Sama da 26.3% Inganci, Menene Ya Raga Don Inganta a Bayan? Abubuwan Haɗin Bayan n-Type Suna Neman Haɗin Kai Biyu, Yayin da Abubuwan Haɗin Bayan p-Type Suna Tafiya Zuwa Bac
Teburin Abubuwan Ciki
Sama da 26.3% Inganci, Menene Ya Raga Don Inganta a Bayan?
"Lao Zhang, tantanin 26.66% ya yi amfani da cikakken tsarin p-type TOPCon na baya. A cikin takardar 26.34%, an canza gaba zuwa yatsotsin n-TOPCon na gida, yayin da baya ya zama lamba p-TOPCon mai cikakken yanki. Shin tsarin SiOx/poly-Si mai hawa biyu har yanzu iri ɗaya ne?"
Wannan ita ce tambayar da ƙungiyarmu ta tsari ta yi bayan mun gama tattauna tantanin 26.66% jiya.
Tsarin gine-ginen baya mai hawa biyu kusan an kwafa shi daga ƙirar 26.66%, amma gefen p-TOPCon yana gabatar da maɓallan daidaitawa guda uku waɗanda tantanin 26.66% bai taɓa su ba. Dabarar gefen gaba kuma ta bambanta gaba ɗaya. Ta nisanta daga emitter boron mai juriya 430 Ω/□ zuwa yatsotsin n-TOPCon na gida. Waɗannan hanyoyi ne guda biyu daban-daban don rage sake haɗuwa.
Takardar 26.34% ta Gao K. et al. ana iya kallon ta a matsayin binciken 'yar'uwar baya-gaba na aikin 26.66%. Karanta su biyu tare yana ba da hoto mafi haske game da abin da ake buƙata don kusantar ingancin 27%.
Gao, K. et al. "Bifacial tunnel oxide passivating contacts for silicon and perovskite/silicon tandem solar cells with improved efficiency." Nature Energy (2026). DOI: 10.1038/s41560-026-02007-8
Lambobi Uku Bayan 26.34% Cell
Ingancin haɗin gwiwa guda ɗaya: 26.34% akan 335.5 cm², tare da Voc na 743.2 mV, FF na 85.0% da Jsc na 41.69 mA/cm².
Ingancin tandem: 32.73%, ta amfani da saman cell perovskite 1.68 eV. Tandem Voc ya kai 1.961 V, yayin da 80% na aikin farko ya rage bayan sa'o'i 2,000 na bin MPP.
Ma'anar tsari: gaban yatsu na n-TOPCon da aka keɓe a cikin shimfidar haɗin baya, haɗe da lambar baya mai nau'i biyu na p-TOPCon mai cikakken yanki. Wannan ainihin juyi ne na madubi na TOPCon na al'ada, wanda yawanci yana amfani da gaban boron emitter da lambar baya n-TOPCon.
Lambar Baya Mai Nau'i Biyu: Kashi ɗaya, amma Maɓallai Uku Daban-daban
Lambar baya 26.66% tana amfani da SiOx / n+ poly-Si mai ɗan haske / SiOx / n+ poly-Si mai nauyi, tare da phosphorus a matsayin mai ƙara.
Tuntuɓar baya 26.34% tana amfani da SiOx / p+ poly-Si a 36 nm / SiOx / p+ poly-Si a 90 nm, tare da doping boron.
Dukansu tsarin suna bin tsari ɗaya na asali: SiOx na ƙasa, poly-Si na ciki, SiOx na tsakiya da poly-Si na waje. Sigar p-TOPCon, duk da haka, dole ne ta magance wata matsala da ta daɗe.
p-TOPCon koyaushe yana fuskantar ciniki tsakanin passivation da tuntuɓar. Boron na iya haifar da lahani da yawa a mahadar Si/SiO₂ fiye da phosphorus, yayin da ƙarfe na p+ poly-Si ya fi wahala saboda iyakokin jigilar ramuka da ƙarancin hulɗa tsakanin manna azurfa na al'ada da p+ poly-Si.
| Abin kwatanta | Tuntuɓar baya 26.66%: cikakken yanki n-TOPCon | Tuntuɓar baya 26.34%: cikakken yanki p-TOPCon |
|---|---|---|
| Polarity dopant | Phosphorus, n+ | Boron, p+ |
| Kauri poly-Si na ciki / waje | Kimanin 40 / 60 nm | 36 / 90 nm; Layer na waje mai kauri yana ba da ƙarin gefe don yaduwar boron da ƙarfe |
| SiOx Matsakaici | Kusan 1.5 nm, an yi thermal oxidation a 620°C | Kusan 1 nm, an kafa ta hanyar in-situ thermal oxidation a 650°C; ya fi sirara saboda tunnelling na rami ya riga ya fi wahala a gefen p+ |
| Annealing | An kiyasta kewayon 880–920°C a cikin binciken da ya gabata | Pre-annealing a 1050°C na fiye da dakika 30, yana samun 98% crystallinity kuma yana tura implied Voc zuwa 747 mV |
| Manne na Azurfa | Manne na al'ada, an haɗa shi da wani Layer na waje don iyakance shigar Ag | Manne da aka gyara da alkali-metal-oxide tare da 4 wt% Na₂O/K₂O da foda na azurfa mara kyau, yana rage contact resistivity zuwa 0.55 mΩ·cm² |
| Siffar baya | Gogewar baya ta al'ada | Gogewar baya da aka daidaita saboda p-TOPCon ya fi kula da yanayin saman kuma yana buƙatar ƙananan J₀ |
| Babban manufa | Toshe shigar Ag yayin kiyaye passivation | Toshe shigar Ag, danne lahani na boron da ke da alaƙa da mu'amala da inganta p+ poly-Si metallization |
Bayanan tsarin da aka ruwaito sun haɗa da in-situ rear oxidation a 650°C, kusan 1 nm matsakaiciyar SiOx Layer, boron doping na 1 × 10²⁰ cm⁻³, 98% crystallinity bayan 1050°C pre-annealing, implied Voc na 747 mV, da contact resistivity na 0.55 mΩ·cm² ta amfani da alkali-metal-modified paste tare da rough silver powder.
Ɗaya daga cikin bayani yana da sauƙi a rasa. Layer na waje p+ poly-Si yana da kauri 90 nm, wanda ya fi kauri 50% fiye da kusan 60 nm na waje da aka yi amfani da shi a gefen n-TOPCon.
Wannan ba ƙaruwa ba ne na son rai. Boron yana da ƙarancin narkewa a cikin poly-Si fiye da phosphorus, don haka sashin da aka yi masa doping mai yawa yana buƙatar ƙarin kauri don rage contact resistivity. A lokaci guda, matakin 1050°C pre-annealing yana tura boron ciki. Layer na waje mai kauri yana taimakawa hana boron shiga da lalata Layer na SiOx na ƙasa.
Wannan akasin dabarar n-TOPCon ne, inda Layer na waje zai iya zama sirara kuma mafi amorphous.
Gaban Gaba: Dabarar 430 Ω/□ An Maye Gurbinsu da Localization
Tambayar da binciken da ya gabata ya bari ita ce ko dabarar 430 Ω/□ high-resistance boron-emitter za ta ci gaba da aiki ga fingered n-TOPCon front contact.
Amsar daga tantanin 26.34% a bayyane take: ba haka ba. Zane ya koma kan wani hanya daban.
Kwayar 26.66% tana amfani da na'urar boron-diffused front emitter na al'ada tare da juriyar takarda na 430 Ω/□. Ƙananan yatsun ƙarfe na kusan 10 μm suna rama raunin haɗin kai.
Kwayar 26.34% tana cire na'urar boron emitter na gaba na al'ada kuma ta maye gurbinsa da yatsun n-TOPCon da aka tsara kusan 210 μm fadi, yana barin poly-Si kawai a ƙarƙashin wuraren haɗin ƙarfe.
Hanyar rage sake haɗuwa don haka tana canzawa daga rage yawan dopant ta hanyar juriyar takarda mai girma zuwa rage yankin da poly-Si ya rufe.
An fara gyara rubutun. Ana amfani da Ozone da HF don zagaye tukwici na dala. Wannan yana rage rashin kariya da lalacewar azurfa a kusa da manyan tukwici.
An gabatar da filin zafi mai gradient, ko GTF, a cikin LPCVD. Raman cikakken nisa a rabin iyakar ya kai 8.4 cm⁻¹. Ƙarƙashin ƙima yana nuna ingantaccen crystallinity. Filin zafi mai gradient yana inganta daidaiton zafi a kwance da tsaye kuma yana ɗaga crystallinity na n+ poly-Si.
Doping na Phosphorus ya kai 3.3 × 10²⁰ cm⁻³. Wannan ya kai kusan sau ɗaya mafi girma fiye da yawan sinadarin phosphorus da aka yi amfani da shi a lambar sadarwa ta baya ta 26.66%. Fitar n+ na gaba an tsara su ne don gudanar da aiki maimakon cikakken yanki na passivation. Yawancin aikin passivation ana aiwatar da shi ta hanyar lambar sadarwa ta baya ta p-TOPCon.
Nisa na yatsa ya kai kusan 210 μm. Poly-Si yana kasancewa a ƙarƙashin ƙarfe, yayin da yankin da ba a taɓa shi ba ya kasance a buɗe. Wannan yana rage yawan shayar da parasitic a gefen gaba idan aka kwatanta da cikakken yanki na lambar sadarwa ta poly-Si.
Hanyar 430 Ω/□ ta kasance ta zamanin boron-emitter. A cikin tsarin n-TOPCon mai yatsu, ana sarrafa recombination ta hanyar rufin poly-Si na gida, siffar saman da aka zagaye da ingantaccen crystallinity daga GTF-LPCVD, maimakon kawai ƙara juriyar takarda.
Wannan yana taimakawa bayyana yadda tantanin 26.34% ya kai Voc na 743.2 mV, kusa da 744.6 mV da aka ruwaito don tantanin 26.66%, yayin da kuma ya sami Jsc mafi girma. Lambar sadarwa ta gaba ta gida tana yanke shayar da parasitic da zai rage a cikin cikakken tsarin poly-Si na gaba.
Kwatanta Gefen-Gefen na Zane-Zane Biyu na 26% 'Yan'uwa
Lambar Sadarwa ta Baya ta Biyu-Layer SiOx/poly-Si
| Layer ko tsari | 26.66% n-TOPCon baya | 26.34% p-TOPCon baya | Babban dalilin bambancin |
|---|---|---|---|
| SiOx na kasa | Kusan 1.3–1.6 nm, an kafa shi a cikin O₂ a 620°C | Kusan 1.8 nm, an kafa shi a wurin a 650°C | Bangaren p yana buƙatar shinge mai ƙarfi don huda boron, ko da yake tunnelling rami ya fi wuya |
| poly-Si na ciki | Kusan 40 nm, an yi masa phosphorus da haske kuma yana da crystalline sosai | 36 nm, an yi masa boron da haske | Boron yana da ƙarancin narkewa; wani siririn Layer na ciki zai iya tallafawa passivation |
| SiOx Matsakaici | Kusan 1.5 nm, an kafa shi a cikin O₂ a 620°C | Kusan 1 nm, an kafa shi a wurin | Tunnelling yana da buƙata a bangaren p, don haka tsaka-tsakin Layer ba zai yi kauri ba |
| poly-Si na waje | Kusan 60 nm, an yi masa phosphorus sosai kuma galibi amorphous | 90 nm, an yi masa boron sosai | p+ poly-Si metallization ya fi wahala, yana buƙatar kauri mai kauri da kuma paste da aka gyara |
| Annealing | Kusan 880–920°C | 1050°C pre-annealing, yana kaiwa 98% crystallinity | Boron yana buƙatar yanayin zafi mai girma don kunnawa, yayin da tsari kuma dole ne ya sarrafa lahani masu alaƙa da boron |
| Manne na Azurfa | Paste na al'ada tare da waje mai amorphous | 4 wt% alkali-metal oxide tare da foda na azurfa mara kyau | Metallization na p+ poly-Si ya kasance ɗaya daga cikin manyan matsalolin tsari |
Kwatanta Gaban-Gaba
| Abu | 26.66% gaban gefe | 26.34% gaban gefe |
|---|---|---|
| Tsari | Cikakken yanki boron-diffused emitter | Gishirin n-TOPCon na gida kusan 210 μm faɗi |
| Dabarun sarrafa sake haɗuwa | Babban juriyar takardar 430 Ω/□ don rage doping | Rage rufin poly-Si tare da zagaye texture |
| Texture na saman | Texture na al'ada mai jujjuyawar pyramid | Dala masu zagaye da aka yi da Ozone da HF |
| Sanya Poly-Si | Ba ya aiki | GTF-LPCVD tare da Raman FWHM na 8.4 cm⁻¹ |
| Dopant | Boron | Phosphorus a 3.3 × 10²⁰ cm⁻³ |
Abin da Takardun Biyu Suka Fada Game da Ci gaban Rear-Contact Sama da 26%
Sakon da aka haɗa yana da sauki kai tsaye.
A matakin 25%, an mayar da hankali kan halayyar pinhole na Layer oxide. A matakin 26%, ci gaban ya koma zuwa tsarin SiOx/poly-Si mai Layer biyu da injiniyan ƙarfe. Sama da 26.3%, hanyoyin sun fara rabuwa: n-TOPCon rear contacts suna neman haɗin wutar lantarki na bifacial, yayin da p-TOPCon rear contacts ke motsawa zuwa tsarin back-junction tare da yatsu na gaba na gida. Na karshen ya riga ya kusa da tsarin BC-TOPCon na wani bangare.
Layer SiOx na tsakiya da ake amfani da shi don toshe shigar azurfa wani abu ne da aka raba na duka tsarin rear-contact mai Layer biyu. Bangaren p-TOPCon, duk da haka, dole ne ya magance matsaloli uku na ƙari:
Ana buƙatar matakin pre-annealing na 1050°C don kunna boron, ƙara crystallinity da kuma danne matsalolin da ke da alaƙa da boron.
Ana buƙatar manna azurfa da aka gyara da alkali-metal-oxide don magance wahalar ƙarfe na p+ poly-Si.
Goge bayan baya da planarization sun zama mahimmanci saboda p-TOPCon ya fi kula da yanayin saman da tasirinsa akan J₀.
Waɗannan batutuwa ba su kasance mahimmanci ga ƙirar 26.66% n-TOPCon ba. A taƙaice, haɗin p-TOPCon mai Layer biyu yana da wuyar ƙira fiye da na n-TOPCon, amma yana iya ba da damar Voc mafi girma da zarar an sarrafa tsarin.
Haɗin p-TOPCon na baya mai Layer biyu a cikin tantanin 26.34% ya kai ga Voc mai nuni na 747 mV, wanda ya ɗan fi girma fiye da matakin Voc mai nuni da aka kiyasta don ƙirar 26.66%.
Sigogin Layin Samarwa Da Za a Iya Aiwatarwa Kai Tsaye
Inganta goge bayan baya da planarization. Layin samar da p-TOPCon bai kamata ya ɗauki goge bayan baya a matsayin tsari da ke buƙatar “isasshen kyau” kawai ba. Planarization yana da tasiri mai ƙarfi akan J₀ na haɗin p-TOPCon mai Layer biyu fiye da yadda yake akan n-TOPCon.
Ƙirƙiri Layer SiOx na tsakiya a wurin a kusan 1 nm. Kwafin 1.5 nm thermal oxide da aka yi amfani da shi a cikin tsarin 26.66% n-TOPCon na iya rage tunnelling kuma ya cutar da FF a gefen p-type.
Gabatar da matakin pre-annealing na 1050°C. Ba tare da wannan magani ba, boron activation da 98% crystallinity suna da wuya a samu, yana sa implied Voc na 747 mV ba zai yiwu ba.
Yi amfani da alkali-metal-oxide-modified silver paste. Tsarin da aka ruwaito yana amfani da 4 wt% Na₂O/K₂O da rough silver powder. Contact resistivity na 0.55 mΩ·cm² babban manufa ne ga gefen p-TOPCon. Paste na al'ada na iya sa series resistance ta tashi sosai a p+ contact.
Sarrafa faɗin finger na gaba a kusan 210 μm. Dole ne daidaiton laser patterning ya ci gaba da tafiya tare da ƙaramin contact geometry. Rage faɗin finger na iya rage parasitic absorption, amma lalacewar laser ga double-layer stack za a sake tantancewa.
Tambaya ta gaba ga BC-TOPCon
Tsarin 26.34%, tare da n-TOPCon fingers na gaba da cikakken yanki na double-layer p-TOPCon rear contact, ainihin wani ɓangare ne na BC-TOPCon.
Mataki na gaba da ya dace shine a daidaita lambar p-TOPCon ta baya kuma, a shirya yatsu na p-type da n-type a cikin tsari mai haɗaka. Wannan zai haifar da tsarin BC-TOPCon na gaskiya.
Wannan yana tayar da sabuwar tambaya. Shin ya kamata matakin SiOx na tsakiya a cikin lambar p-TOPCon ta baya ya kasance SiO₂ mai tsabta, ko kuma a maye gurbinsa da SiOx mai ɗauke da nitrogen ta hanyar OGO don ƙarfafa wucewar filin? Wani zaɓi kuma zai iya zama AlOx/SiOx tari, ta amfani da tasirin filin aluminum oxide tare da lambar SiOx/poly-Si mai hawa biyu.
Binciken 26.34% bai bincika wannan batu ba saboda lambar p-TOPCon ta baya ta kasance cikakke kuma ba ta dogara da wucewar filin da aka keɓe ba. Duk da haka, da zarar lambar p-type ta baya ta zama mai yatsu, haɗin wucewar filin AlOx da tsarin SiOx/poly-Si mai hawa biyu na iya zama zaɓi mai mahimmanci na gaba.
Akwai kuma tambaya game da tsarin tandem. Tantanin da aka yi amfani da shi a cikin tandem na 32.73% yana da fuskar gaba mai laushi. Simulations a cikin Hoto na 1 sun nuna cewa tsarin finger-TOPCon mai gefe biyu na iya samun yuwuwar tandem mafi girma fiye da tsarin TOPCon mai fuska biyu mai cikakken yanki.
Amma ta yaya za a sarrafa daidaiton hasken photoluminescence a kan fuskar gaba mai laushi tare da yatsun n-TOPCon na gida? Ƙarfin laser mai yawa na iya ƙone ko daidaita saman pyramid a wuri. Wannan na iya cinye wani ɓangare na taga aiki da aka ƙirƙira ta hanyar maganin pyramid mai zagaye.
A cikin nazarin guda uku—daga tantanin Das Solar na 25.4% zuwa tantanin 26.66% da 26.34%—tsarin tuntuɓar baya ya wuce ta tsararraki uku: sarrafa ramin oxide, kariya mai nau'i biyu daga shigar azurfa, da kuma a ƙarshe haɗin p-TOPCon mai nau'i biyu tare da ƙarfe mai gyare-gyaren alkali.
Ra'ayin Ooitech
Tagan tafiyar aiki ita ce ainihin matsalar a nan. Da zarar p-TOPCon ta tashi daga cikakken tuntuɓar baya zuwa ga yatsun BC na gida, juriyar tuntuɓar, lalacewar laser, kunna boron da kuma kariyar filin tasiri za a inganta su a matsayin tsarin haɗe guda ɗaya. Ƙaramin SiOx mai bakin ciki na iya kare FF, amma kuma yana barin ƙaramin tazara daga shigar azurfa da lalacewar boron. Sakamako mai amfani na gaba shine wanda zai nuna wannan cikakkiyar taga haɗin kai akan wafers masu girman samarwa, ba kawai ƙimar inganci mafi girma ba.
