Me yasa Metallization ke Sanya Iyakar Ingantacciyar Tantanin Rana Mai Girma

Me yasa Metallization ke Sanya Iyakar Ingantacciyar Tantanin Rana Mai Girma

A cikin babban labarin fasahar photovoltaic, kowane ƙaramin ci gaba a ingancin juyawa yawanci yana zuwa daga tura iyakokin jiki na microscopic da ƙarfi. Tun da masana'antar ta wuce zamanin monocrystalline PERC kuma ta fara karkata zuwa fasahohin N-type kamar TOPCon, HJT, da BC, iyakar inganci ta ci gaba da tashi.

Yayin da selolin hasken rana ke matsowa kusa da iyakar Shockley–Queisser, ɗaya daga cikin matsaloli mafi sauƙi amma mafi wahala a kimiyyar semiconductor yana ƙara zama mahimmanci: haɗin wutar lantarki tsakanin ƙarfe da semiconductor. Wannan mu'amala ta zama babbar matsala ta fasaha da ke shafar yawan samarwa da ingancin sel na ƙarshe.

Ga wanda ba ƙwararre ba, selolin hasken rana na iya zama kamar ɗan guntun semiconductor wanda kawai ke samar da wutar lantarki a ƙarƙashin hasken rana. Daga mahangar masana'antu da ilimi, duk da haka, na'urar ce mai matuƙar inganci ta canza makamashi ta hanyar injiniyan ƙididdiga. Dole ne ta raba nau'ikan electron-hole da aka samar ta hanyar photons da aka ɗauka kuma ta jagorance su zuwa waje da ƙarancin asara.

A wannan tsari, na'urorin lantarki na ƙarfe suna aiki kamar tashoshin biyan kuɗi inda masu ɗaukar caji ke barin duniyar semiconductor mai ƙanƙanta. Idan babban shinge ya kasance a tashar, masu ɗaukar caji suna cunkushe, suna sake haɗuwa, kuma suna rasa makamashi. A matakin na'urar, wannan yana bayyana a matsayin haɓakar juriyar haɗi, faɗuwar ma'aunin cikawa, kuma a ƙarshe rage ƙarfin fitowar selolin hasken rana.

Ƙarfin samar da haɗin ohmic mai ƙarancin juriya a saman da kuma dole ne ya kiyaye ƙarancin sake haɗuwa ya zama muhimmin layin rabuwa ga selolin hasken rana masu inganci na zamani.

Haɗin Ohmic: Haɗa Tazarar Jiki Tsakanin Karfe da Semiconductor

Don fahimtar matsalar ƙarfe, da farko muna buƙatar komawa ga ka'idar band na semiconductor. Wannan ya haɗa da filin lantarki da ke cikin semiconductor da kuma canja wurin caji na ƙananan abubuwa da ke faruwa lokacin da karfe ya haɗu da semiconductor.

Tushen jiki na canza hasken rana shine haɗin PN. Lokacin da semiconductors na P-type da N-type masu nau'ikan doping daban-daban suka haɗu, matakan Fermi su sun bambanta. Don isa ga daidaiton thermodynamic, canja wurin caji na ƙananan abubuwa yana faruwa.

Matsayin Fermi na semiconductor N-type ya fi na semiconductor P-type girma. Don haka electrons suna motsawa da kansu daga yankin N-type zuwa yankin P-type, yayin da ramuka ke motsawa a gaba. Yayin da waɗannan masu ɗauka ke motsawa, ions masu caji na tsaye suna barin kusa da mahadar PN-junction. Wannan yana haifar da yanki na sarari-caji, wanda kuma ake kira yanki na raguwa, tare da filin lantarki na ciki.

Filin da aka gina yana lanƙwasa maƙallan makamashi na semiconductor kuma yana samar da ƙarfin turawa wanda ya saba da alkiblar yaduwar mai ɗauka. Lokacin da yaduwa da turawa suka kai ga daidaito mai ƙarfi, matakan Fermi a ɓangarorin biyu suna daidaita kuma babban halin yanzu ya zama sifili. A ƙarƙashin haske, nau'ikan ramukan lantarki da aka samar da haske suna rabuwa ta wannan filin da aka gina, suna samar da photovoltage da halin yanzu.

Wannan tsari mai laushi na jiki yana aiki da kyau kawai idan masu ɗauka za su iya barin semiconductor su shiga cikin na'urorin ƙarfe ba tare da fuskantar wani babban cikas ba.

Schottky Barriers: Babban Bango a Hanyar Halin Yanzu

Lokacin da na'urar ƙarfe mai tattara halin yanzu ta haɗu da jiki da semiconductor, bambance-bambance a cikin aikin aiki yana haifar da canja wurin caji da lanƙwasa band a wurin haɗin gwiwa.

Yi la'akari da ƙarfe da ke hulɗa da semiconductor nau'in N. Idan aikin ƙarfe ya fi aikin semiconductor girma, electrons a saman semiconductor suna motsawa zuwa ƙarfe. Wani Layer na raguwa tare da ƙananan masu ɗauka yana samuwa kusa da saman semiconductor. Maƙallan makamashi suna lanƙwasa sama, suna haifar da shingen makamashi na haɗin gwiwa wanda aka sani da shingen Schottky.

Shingen Schottky yana da tasirin gyara mai bayyanawa, kamar gudanar da hanya ɗaya na diode. Don ketare shi, masu ɗaukar kaya a cikin semiconductor suna buƙatar isasshen ƙarfin zafi don wuce shingen ta hanyar fitar da thermionic.

Idan wani haɗin Schottky na yau da kullun ya samu tsakanin lantarki da silicon substrate na tantanin rana mai aiki, masu ɗaukar hoto suna fuskantar juriya mai ƙarfi yayin da suke motsawa zuwa ƙarfe. Shingen ba wai kawai yana hana kwararar wutar lantarki ba. Yana kuma sa masu ɗaukar kaya su taru su sake haɗuwa a wurin haɗin gwiwa, kai tsaye yana rage ingancin juyawa.

Haɗin ohmic shine akasin haka. Haɗin lantarki ne mara gyara tsakanin ƙarfe da semiconductor, tare da ƙananan juriya. A cikin yanayin da ya dace, wutar lantarki ta ratsa ta wurin haɗin gwiwa a layi daya a dukkan bangarorin biyu, tare da raguwar ƙarfin lantarki da asarar makamashi.

A ka'ida, zaɓin ƙarfe mai ƙarancin aiki don semiconductor nau'in N, ko kuma babban aiki don semiconductor nau'in P, na iya taimakawa wajen guje wa shingen Schottky. Fuskokin silicon na gaske sun fi rikitarwa. Dangling bonds da ke haifar da ƙarewar lattice da yawan yanayin haɗin gwiwa na iya haifar da ƙarfin Fermi-level pinning. Canza aikin ƙarfe kadai ba ya isa don ƙirƙirar haɗin ohmic cikakke.

Babban maganin masana'antu shine haɗa nauyi mai yawa tare da tunneling na ƙididdiga. Ana samar da wani Layer na N++ ko P++ mai yawan doping a wurin da semiconductor ke tuntuɓar ƙarfe. Wannan yana rage yankin raguwa a saman sosai. Da zarar shingen ya zama siriri sosai, masu ɗaukar kaya ba sa buƙatar wucewa ta kansa. Suna iya tunneling kai tsaye ta cikinsa da babban yiwuwa. Wannan shine tasirin tunneling na ƙididdiga.

Lokacin da Juriya ta Tuntuɓi Ta Tashi, Fill Factor Ta Faɗi

Da zarar tushen jiki na tuntuɓar ohmic ya bayyana, tambaya ta gaba ita ce me yasa masana'antar hasken rana ke da hankali ga lahani na tuntuɓar microscopic. Amsar ta ƙunshi ma'auni uku na lantarki masu mahimmanci: juriya ta tuntuɓi, juriya ta jeri, da fill factor.

Tantanin hasken rana ba shine tushen halin yanzu mai kyau ba. Ya ƙunshi hanyoyin asarar juriya da yawa waɗanda ba za a iya gujewa ba, waɗanda aka haɗa su gaba ɗaya a matsayin juriya ta jeri. Juriya ta jeri ta haɗa da juriya ta jiki na silikon wafer, juriya ta emitter sheet, juriya ta tuntuɓi a wuraren da ƙarfe da semiconductor ke haɗuwa, juriya ta ohmic na yatsu da busbars, da juriya ta jiki na ribbons da sauran kayan haɗi.

Yayin da girma na silicon monocrystalline ya girma, pastes na azurfa masu gudanarwa sun inganta, kuma raga na buga allo sun zama mafi kyau, juriya na wafer da juriya na grid na ƙarfe an rage su zuwa matakan da ba su da yawa. A cikin sel masu inganci na N-type na yanzu, ɗaya daga cikin mafi wuyar matsalolin microscopic shine juriya ta hulɗa tsakanin lantarki na ƙarfe da tsarin hulɗa na tushen silicon.

Idan ba a kafa hulɗar ohmic da ke mamaye da quantum tunneling ba, juriya ta hulɗa na iya tashi sosai kuma ta zama tushen asarar juriya ta jerin.

Fill factor yana ɗaya daga cikin mahimman sigogi da ake amfani da su don kimanta fitarwa na hasken rana da asarar makamashi na ciki. Shi ne rabon mafi girman ƙarfin fitarwa zuwa samfurin ƙarfin buɗe kewayawa da gajeren kewayawar halin yanzu. A kan I-V curve, yana nuna yadda curve yake da murabba'i ko cikawa.

Lokacin da rashin hulɗa mai kyau ya sa hulɗar ohmic ta gaza, haɓakar juriya ta hulɗa tana tura jimlar juriya ta jerin sama sosai. I-V curve sai ya karkata kuma ya rushe a kusa da mafi girman ma'anar ƙarfi. Cell na iya nuna ƙarfin buɗe kewayawa da gajeren kewayawar halin yanzu na al'ada, amma mafi girman ƙarfin da ake samu ga kewayen waje na iya raguwa sosai.

Tsarin fasaha yana da sauki:

• Mummunar haɗin ƙarfe-semiconductor yana hana haɗin ohmic mai kyau.

• Haɗin da ya gaza yana sa juriyar haɗin interfacial ta tashi.

• Juriya ta haɗin tana ƙara juriyar jerin tantanin halitta gabaɗaya.

• Babban juriyar jerin yana rage ma'aunin cikawa.

• Ƙananan ma'aunin cikawa yana jawo ingancin juyawa ƙasa da ƙofar karɓa na samarwa da yawa.

Passivation da Haɗi: Rikicin Cikin Gida na Kwayoyin Rana na Zamani

Zane na tantanin halitta mai inganci na zamani yana fuskantar rikici na zahiri tsakanin passivation da haɗin lantarki. Don samun babban ƙarfin buɗe kewayawa, injiniyoyi suna buƙatar fina-finan dielectric waɗanda ke kare saman silicon gaba ɗaya.

Passivation tana aiki ta hanyoyi biyu. Passivation na sinadarai tana amfani da abubuwa kamar hydrogen don cika igiyoyin da suka rataya a lahani na lattice a cikin silicon crystalline, rage sake haɗuwa da taimakon lahani. Passivation na tasirin filin yana haifar da ƙarfin lantarki mai ƙarfi a mahadar. Tunkudewar electrostatic tana kiyaye ƙananan masu ɗauka masu kama da caji daga saman, yanke wata muhimmiyar hanyar sake haɗuwa ta saman.

A gefen baya na P-type na tantanin halitta PERC, alal misali, fim ɗin aluminum oxide mai ɗauke da babban adadin cajin mara kyau na iya haifar da lanƙwasa band mai ƙarfi kuma ya ba da kariya ta sinadarai da kuma tasirin filin. Duk da haka wannan fim ɗin dielectric mai inganci mai kariya ya zama cikas ga fitar da wutar lantarki.

Don tattara masu ɗaukar hoto, na'urorin lantarki na ƙarfe har yanzu suna buƙatar hanyar lantarki zuwa tushen silicon. Aikin PERC na al'ada yana amfani da lasers don ƙona ƙananan buɗe ido a cikin layin kariya na baya don aluminum ko manna azurfa su iya tuntuɓar silicon. Haɗin kai tsaye na ƙarfe-silicon, duk da haka, yana haifar da haɗuwa mai tsanani a kan iyaka. Waɗannan wuraren tuntuɓar na iya zama kamar magudanar haɗuwa.

A zamanin N-type, inda ci gaban tantanin halitta ke matsowa kusa da iyakar ingancin ka'idar 29.43% da aka ambata don silicon crystalline, asarar haɗuwa daga buɗe ido na gida ya zama da wuya a karɓa. Don haka dole ne fasahohin TOPCon, HJT, da BC su magance wannan matsala ta tsakiya: yadda ake samun juriya kaɗan, jigilar masu ɗaukar nauyi mai faɗi ba tare da lalata kariyar saman ba.

TOPCon: Tunnel Oxide da Aikin Microscopic na LECO

Ƙarfin buƙatar hasken rana ya hanzarta maye gurbin P-type PERC da fasahar N-type. Bisa ga alkaluman masana'antar da aka ambata a nan, N-type TOPCon ya riƙe kusan kashi 23% na kasuwar sel a 2023. Rabonsa ya tashi zuwa fiye da kashi 60% a 2024, yayin da wasu bayanan kayan aiki daga manyan masana'antun suka nuna rabon N-type ya kai kashi 71.1%.

TOPCon yana riƙe da babban matakin dacewa da layukan samar da PERC da ke akwai. Haɓakawa gabaɗaya yana buƙatar ƙarin matakai huɗu na asali. Kudin kayan aikin da aka ambata yana kusan RMB 50-70 miliyan a kowace GW, idan aka kwatanta da kusan RMB 350-400 miliyan a kowace GW don sabon layin HJT. TOPCon kuma yana ba da fa'idodin aiki a bayyane akan PERC. Iyakar ingancinsa na ka'ida an ruwaito kusan 28.7%, yayin da ingancin samar da yawan jama'a ya wuce 26.5% kuma ingancin dakin gwaje-gwaje ya wuce 27.5%.

Mabuɗin aikin TOPCon shine tsarin haɗin kai na baya. Ana shuka wani siririn siliki oxide a kan N-type silicon substrate, tare da kauri da aka sarrafa sosai a kusan nanometer 1-2. Sannan ana ajiye wani polysilicon na asali mai kimanin nanometer 60-100 kuma ana yin phosphorus mai yawa ta hanyar zafin jiki mai girma.

Daga mahangar ilimin kimiyyar band, siririn siliki oxide Layer yana cika dangling bonds a saman wafer ta hanyar sinadarai. Polysilicon mai yawan doping yana haifar da lankwasawa mai ƙarfi kusa da mu'amala. Wannan tsari yana haifar da babban shinge ga masu ɗaukar kaya marasa rinjaye, waɗanda a wannan yanayin su ne ramuka, da ƙaramin shinge mai tasiri ga masu ɗaukar kaya masu rinjaye, waɗanda su ne electrons. Saboda oxide yana da siriri sosai, electrons na iya tunnel ta cikinsa zuwa cikin polysilicon Layer, yayin da ramuka ke toshewa. Sakamakon shine jigilar zaɓin mai ɗaukar kaya.

Tattaunawar ilimi game da jigilar kaya ta cikin oxide ta haɗa da duka tunnel na quantum kai tsaye da kuma samfurin pinhole. Lokacin da kaurin tunnel-oxide ya wuce kimanin nanometer 2, yuwuwar tunnel tana faɗuwa da yawa. Jigilar mai ɗaukar kaya na iya dogara sosai kan lahani na microscopic ko pinholes da aka ƙirƙira yayin annealing mai zafi. Ƙananan pinholes na iya ɗaga juriyar tuntuɓar. Yawan pinholes na iya nuna lalacewar fim mai yawa kuma ya raunana passivation na sinadarai.

Ko da tare da tuntuɓar baya mai karewa da kuma zaɓaɓɓen emitter a gaba, TOPCon na fuskantar babban rikici yayin harbin ƙarfe. Tantanin yana buƙatar harbi mai zafi sosai don man azurfa ya samar da tuntuɓar juriya kaɗan da polysilicon. Idan harbi ya yi tsanani, ƙananan lu'ulu'u na azurfa na iya shiga cikin tunnel oxide mai tsawon nanometer 1-2 kuma su kai ga substrate na silicon crystalline. Tsarin kariya zai iya rushewa, duhu na yanzu zai iya ƙaruwa, kuma ƙarfin buɗe kewayawa zai iya faɗuwa da sauri. Idan zafin harbi ya yi ƙasa da yawa, man azurfa na iya kasa haɗawa da polysilicon yadda ya kamata. Juriya ta tuntuɓar sai ta yi yawa kuma fill factor zai iya rushewa.

Laser Enhanced Contact Optimization, ko LECO, an gabatar da shi don magance wannan taga harbi. Tsarin farko yana amfani da wani nau'in man azurfa na musamman wanda ba ya lalata sosai. Harbi na al'ada yana ba da damar electrode ya shiga cikin silicon nitride Layer ba tare da lalata tunnel oxide mai bakin ciki a ƙarƙashinsa ba. Bayan harbi, fuskar tantanin tana fuskantar hasken laser mai ƙarfi na wani zaɓaɓɓen tsawon igiyar ruwa yayin da ake amfani da wutar lantarki a kan electrodes.

Ta hanyar tasirin photoconductive, filin lantarki na gida yana haifar da gajeriyar, mai ƙarfi mai ƙarfi na microscopic a kan haɗin ƙarfe-semiconductor. Wannan bugun jini yana kama da walƙiya na microscopic. Yana karya shingen shiga tsakani na gida kuma yana haifar da narkewar electrothermal da wuraren gudanarwa na gida. Ana samar da hanyoyi masu yawa na ƙananan halin yanzu.

Bayan maganin LECO, juriyar haɗin kai na macroscopic na iya faɗuwa da yawa kuma an kafa haɗin ohmic mafi inganci. Rushewar gajere ne kuma an keɓe shi. Yana inganta jigilar halin yanzu yayin da yake kiyaye mafi yawan tsarin rufin tunnel-oxide.

HJT: Haɗin kai mai laushi tsakanin Low-Temperature Silver Paste da TCO

Idan TOPCon yana tafiya a kan igiya a babban zafin jiki, fasahar heterojunction tana aiki a ƙarƙashin ƙayyadaddun ƙananan zafin jiki. HJT an fara gabatar da shi ta Sanyo na Japan a ƙarshen 1980s. Yana amfani da siraran siraran siliki na hydrogenated amorphous a kan dukkan saman N-type crystalline silicon wafer don rufe fuska biyu. Sannan ana ajiye nau'ikan P-type da N-type amorphous silicon don samar da heterojunctions. Iyakar ingancinsa na ka'ida an kiyasta kusan 28.5%, yana mai da shi ɗayan manyan gine-ginen tantanin halitta na dogon lokaci.

Ƙarfin wucewar HJT ya samo asali ne daga fina-finan silicon amorphous na asali. Silicon amorphous yana ƙunshe da yawancin haɗin Si-H masu alaƙa da hydrogen. Hydrogen na iya cika igiyoyin da ke rataye a saman silicon crystalline kuma ya ba da ƙarfin wucewar sinadarai. Waɗannan haɗin kuma suna da rauni. Da zarar yanayin zafi na gaba ya wuce kusan 200-250°C, hydrogen na iya tserewa daga fim ɗin silicon amorphous. Wannan dehydrogenation yana lalata tasirin wucewar sinadarai.

Ƙuntataccen zafin jiki yana da tasiri mai mahimmanci akan ƙarfe na HJT. Ba za a iya amfani da manna azurfa mai zafi na al'ada da ake amfani da shi don PERC da TOPCon ba, wanda yawanci yana buƙatar harbi sama da 800°C. HJT yana buƙatar tsarin manna azurfa mai ƙarancin zafi na musamman.

Maimakon dogaro da amsawar gilashin-frit mai zafi, manna mai ƙarancin zafi yana amfani da resin polymer na halitta a matsayin mai ɗaure ga barbashi azurfa masu gudanarwa. Bayan buga allo, tantanin halitta yana shiga cikin tanda mai warkarwa da ke aiki ƙasa da kusan 200°C kuma yana zama a can na ɗan lokaci mai tsawo na warkarwa mai ƙarancin zafi.

Magance matsalar zafin jiki yana haifar da wata matsala: gudanar da wutar lantarki. Silicon maras tsari yana ba da kariya mai kyau, amma gudanar da shi a gefe yana da rauni. Bayan masu ɗaukar kaya sun wuce ta heterojunction, ba za su iya tafiya mai nisa a saman silicon maras tsari don isa ga yatsun ƙarfe ba.

Don haka ana sanya wani fim na oxide mai gudanarwa a bayyane a saman silicon maras tsari mai ƙara, yawanci ta hanyar magnetron sputtering. ITO zaɓi ne na kowa. Fim ɗin TCO yana watsa haske, yana ba da ƙarancin juriya na tuntuɓar, kuma yana gudanar da masu ɗaukar kaya a gefe zuwa layukan grid.

A cikin tarin HJT, tuntuɓar ƙarfe ta ƙarshe tana faruwa tsakanin man azurfa mai ƙarancin zafin jiki da aka warke da fim ɗin TCO. Wannan yana gabatar da ƙalubale biyu na juriya a jere.

Na farko, manna mai ƙarancin zafin jiki ya dogara da raguwar resin polymer yayin warkewa. Raguwar tana matse ƙwayoyin azurfa tare da juna kuma a kan saman TCO. Wannan tuntuɓar jiki tsakanin ƙwayoyin tana da juriya mafi girma fiye da haɗin ƙarfe da ake samarwa ta hanyar harba zafin jiki mai girma.

Na biyu, aikin TCO dole ne ya dace da duka doped amorphous silicon da ke ƙasa da kuma na'urar lantarki da ke sama. Ɗan iskar oxygen ko kuma Fermi-level pinning na iya haifar da ƙaramin shingen Schottky a mahadar TCO-azurfa. Wannan shingen yana ƙara juriya na jerin kuma yana rage fill factor.

Masu samar da paste suna amsawa ta hanyar inganta siffar azurfa, rarraba girman barbashi, da tsarin resin na halitta. Masana'antar HJT kuma tana binciken electroplating na jan ƙarfe mara azurfa don wuce gona da iri na farashi da iyakokin sadarwa na azurfa paste mai ƙarancin zafin jiki. Electroplating na iya haɓaka layukan grid na jan ƙarfe mai tsafta kai tsaye akan TCO ko akan wani Layer na iri, yana haifar da sadarwa mai ƙarancin juriya wanda ya fi kusa da yanayin da ake so.

BC: Rawar Micrometer-Scale na Rear Electrodes

A cikin kewayon gine-ginen hasken rana, fasahar tuntuɓar baya tana da ban sha'awa sosai amma tana da wahalar ƙira. BC ba wani abu ne na musamman ba. Ra'ayi ne na gine-gine, tare da interdigitated back-contact cell, ko IBC, a matsayin ainihin siffarsa.

Ko yana amfani da wafer na P-type, tsarin tuntuɓar tushen TOPCon, ko tsarin HJT, ainihin ƙa'idar ɗaya ce: emitter, filin baya-surface, da duk layukan grid na ƙarfe masu inganci da marasa inganci an matsar da su zuwa bayan tantanin halitta.

Cire duk na'urorin lantarki daga saman da aka haskaka yana haifar da fa'idar gani bayyananne: babu inuwar ƙarfe ta gaba. Ba tare da yatsu ko busbars da ke toshe hasken shiga ba, ƙarin photons na iya shiga cikin tantanin halitta. Idan aka kwatanta da sel masu fuska biyu na al'ada, yawan gajeren kewaye na tantanin halitta BC na iya ƙaruwa da kusan 7%.

A matakin kera da rufe module, sel BC na iya maye gurbin hanyar haɗin gaba-zuwa-baya mai siffar Z ta al'ada tare da haɗin gefen baya mai lebur. Wannan yana rage damuwa na inji tsakanin saman gaba da baya kuma yana iya inganta juriya ga ƙananan tsagewa. Misali, an ba da rahoton cewa damuwar gefen sel HPBC na LONGi ta yi ƙasa da 48% fiye da na sel marasa BC na al'ada, yana tallafawa ingantaccen dogaro na dogon lokaci.

Dole ne a biya ribar haske ta gaba ta hanyar ƙirar lantarki mai rikitarwa ta baya. A kan ƙarancin saman baya, yankunan emitter na P-type da yankunan filin baya na N-type an shirya su cikin yatsu masu musanya. Dole ne a kafa na'urorin lantarki daban-daban tare da daidaito mai girma. Karfe mai inganci dole ne ya haifar da lambar ohmic tare da yankin P-type mai nauyi, yayin da karfe mara kyau dole ne ya tuntuɓi yankin N-type mai nauyi.

Matsalolin injiniya guda uku sun fito fili.

Na farko, saboda saman gaba baya tattara wutar lantarki, duk masu ɗaukar hoto da aka samar dole ne su bi ta kaurin wafer sannan su yi tafiya a gefe a cikin girma uku zuwa wurin da ya dace na baya. Idan tazarar tsakanin na'urorin lantarki masu kyau da marasa kyau na baya ta yi yawa, hanyoyin jigilar kaya suna daɗe. Yiwuwar sake haɗuwa ta ƙaru kuma juriya ta gefe ta ƙaru.

Na biyu, rage nisan jigilar kaya na gefe yana buƙatar na'urorin lantarki masu kyau da marasa kyau da ke kusa sosai. Buɗe Laser tare da buga allo, ko abin rufe fuska da ƙarfe na hoto, dole ne a daidaita su da daidaiton micrometer. Ɗan zubar da manna ko karkacewar buɗe Laser na 'yan micrometers kaɗan na iya haɗa karfen P-side da N-side kai tsaye, yana haifar da shunting mai tsanani.

Na uku, duk lambobin sadarwa masu kyau da marasa kyau suna tattara a cikin yankuna na gida a saman baya. Jimlar yankin sadarwa na ƙarfe-semiconductor mai inganci na iya zama ƙarami fiye da na tantanin halitta na al'ada da ke amfani da lambobin sadarwa a bangarorin biyu. Yayin da halin yanzu da aka samar da haske ya haɗu zuwa waɗannan wuraren sadarwa na gida, yawan halin yanzu ya zama babba sosai. Ko da ƙaramin lahani na sadarwa na iya haɓaka zuwa babban asarar juriya da zafi.

Ƙarshen Wasan: Daga Kamun Hasken Gani zuwa Gudanar da Mai ɗauka

Hankalin masana'antu kan sadarwar ohmic da juriyar sadarwa yana nuna canji mai zurfi a ci gaban hasken rana. fifiko yana motsawa daga kamun photon na macroscopic zuwa daidaitaccen sarrafa motsin mai ɗauka na microscopic.

A cikin shekaru goma da PERC ta mamaye, yawancin bincike ya mayar da hankali kan ƙara haske na baya da kuma inganta kariya da kayan kamar aluminum oxide. A zamanin N-type, ci gaban kimiyyar kayan aiki ya tura kariyar sinadarai ta saman kusa da iyakarta na aiki. Mafi raunin hanyar sadarwa ya motsa. Zaɓin cire mai ɗauka da jigilar kayan aiki yanzu suna taka rawa sosai wajen tantance aikin ƙarshe.

Kamfanoni da dandamali na fasaha waɗanda ke magance juriyar haɗin ƙarfe da ƙarfe yadda ya kamata na iya gina fa'ida mai ma'ana ta inganci da farashi ta hanyar ƙananan juriyar jerin da mafi girman ma'aunin cikawa.

Faɗaɗa kasuwar TOPCon cikin sauri a 2024 ba wai kawai ta hanyar dacewa da layukan PERC da ke akwai ba. Masu kera kayan aiki da masu samar da manna suma sun inganta hanyoyin haɗin gwiwa na laser kamar LECO, ta amfani da tasirin lantarki da zafi na gida don daidaita kariyar tunnel-oxide da samar da haɗin gami mai ƙarancin juriya.

Idan muka dubi gaba, tsadar azurfa mai yawa da iyakokin juriya na jiki na manna azurfa mai ƙarancin zafi suna sa rage azurfa da rufin jan ƙarfe su zama mahimmanci. Girman jan ƙarfe na electrochemical akan fim mai ɗaukar wuta ko Layer iri na iya haifar da haɗin ohmic kusan-metallurgical yayin da kuma rage juriyar lantarki na grid ɗin kanta.

Yaƙin Ƙarshe a Ma'aunin Micrometer-Scale Interface

Tantanin hasken rana suna da matukar damuwa ga rashin kyakkyawar haɗi saboda mahaɗin lantarki shine mataki na ƙarshe kuma mafi wahala a cikin zagayowar canza makamashin photovoltaic.

TOPCon yana daidaita yanayin ƙonewa tare da amincin oxide na rami mai tsawon nanometer 1-2 kawai, tare da LECO yana aiki azaman ingantaccen tsari na tuntuɓar gida. HJT dole ne ya samar da ingantacciyar haɗi tsakanin manna mai ɗaukar zafi da oxide mai ɗaukar haske yayin da yake kasancewa ƙasa da ƙayyadaddun iyakar zafi na 200°C. Kwayoyin BC suna sanya duka polarity a saman baya kuma suna buƙatar ƙirar micrometer wanda ke kasancewa kawai ɗan kuskuren daidaitawa daga shunting.

Waɗannan manyan ayyukan masana'antu suna nuna manufar semiconductor ɗaya: danne shingen Schottky, kafa ingantaccen tuntuɓar ohmic, da rage juriyar tuntuɓar kusa da sifili gwargwadon yiwuwa.

Yayin da fasahar tantanin siliki na crystalline ke ci gaba da tunkarar iyakar ka'idar 29.43%, ƙa'ida ɗaya tana da wuyar mantawa: sarrafa mahadar tuntuɓar, kuma kuna sarrafa iyakar inganci.

Ra'ayin Ooitech

Babban kalubalen samarwa ba shine kawai buga layukan grid masu kunkuntar ko ƙara wani Layer na kariya ba. Metallization dole ne a inganta shi a matsayin wani ɓangare na cikakken tsarin tantanin halitta da module, saboda ƙaramin canji a cikin juriyar tuntuɓar zai iya shafar fill factor, halayen zafi, daidaiton soldering, da ƙarfin module na ƙarshe. Yayin da TOPCon, HJT, da BC ke ci gaba, sarrafa tsarin tuntuɓar da ingantaccen binciken lantarki zai zama mahimmanci kamar yadda ake nuna ingancin tantanin halitta.