Menene Tantanin Rana na TOPCon? Jagora Cikakke Game da Fasahar Tunnel Oxide Passivated Contact
Teburin Abubuwan Ciki
Gabatarwa ga TOPCon Solar Cells
TOPCon (Tunnel Oxide Passivating Contact) wata fasaha ce ta N-type wafer cell wacce ta fara bayyana a shekarar 2013. TOPCon solar cell wani nau'in tunnel oxide passivated contact solar cell ne wanda aka gina akan N-type substrate.
Idan aka kwatanta da PERC cells, TOPcon cells suna amfani da tunnel oxide layer with excellent charge transport properties a matsayin Layer na jigilar caji a bayan tantanin halitta. A saman wannan, an saka fim ɗin polysilicon mai ɗauke da kusan 20nm don samar da tsarin tuntuɓar da aka rufe a gefen baya. Wannan yana rage haɗuwar saman da haɗuwar tuntuɓar ƙarfe, yana ɗaga ƙarfin buɗe kewayawa, kuma yana inganta ingantaccen canjin makamashi.
TOPCon fasaha ce ta hasken rana mai tuntuɓar oxide mai rufe fuska bisa ka'idar masu ɗaukar kaya, tana samar da ingantaccen tasirin rufewa.
Tantanin halitta na TOPCon yana amfani da N-type substrate. An shirya siririn oxide Layer a bayan tantanin halitta, sannan kuma fim ɗin da aka ɗora. Tare waɗannan biyu suna samar da tsarin tuntuɓar da aka rufe wanda ke rage haɗuwar saman da haɗuwar tuntuɓar ƙarfe, yana ba da damar ƙarin haɓaka ingancin juyawa na N-PERT cells.
Fasahar TOPCon tana adanawa da sake amfani da kayan aiki da hanyoyin samar da sel P-type na al'ada da ake da su gwargwadon iyawa. Tana buƙatar ƙara kayan aikin boron diffusion da thin film deposition kawai, ba tare da buƙatar buɗe baya ko daidaitawa ba. Wannan yana sauƙaƙa tsarin samar da sel sosai kuma yana rage wahalar samar da yawa. Layin tsari yana da babban jituwa kuma yana iya aiki tare da layukan samar da zafi mai zafi da ake amfani da su don sel PERC da N-PERT bifacial.
Sel TOPCon suna da fa'idodin ƙarancin lalacewa, babban bifaciality, da ƙarancin ma'aunin zafin jiki, suna ba da ƙarin samar da wutar lantarki a matakin tashar wutar lantarki.
Matakan Ci gaban Sel TOPCon
Tarihin ci gaban sel TOPCon za a iya raba shi zuwa matakai huɗu: lokacin samfurin fasaha, lokacin shirya samfur, lokacin tallata kasuwanci, da lokacin girma mai fashewa.
Fa'idodin Sel TOPCon
Fa'idodin Aiki
Babban ingancin juyawa. Godiya ga tsarin tuntuɓar da aka keɓance na sel TOPCon, iyakar ingancin ka'idar ya kai har 28.7%. Manyan masana'antun TOPCon sun riga sun sami ingancin samarwa sama da 25.5%, ingantawa mai mahimmanci akan sel PERC na yau da kullun (ingancin juyawa na yanzu kusan 23.5%, iyakar ka'idar 24.5%).
Babban bifaciality. Sel bifacial TOPCon suna samar da kusan 3% ƙarin wutar lantarki a kowace watt fiye da sel bifacial PERC. A cikin yanayin tashar wutar lantarki ta ƙasa ɗaya, wannan yana ba da ƙarin ribar samar da wutar lantarki.
Ƙananan ma'aunin zafin jiki. Ma'aunin zafin jiki na nau'in N-type TOPCon modules yana da ƙasa da -0.30%/℃, wanda ya fi na nau'in P-type modules -0.35%/℃, yana nuna kwanciyar hankali mai kyau a yanayin zafi mai zafi.
Ƙananan lalacewa. Silicon crystalline N-type mai sinadarin Phosphorus yana ƙunshe da ƙarancin boron sosai, don haka babu sake haɗuwar boron-oxygen, yana ba shi fa'ida a cikin ƙimar lalacewa. Wasu TOPCon modules suna nuna lalacewa na shekara ta farko 1% da lalacewa na shekara-shekara 0.4%, idan aka kwatanta da 2% na shekara ta farko da 0.45% na PERC modules, yana kawo ribar samar da wutar lantarki a kowace watt a tsawon rayuwar module.
Ƙarfin aiki mai ƙarfi a cikin ƙarancin haske. TOPCon cells suna amsa da kyau ga gajerun da dogon raƙuman haske, suna kiyaye ƙarfin samar da wutar lantarki a ƙarƙashin yanayin ƙarancin haske kamar safiya, maraice, da yanayin gajimare.
Fa'idodin Tattalin Arziki
Babban jituwa tare da masana'antar PERC, yana rage wahalar haɓaka fasaha. TOPCon na iya fadada daga fasahar PERC, yana buƙatar ƙarin matakai huɗu kawai: shirya boron emitter, girma tunnel oxide layer, ajiya da doping polysilicon, da tsaftacewa bayan diffusion. Wannan yana rage wahalar haɓakawa kuma yana hanzarta amfani da fasahar TOPCon.
Canjin layi mai santsi tare da ƙarancin farashin saka hannun jari na kayan aiki. Gina sabon layin TOPCon yana buƙatar saka hannun jari na kayan aiki kusan miliyan 200-250, yayin da sabon layin HJT yana buƙatar miliyan 350-400. Saboda TOPCon yana da daidaiton kayan aiki mai kyau tare da layukan PERC da ke akwai, kawai ana buƙatar ƙara kayan aikin boron diffusion da polysilicon/amorphous silicon deposition (LPCVD / PECVD / PVD), tare da saka hannun jari na kayan aiki kusan miliyan 50-70. Wannan yana guje wa babban saka hannun jari a sabbin kayan aiki da manyan gyare-gyaren layi, yana mai da shi mai tattalin arziki sosai.
Babban yuwuwar ƙarin farashi. Idan aka kwatanta da na'urorin PERC, na'urorin TOPCon suna ba da ƙarin wutar lantarki a kowace watt, ƙarin ribar samarwa, da ƙananan farashin tsarin, suna haifar da babban wuri don ƙarin farashi.
Tsarin Samar da Tantanin TOPCon
Idan aka kwatanta da tsarin monocrystalline PERC, tsarin samar da tantanin TOPCon yana ƙara matakai 2 zuwa 3: sanya tunnel oxide Layer (ultra-thin SiO2, 1-2nm), sanya intrinsic polysilicon passivation Layer (60-100nm), da kuma phosphorus implantation.
Babban Matakan Tsari da Ayyukansu
1. Tsaftacewa da Rubutu
Manufa: Bayan yankan wafer, gefuna sun lalace, tsarin crystal lattice ya karye, kuma sake haɗuwa da saman yana da tsanani. Tsaftacewa da rubutu da farko suna nufin cire lalacewar saman da kuma samar da tsarin kama haske mai siffar pyramid a saman. Hasken yana haskaka sau da yawa a saman wafer, yana rage haske.
2. Boron Diffusion
Manufa: Babban aikin shine samar da haɗin PN. Saboda boron yana da ƙarancin narkewa a cikin silicon, ana buƙatar yanayin zafi mai girma da lokaci mai tsawo don yaduwa. Zaɓin tushen yaduwa kuma yana shafar samarwa: chlorides suna da lalacewa, yayin da bromides suke da ɗanɗano, yana sa tsaftacewa ta zama mai wahala kuma yana ƙara farashin kulawa.
Yawanci ana kammala boron diffusion a yanayin zafi mafi girma - sama da 1000℃ - kuma idan aka kwatanta da zagayowar minti 102 da ake buƙata don phosphorus diffusion, zagayowar boron diffusion yana ɗaukar minti 150.
Ka'ida:
HCl da H2O na gas da ake samarwa ta hanyar halayen da ke cikin bututun tanderun ana ɗaukar su ta N2 kuma ana rarraba su daidai a cikin bututun. H2O kuma tana amsawa da BBr3 da O2 don samar da B2O3, wanda kuma yana amsawa don samar da HBO2 na gas; a yanayin zafi mai girma HBO2 yana rushewa zuwa B2O3, yana ba da damar B2O3 ya rarraba daidai a saman tantanin hasken rana. Bugu da ƙari, H2O tana amsawa da B2O3 da aka ajiye a cikin bututun tanderun, yana hana tarin B2O3 a bangon bututun watsawa, yana ƙara rayuwar kayan quartz, da kuma ƙara tushen boron mai tasiri. HCl kuma na iya amsawa da ƙazantattun ƙarfe a saman tantanin da kuma cikin bututun don samar da chlorides na ƙarfe na gas waɗanda ke fita tare da iskar gas, yana hana ƙazantattun ƙarfe shiga cikin tantanin hasken rana yayin aikin zafi mai girma.
3. SE Laser Doping
Manufa: Don samar da mai watsawa mai zaɓe. Ana amfani da doping mai yawa a wuraren da ke kusa da wuraren tuntuɓar tsakanin layukan grid na ƙarfe da wafer don rage juriyar tuntuɓar tsakanin lantarkin gaba na ƙarfe da wafer, yayin da doping mai ƙarancin yawa a waje da wuraren lantarki yana rage sake haɗuwa a cikin layin watsawa. Inganta mai watsawa yana ƙara yawan fitarwa da ƙarfin lantarki na tantanin hasken rana, don haka inganta ingancin canjin hasken lantarki.
Inda laser ɗin yake a cikin kwararar TOPCon: PERC SE yana amfani da doping na phosphorus, yayin da TOPCon SE ke amfani da doping na boron. Saboda boron da phosphorus suna da ma'auni daban-daban na rarrabuwa, phosphorus yana watsawa cikin sauƙi daga silicon dioxide zuwa silicon, yayin da boron ke da wuyar shiga kuma yana buƙatar ƙarin kuzari. Duk da haka, yawan kuzarin laser yana lalata wafer cikin sauƙi, yana sa doping na boron ya zama ƙalubale. Idan aka kwatanta da boron diffusion na gargajiya, ƙara fasahar SE a cikin sel TOPCon na iya inganta aiki da 0.5%, kuma a ainihin samarwa na iya samun karuwar aiki da 0.2-0.4%.
4. Etching
Manufa: Babban aikin etching shine cire BSG da junction na baya. Tsarin diffusion yana samar da yadudduka na diffusion a saman wafer da gefunansa; yadudduka na diffusion na gefe yana haifar da gajeren kewayawa cikin sauƙi, kuma yadudduka na diffusion na saman yana shafar passivation na gaba, don haka dole ne a cire su duka. A halin yanzu, etching ana yin shi ne ta hanyoyin rigar, ana cire yadudduka na baya da gefe a cikin na'urori masu sarkar kafin a sarrafa gaban.
5. Shirya Layer na Tunnel Oxide da Layer na Polysilicon
Manufa: Ajiye Layer oxide tunnel na 1-2nm a baya, sannan ajiye Layer polysilicon na 60-100nm don samar da tsarin passivation. Akwai hanyoyi da yawa don shirya Layer passivation na TOPCon, musamman hanyoyin LPCVD, PECVD, da PVD. LPCVD shine babban abin da ake amfani da shi a yanzu, amma wrap-around deposition yana da tsanani, yayin da PECVD ke da karfin gaske a cikin aikin gaba daya.
6. Shirya Fim ɗin Anti-Reflection na Baya
Manufa: Shirya fim ɗin passivation anti-reflection a bayan tantanin halitta don ƙara ɗaukar haske. A lokaci guda, atom ɗin hydrogen da aka samar yayin aiwatar da fim ɗin SiNx suna passivate wafer.
7. Ajiye Aluminum Oxide na Gaba
Manufa: Ajiye Layer fim ɗin aluminum oxide a gaban wafer, wanda tare da wasu finai ke samar da tasirin passivation na gaba.
8. Shirya Fim ɗin Anti-Reflection na Gaba
Manufa: Fim ɗin anti-reflection na gaba yana aiki daidai da na baya. Bugu da ƙari, fim ɗin aluminum oxide da aka ajiye a gaba yana da sirara sosai kuma yana iya lalacewa cikin sauƙi yayin kera tantanin halitta da module na gaba, don haka SiNx na gaba yana kare aluminum oxide.
9. Buga allo - Canja wurin Tsarin Laser
A halin yanzu, yawancin bugu na tantanin halitta har yanzu suna amfani da bugu na allo. A nan gaba, game da rage amfani da man azurfa ga tantanin halitta na N-type, Pattern Transfer Printing na iya samun fa'ida. Laser transfer sabuwar fasaha ce ta bugu mara lamba: ana shafa man da ake buƙata a kan wani takamaiman abu mai sassauƙa mai haske, kuma babban katako na Laser yana yin sikanin tsari mai sauri don canja wurin man daga abu mai sassauƙa mai haske zuwa saman tantanin halitta, yana samar da layukan grid da shirya na'urorin gaba da baya.
10. Sintering
Ana samar da kyakkyawar hulɗar ohmic ta hanyar sintering mai zafi.
11. Rarraba ta atomatik
Ana rarraba tantanin halitta zuwa kwantena bisa ga bambancin ingancin su.
Hanyoyin Ci gaban TOPCon Cells a Nan gaba
A cikin 2023, matsakaicin ingancin juyawa na N-type TOPCon cells ya kai 25.0%, kuma matsakaicin ingancin juyawa na heterojunction cells ya kai 25.2%, duka sun nuna ci gaba mai mahimmanci akan 2022.
A cikin 2023, sabbin layukan samar da yawa da aka fara aiki sun kasance galibi layukan tantanin halitta na N-type. Yayin da ƙarfin tantanin halitta na N-type ke fitowa a hankali, kasuwar tantanin halitta ta PERC ta ragu zuwa 73.0%. Tantanin halitta na N-type sun kai jimillar kusan 26.5%, inda tantanin halitta na N-type TOPCon ya kai kusan 23.0%, tantanin halitta na heterojunction kusan 2.6%, da tantanin halitta na XBC kusan 0.9%—dukkan haɓaka mai yawa akan 2022.
Daga 2024 zuwa gaba, rabon tantanin halitta na N-type da TOPCon ke wakilta zai wuce gaba ɗaya na P-type PERC, tare da masana'antar tsammanin rabon zai kai ya wuce 70%.
Ra'ayin Ooitech
Ooitech ta yi imani: TOPCon, fasahar tantanin halitta mai wucewa ta oxide passivated contact na N-type wanda ke gina kan layukan PERC da ake da su, yana ba da inganci mafi girma, ƙarancin lalacewa, da ƙarfin samar da wutar lantarki, kuma yanzu ya zama babban jigon masana'antar hasken rana.
