ba su kasance mahimmanci ga ƙirar 26.66% n-TOPCon ba. A taƙaice, haɗin p-TOPCon mai shafi biyu yana da wuyar ƙira fiye da na n-TOPCon, amma yana iya ba da damar Voc mafi girma da zarar an sarrafa tsarin.
Haɗin p-TOPCon na baya mai shafi biyu a cikin tantanin 26.34% ya kai implied Voc na 747 mV, wanda ya ɗan fi girma fiye da matakin implied Voc da aka kiyasta don ƙirar 26.66%.
Ma'aunin Layin Samarwa Da Za a Iya Aiwatarwa Kai Tsaye
Inganta gogewar baya da shimfidawa. Layin samar da p-TOPCon bai kamata ya ɗauki gogewar baya a matsayin tsari da ke buƙatar “isasshen kyau” kawai ba. Shimfidawa yana da tasiri mai ƙarfi akan J₀ na haɗin p-TOPCon mai shafi biyu fiye da yadda yake akan n-TOPCon.
Ƙirƙirar matakin SiOx na tsakiya a wurin a kusan 1 nm. Kwafin 1.5 nm thermal oxide da aka yi amfani da shi a cikin tsarin 26.66% n-TOPCon na iya rage tunnelling kuma ya cutar da FF a gefen p-type.
Gabatar da matakin pre-annealing na 1050°C. Ba tare da wannan magani ba, boron activation da 98% crystallinity suna da wuya a samu, yana sa implied Voc na 747 mV ba zai yiwu ba.
Yi amfani da alkali-metal-oxide-modified silver paste. Tsarin da aka ruwaito yana amfani da 4 wt% Na₂O/K₂O da rough silver powder. Contact resistivity na 0.55 mΩ·cm² babban manufa ne ga gefen p-TOPCon. Paste na al'ada na iya sa series resistance ta tashi sosai a p+ contact.
Sarrafa faɗin finger na gaba a kusan 210 μm. Dole ne daidaiton laser patterning ya ci gaba da tafiya tare da ƙaramin contact geometry. Rage faɗin finger na iya rage parasitic absorption kuma, amma lalacewar laser ga double-layer stack za a sake kimantawa.
Tambaya ta gaba ga BC-TOPCon
Tsarin 26.34%, tare da front n-TOPCon fingers da full-area double-layer p-TOPCon rear contact, ainihin wani ɓangare ne na BC-TOPCon.
Mataki na gaba da ya dace shi ne a daidaita lambar sadarwa ta baya p-TOPCon, tare da shirya yatsu na baya p-type da yatsu na n-type a cikin tsari mai haɗaka. Wannan zai haifar da ingantaccen tsarin BC-TOPCon.
Wannan yana haifar da sabuwar tambaya. Shin ya kamata matakin SiOx na tsakiya a cikin lambar sadarwa ta baya p-TOPCon ya kasance SiO₂ mai tsabta, ko kuma a maye gurbinsa da SiOx mai ɗauke da nitrogen ta hanyar OGO don ƙarfafa wucewar filin? Wani zaɓi kuma zai iya zama AlOx/SiOx tari, ta amfani da tasirin filin aluminum oxide tare da lambar sadarwa ta SiOx/poly-Si mai hawa biyu.
Binciken 26.34% bai bincika wannan batu ba saboda lambar sadarwa ta baya p-TOPCon ta kasance cikakke kuma bai dogara da wucewar filin da aka daidaita ba. Duk da haka, da zarar lambar sadarwa ta baya p-type ta zama mai yatsu, haɗin wucewar filin AlOx da tsarin SiOx/poly-Si mai hawa biyu na iya zama zaɓi mai mahimmanci na gaba.
Akwai kuma tambaya mai alaƙa da tsarin tandem. Tantanin da aka yi amfani da shi a cikin tandem 32.73% yana da fuskar gaba mai ɗaci. Kwatancen a cikin Hoto 1 ya nuna cewa tsarin finger-TOPCon mai gefe biyu na iya samun ƙarfin tandem fiye da tsarin TOPCon mai cikakken yanki mai gefe biyu.
Amma ta yaya za a sarrafa daidaiton hasken photoluminescence a kan fuskar gaba mai ɗaci tare da yatsun n-TOPCon na gida? Ƙarfin laser mai yawa na iya ƙonewa ko kuma daidaita saman pyramid. Wannan na iya cinye ɓangaren taga aiki da aka ƙirƙira ta hanyar maganin pyramid mai zagaye.
A cikin nazarin guda uku—daga tantanin Das Solar 25.4% zuwa tantanin 26.66% da 26.34%—dabarar tuntuɓar baya ta wuce ta ƙarni uku: sarrafa ramin oxide, kariya mai nau'i biyu daga shigar azurfa, da kuma a ƙarshe haɗin p-TOPCon mai nau'i biyu tare da ƙarfe mai gyara alkali.
Ra'ayin Ooitech
Tagan tafiyar aiki ita ce ainihin matsalar a nan. Da zarar p-TOPCon ta tashi daga cikakken lamba ta baya zuwa ga yankin BC na gida, za a buƙaci inganta juriyar lamba, lalacewar laser, kunna boron da kuma kariyar filin a matsayin tsarin guda ɗaya. Ƙaramin SiOx mai bakin ciki na iya kare FF, amma kuma yana barin ƙaramin tazara game da shigar azurfa da lalacewar boron. Sakamako mai amfani na gaba zai kasance wanda ya nuna wannan cikakkiyar taga haɗin kai akan wafers masu girman samarwa, ba kawai ƙimar inganci mafi girma ba.
