Me yasa Metallization ke Saita Matsakaicin Inganci ga Tantanin Rana Mai Girma

A cikin babban labarin fasahar photovoltaic, kowane ƙaramin ci gaba a cikin ingancin juyawa yawanci yana zuwa daga tura iyakokin ƙananan abubuwa na zahiri kaɗan. Tun da masana'antar ta wuce zamanin monocrystalline PERC kuma ta fara matsawa zuwa fasahohin N-type kamar TOPCon, HJT, da BC, iyakar inganci ta ci gaba da tashi.

Yayin da kwayoyin hasken rana ke matsawa kusa da iyakar Shockley–Queisser, daya daga cikin matsaloli mafi mahimmanci amma mafi wuya a kimiyyar semiconductor ya zama mai mahimmanci: haɗin wutar lantarki tsakanin karfe da semiconductor. Wannan mu'amala ta zama babbar matsala ta fasaha da ke shafar yawan samarwa da ingancin tantanin hasken rana na karshe.

Ga wanda ba kwararre ba, tantanin hasken rana na iya zama kamar siririn wafer semiconductor wanda kawai ke samar da wutar lantarki a karkashin hasken rana. Daga mahangar masana'antu da ilimi, duk da haka, shine na'urar canza makamashi ta quantum-mechanical mai matukar daidaito. Dole ne ya raba nau'i-nau'i na electron-hole da aka samar ta hanyar photons da aka sha kuma ya jagorance su zuwa waje da kewayawa tare da asara kadan gwargwado.

A wannan tsari, na'urorin lantarki na karfe suna aiki kamar tashoshin biyan kudi inda masu ɗaukar caji ke barin duniyar semiconductor mai kankanin. Idan akwai babban shinge a tashar, masu ɗaukar caji suna cunkushe, suna sake haduwa, kuma suna rasa makamashi. A matakin na'urar, wannan yana bayyana a matsayin karuwa mai kaifi a juriyar haɗi, raguwa mai tsauri a cikin fill factor, kuma a karshe rage karfin fitarwa na tantanin hasken rana.

Ikon samar da haɗin ohmic mai ƙarancin juriya a saman da kuma dole ne ya kiyaye ƙarancin sake haduwa ya zama muhimmin layi na rabuwa ga kwayoyin hasken rana na zamani masu inganci.

Tuntuɓar Ohmic: Haɗa Ramin Jiki Tsakanin Karfe da Semiconductor

Don fahimtar matsalar ƙarfe, da farko muna buƙatar komawa ga ka'idar band na semiconductor. Wannan ya haɗa da filin lantarki da ke cikin semiconductor da kuma canja wurin caji na ƙananan abubuwa da ke faruwa lokacin da karfe ya haɗu da semiconductor.

Tushen jiki na canza hasken rana shine haɗin PN. Lokacin da semiconductors na P-type da N-type masu nau'ikan doping daban-daban suka haɗu, matakan Fermi su sun bambanta. Don isa ga daidaiton thermodynamic, canja wurin caji na ƙananan abubuwa yana faruwa.

Matsayin Fermi na semiconductor N-type ya fi na P-type girma. Saboda haka, electrons suna motsawa da kansu daga yankin N-type zuwa yankin P-type, yayin da ramuka ke motsawa a gaba. Yayin da waɗannan masu ɗaukar kaya ke motsawa, ions masu caji da aka gyara suna barin kusa da haɗin PN-junction. Wannan yana haifar da yanki na sarari-caji, wanda kuma ake kira yanki na raguwa, tare da filin lantarki da aka gina a ciki.

Filin da aka gina yana lanƙwasa maƙallan makamashi na semiconductor kuma yana samar da ƙarfin tuƙi wanda yake gaba da alkiblar yaduwar mai ɗauka. Lokacin da yaduwa da tuƙi suka kai ga daidaito mai ƙarfi, matakan Fermi a ɓangarorin biyu suna daidaita kuma babban halin yanzu ya zama sifili. A ƙarƙashin haske, nau'ikan electron-hole da aka samar da haske suna rabuwa ta wannan filin da aka gina, suna samar da photovoltage da halin yanzu na fitarwa.

Wannan tsari mai laushi na jiki yana aiki da inganci kawai idan masu ɗauka za su iya barin semiconductor su shiga cikin na'urorin ƙarfe ba tare da fuskantar wani babban cikas ba.

Schottky Barriers: Babban Bango a Hanyar Halin Yanzu

Lokacin da na'urar ƙarfe mai tattara halin yanzu ta zo cikin hulɗa ta jiki da semiconductor, bambance-bambance a cikin aikin aiki yana haifar da canja wurin caji da lanƙwasa band a mahadar.

Yi la'akari da ƙarfe a cikin hulɗa da semiconductor na N-type. Idan aikin ƙarfe ya fi aikin semiconductor girma, electrons a saman semiconductor suna motsawa zuwa ƙarfe. Wani Layer na raguwa tare da ƙananan masu ɗauka yana samuwa kusa da saman semiconductor. Maƙallan makamashi suna lanƙwasa sama, suna haifar da shingen makamashi na mahadar da aka sani da Schottky barrier.

Shingen Schottky yana da tasirin gyara mai bayyanawa, kamar gudanar da hanya ɗaya na diode. Don ketare shi, masu ɗaukar kaya a cikin semiconductor suna buƙatar isasshen makamashin zafi don wucewa kan shingen ta hanyar fitar da thermionic.

Idan wani haɗin Schottky na yau da kullun ya samu tsakanin lantarki da silicon substrate na tantanin rana mai aiki, masu ɗaukar hoto suna fuskantar juriya mai ƙarfi yayin da suke motsawa zuwa ƙarfe. Shingen ba wai kawai yana hana kwararar wutar lantarki ba. Yana kuma sa masu ɗaukar kaya su taru su sake haɗuwa a wurin haɗin gwiwa, kai tsaye yana rage ingancin juyawa.

Haɗin ohmic shine akasin haka. Haɗin lantarki ne mara gyara tsakanin ƙarfe da semiconductor, tare da ƙarancin juriya. A yanayin da ya dace, wutar lantarki tana wucewa ta wurin haɗin gwiwa a layi daya a dukkan bangarorin biyu, tare da raguwar ƙarfin lantarki da asarar makamashi kaɗan.

A ka'ida, zaɓin ƙarfe mai ƙarancin aiki don semiconductor nau'in N, ko kuma babban aikin aiki don semiconductor nau'in P, na iya taimakawa wajen guje wa shingen Schottky. Fuskokin silicon na gaske sun fi rikitarwa. Dangling bonds da ke haifar da ƙarewar lattice da yawan yanayin haɗin gwiwa na iya haifar da ƙarfi mai ƙarfi na Fermi-level pinning. Canza aikin ƙarfe kadai ba ya isa don ƙirƙirar haɗin ohmic cikakke.

Babban maganin masana'antu shine haɗa nauyi mai yawa tare da tunneling na ƙididdiga. Ana samar da wani Layer na N++ ko P++ mai yawan doping a wurin da semiconductor ke tuntuɓar ƙarfe. Wannan yana rage yankin raguwa sosai a saman. Da zarar shingen ya zama siriri sosai, masu ɗaukar kaya ba sa buƙatar wucewa ta kansa. Suna iya tunneling kai tsaye ta cikinsa da yuwuwa mai girma. Wannan shine tasirin tunneling na ƙididdiga.

Lokacin da Juriya ta Tuntuɓi Ta Tashi, Fill Factor Ya Faɗi

Da zarar tushen jiki na tuntuɓar ohmic ya bayyana, tambaya ta gaba ita ce me yasa masana'antar hasken rana ke da hankali ga lahani na tuntuɓar microscopic. Amsar ta ƙunshi ma'auni uku na lantarki: juriya ta tuntuɓi, juriya ta jeri, da fill factor.

Tantanin hasken rana ba shine tushen halin yanzu mai kyau ba. Yana ƙunshe da hanyoyin asarar juriya da yawa waɗanda ba za a iya gujewa ba, waɗanda aka haɗa su gaba ɗaya a matsayin juriya ta jeri. Juriya ta jeri ta haɗa da juriya ta jiki na siliki wafer, juriya ta emitter sheet, juriya ta tuntuɓi a wuraren haɗin ƙarfe-semiconductor, juriya ta ohmic na yatsu da busbars, da juriya ta jiki na ribbons da sauran kayan haɗi.

Yayin da girma na silicon monocrystalline ya girma, pastes na azurfa masu gudanarwa sun inganta, kuma raga na buga allo sun zama mafi kyau, juriya na wafer da juriya na grid na ƙarfe an rage su zuwa matakan da ba su da yawa. A cikin sel masu inganci na N-type na yanzu, ɗaya daga cikin mafi wuyar matsalolin microscopic shine juriya ta hulɗa tsakanin lantarki na ƙarfe da tsarin hulɗa na tushen silicon.

Idan ba a kafa hulɗar ohmic da ke mamaye da quantum-tunneling ba, juriya ta hulɗa na iya tashi sosai kuma ta zama tushen asarar juriya ta jerin.

Factor fill yana ɗaya daga cikin mahimman sigogi da ake amfani da su don kimanta fitarwar hasken rana da asarar makamashi na ciki. Shi ne rabon mafi girman ƙarfin fitarwa zuwa samfurin ƙarfin buɗe kewayawa da gajeren kewayawa na yanzu. A kan I-V curve, yana nuna yadda curve yake da murabba'i ko cikawa.

Lokacin da rashin hulɗa mai kyau ya sa hulɗar ohmic ta gaza, haɓakar juriya ta hulɗa tana tura jimlar juriya ta jerin sama sosai. I-V curve sai ya karkata kuma ya rushe a kusa da mafi girman ma'anar ƙarfi. Cell na iya nuna ƙarfin buɗe kewayawa da gajeren kewayawa na yanzu na al'ada, amma mafi girman ƙarfin da ake samu ga kewayen waje na iya raguwa sosai.

Tsarin fasaha yana da sauki:

• Mummunar haɗin ƙarfe-semiconductor yana hana haɗin ohmic mai kyau.

• Haɗin da ya gaza yana sa juriyar haɗin gwiwa ta tashi.

• Juriya ta haɗin gwiwa tana ƙara juriyar jerin tantanin halitta gabaɗaya.

• Babban juriyar jerin yana rage ma'aunin cikawa.

• Ƙananan ma'aunin cikawa yana jawo ingancin juyawa ƙasa da ƙofar karɓa na samarwa da yawa.

Passivation da Haɗi: Rikicin Cikin Gida na Tantanin Rana na Zamani

Zane-zanen tantanin halitta mai inganci na zamani yana fuskantar rikici na zahiri tsakanin passivation da haɗin lantarki. Don samun babban ƙarfin buɗe kewayawa, injiniyoyi suna buƙatar fina-finai na dielectric waɗanda ke kare saman silicon gaba ɗaya.

Passivation tana aiki ta hanyoyi biyu. Passivation na sinadarai yana amfani da abubuwa kamar hydrogen don cika igiyoyin da ke rataye a lahani na lattice a cikin silicon crystalline, yana rage sake haɗuwa da lahani. Passivation na tasirin filin yana haifar da ƙarfin lantarki mai ƙarfi a wurin haɗin gwiwa. Tunkudewar electrostatic tana kiyaye masu ƙaramin masu kama da caji daga saman, yana yanke wata muhimmiyar hanyar sake haɗuwa ta saman.

A gefen baya na P-type na tantanin halitta PERC, alal misali, fim ɗin aluminum oxide mai ɗauke da babban adadin cajin korau na iya haifar da lanƙwasa band mai ƙarfi kuma ya ba da kariya ta sinadarai da kuma tasirin filin. Duk da haka wannan fim ɗin dielectric mai inganci mai kariya ya zama cikas ga fitar da wutar lantarki.

Don tattara masu ɗaukar hoto, na'urorin lantarki na ƙarfe har yanzu suna buƙatar hanyar lantarki zuwa gindin silicon. Aikin PERC na al'ada yana amfani da lasers don ƙona ƙananan buɗe ido a cikin rufin baya don aluminum ko manna azurfa su iya tuntuɓar silicon. Haɗin kai tsaye na ƙarfe-silicon, duk da haka, yana haifar da sake haɗuwa mai ƙarfi a tsakanin fuska. Waɗannan wuraren tuntuɓar na iya zama kamar magudanar sake haɗuwa.

A zamanin N-type, inda ci gaban tantanin halitta ke matsowa kusa da iyakar ingancin ka'idar 29.43% da aka ambata don silicon crystalline, asarar sake haɗuwa daga buɗe ido na tuntuɓar gida ya zama da wuya a karɓa. Don haka dole ne fasahohin TOPCon, HJT, da BC su magance wannan matsala ta tsakiya: yadda za a sami jigilar kaya mai ƙarancin juriya, babban yanki ba tare da lalata kariyar saman ba.

TOPCon: Tunnel Oxide da Aikin Microscopic na LECO

Ƙarfin buƙatar hasken rana ya hanzarta maye gurbin P-type PERC da fasahar N-type. Bisa ga alkaluman masana'antar da aka ambata a nan, N-type TOPCon ya riƙe kusan kashi 23% na kasuwar sel a 2023. Rabonsa ya tashi zuwa fiye da kashi 60% a 2024, yayin da wasu bayanan kayan aiki daga manyan masana'antun suka nuna rabon N-type ya kai kashi 71.1%.

TOPCon yana riƙe da babban matakin dacewa da layukan samar da PERC da ke akwai. Haɓakawa gabaɗaya yana buƙatar ƙarin matakai huɗu na asali. Kudin kayan aikin da aka ambata yana kusan RMB 50-70 miliyan a kowace GW, idan aka kwatanta da kusan RMB 350-400 miliyan a kowace GW don sabon layin HJT. TOPCon kuma yana ba da fa'idodin aiki a bayyane akan PERC. Iyakar ingancinsa na ka'ida an ruwaito kusan 28.7%, yayin da ingancin samar da yawanci ya wuce 26.5% kuma ingancin dakin gwaje-gwaje ya wuce 27.5%.

Mabuɗin aikin TOPCon shine tsarin haɗin kai na baya. Ana shuka wani siririn siliki oxide a kan N-type silicon substrate, tare da sarrafa kauri sosai a kusan nanometer 1-2. Sannan ana ajiye wani polysilicon na asali mai kimanin nanometer 60-100 kuma ana yi masa phosphorus mai yawa ta hanyar zafin jiki mai girma.

Daga mahangar ilimin kimiyyar band, siririn siliki oxide Layer yana cika dangling bonds a saman wafer ta hanyar sinadarai. Polysilicon mai yawan doping yana haifar da lankwasawa mai karfi kusa da mahadar. Wannan tsari yana haifar da babban shinge ga masu dauke da kananan kuzari, wadanda suke ramuka a wannan yanayin, da kuma shinge mai karami mai tasiri ga masu dauke da yawancin kuzari, wadanda suke electrons. Saboda oxide yana da siriri sosai, electrons na iya tunnel ta cikinsa zuwa polysilicon Layer, yayin da ramuka ke toshewa. Sakamakon shi ne jigilar zaɓaɓɓen masu dauke da kuzari.

Tattaunawar ilimi game da jigilar ta cikin oxide ta hada da kai tsaye quantum tunneling da kuma samfurin pinhole. Lokacin da kaurin tunnel-oxide ya wuce kimanin nanometer 2, yiwuwar tunneling tana raguwa sosai. Jigilar masu dauke da kuzari na iya dogara sosai kan lahani na microscopic ko pinholes da aka kirkira yayin annealing mai zafi. Kadan pinholes na iya tayar da juriyar tuntuɓar. Da yawa na iya nuna lalacewar fim mai yawa da kuma raunana sinadaran passivation.

Ko da tare da tuntuɓar baya mai wucewa da kuma zaɓaɓɓen emitter a gaba, TOPCon na fuskantar babban rikici yayin harbin ƙarfe. Tantanin yana buƙatar harbi mai zafi don man azurfa ya samar da tuntuɓar juriya kaɗan da polysilicon. Idan harbi ya yi tsanani, ƙananan lu'ulu'u na azurfa na iya shiga cikin tunnel oxide mai tsawon nanometer 1-2 kuma su kai ga substrate na silicon crystalline. Tsarin wucewa na iya rushewa, duhu na yanzu na iya ƙaruwa, kuma ƙarfin buɗe kewayawa na iya faɗuwa da sauri. Idan zafin harbi ya yi ƙasa da yawa, man azurfa na iya kasa haɗawa da polysilicon yadda ya kamata. Juriya ta tuntuɓar sai ta yi yawa kuma fill factor na iya rushewa.

Laser Enhanced Contact Optimization, ko LECO, an gabatar da shi don magance wannan taga harbi. Tsarin farko yana amfani da wani nau'in man azurfa na musamman wanda ba shi da lalata. Harbi na al'ada yana ba da damar electrode ya shiga cikin silicon nitride Layer ba tare da lalata tunnel oxide mai bakin ciki a ƙarƙashinsa ba. Bayan harbi, fuskar tantanin tana fuskantar hasken laser mai ƙarfi na wani zaɓaɓɓen tsawon igiyar ruwa yayin da ake amfani da ƙarfin lantarki a kan electrodes.

Ta hanyar tasirin photoconductive, filin lantarki na gida yana haifar da gajeriyar, mai ƙarfi mai ƙarfi na microscopic a mahadar ƙarfe-semiconductor. Wannan bugun jini yana kama da walƙiya mai ƙarami. Yana karya shingen shiga tsakani na gida kuma yana haifar da narkewar electrothermal da wuraren gudanarwa masu ƙarfi sosai. Ana samar da hanyoyin ƙananan halin yanzu da yawa.

Bayan maganin LECO, juriyar tuntuɓar macroscopic na iya faɗuwa da yawa kuma an kafa ingantacciyar hanyar sadarwa ta ohmic. Rushewar gajere ne kuma an keɓe shi. Yana inganta jigilar halin yanzu yayin da yake kiyaye mafi yawan tsarin rufin tunnel-oxide.

HJT: Haɗin kai mai laushi tsakanin Low-Temperature Silver Paste da TCO

Idan TOPCon yana tafiya a kan igiya a babban zafin jiki, fasahar heterojunction tana aiki a ƙarƙashin ƙayyadaddun ƙayyadaddun ƙananan zafin jiki. HJT an fara gabatar da shi ta Sanyo na Japan a ƙarshen 1980s. Yana amfani da siraran siraran amorphous silicon na ciki a saman saman biyu na N-type crystalline silicon wafer don rufe fuska biyu. Sannan ana ajiye nau'ikan P-type da N-type amorphous silicon don samar da heterojunctions. Iyakar ingancinsa na ka'ida an kiyasta kusan 28.5%, yana mai da shi ɗayan manyan gine-ginen tantanin halitta na dogon lokaci.

Ƙarfin wucewar HJT ya samo asali ne daga fina-finan silicon amorphous na asali. Silicon amorphous yana ƙunshe da yawancin haɗin Si-H masu alaƙa da hydrogen. Hydrogen na iya cika igiyoyin da ke rataye a saman silicon crystalline kuma ya ba da ƙarfin wucewar sinadarai. Waɗannan haɗin kuma suna da rauni. Da zarar yanayin zafi na gaba ya wuce kusan 200-250°C, hydrogen na iya tserewa daga fim ɗin silicon amorphous. Wannan dehydrogenation yana lalata tasirin wucewar sinadarai.

Ƙuntataccen zafin jiki yana da tasiri mai mahimmanci akan ƙarfe na HJT. Ba za a iya amfani da manna azurfa mai zafi na al'ada da ake amfani da shi don PERC da TOPCon ba, wanda yawanci yana buƙatar harbi sama da 800°C. HJT yana buƙatar tsarin manna azurfa mai ƙarancin zafi na musamman.

Maimakon dogaro da amsawar gilashin-frit mai zafi, manna mai ƙarancin zafi yana amfani da resin polymer na halitta a matsayin mai ɗaure ga barbashi azurfa masu gudanarwa. Bayan buga allo, tantanin halitta yana shiga cikin tanda mai warkewa wanda ke aiki ƙasa da kusan 200°C kuma yana zama a can na dogon lokaci na warkewa mai ƙarancin zafi.

Magance matsalar zafin jiki yana haifar da wata matsala: gudanar da wutar lantarki. Silicon maras tsari yana ba da kariya mai kyau, amma gudanar da shi a gefe yana da rauni. Bayan masu ɗaukar kaya sun wuce ta heterojunction, ba za su iya tafiya mai nisa a kan saman silicon maras tsari don isa ga yatsun ƙarfe ba.

Don haka ana sanya fim ɗin oxide mai gudanarwa mai haske a saman silicon maras tsari mai ƙara, yawanci ta hanyar magnetron sputtering. ITO zaɓi ne na kowa. Fim ɗin TCO yana watsa haske, yana ba da ƙarancin juriyar tuntuɓar, kuma yana gudanar da masu ɗaukar kaya a gefe zuwa layukan grid.

A cikin tarin HJT, tuntuɓar ƙarfe ta ƙarshe tana faruwa tsakanin manna azurfa mai ƙarancin zafin jiki da aka warke da fim ɗin TCO. Wannan yana gabatar da ƙalubalen juriya guda biyu.

Na farko, manna mai ƙarancin zafin jiki ya dogara da raguwar resin polymer yayin warkewa. Raguwar tana matse ƙwayoyin azurfa tare da juna kuma a kan saman TCO. Wannan tuntuɓar jiki tsakanin ƙwayoyin tana da juriya mafi girma fiye da haɗin ƙarfe da ake samarwa ta hanyar harbin zafin jiki mai girma.

Na biyu, aikin TCO dole ne ya dace da duka doped amorphous silicon da ke ƙasa da kuma na'urar lantarki da ke sama. Ɗan iskar oxygen ko kuma Fermi-level pinning na iya haifar da ƙaramin shingen Schottky a mahadar TCO-azurfa. Wannan shingen yana ƙara juriya na jerin kuma yana rage fill factor.

Masu samar da paste suna amsawa ta hanyar inganta siffar azurfa, rarraba girman barbashi, da tsarin resin na halitta. Masana'antar HJT kuma tana binciken electroplating na jan karfe mara azurfa don wuce gona da iri da kuma iyakokin sadarwa na azurfa mai ƙarancin zafin jiki. Electroplating na iya haɓaka layukan grid na jan karfe mai tsafta kai tsaye akan TCO ko akan wani Layer na iri, yana haifar da sadarwa mai ƙarancin juriya wanda ya fi kusa da yanayin da ake so.

BC: Rawar Micrometer na Electrodes na Baya

A cikin kewayon gine-ginen hasken rana, fasahar sadarwa ta baya tana da ban sha'awa sosai amma tana da wuyar kerawa. BC ba wani abu ne na musamman ba. Tsarin gine-gine ne, tare da interdigitated back-contact cell, ko IBC, a matsayin ainihin siffarsa.

Ko yana amfani da wafer na P-type, tsarin tuntuɓar tushen TOPCon, ko tsarin HJT, ainihin ka'idar ɗaya ce: emitter, filin baya, da duk layukan grid na ƙarfe masu inganci da marasa inganci an matsar da su zuwa bayan tantanin halitta.

Cire duk na'urorin lantarki daga saman da aka haskaka yana haifar da fa'idar gani bayyananne: babu inuwar ƙarfe ta gaba. Ba tare da yatsu ko busbars da ke toshe hasken shiga ba, ƙarin photons na iya shiga tantanin halitta. Idan aka kwatanta da sel na bifacial na al'ada, yawan gajeren kewaye na tantanin BC na iya ƙaruwa da kusan 7%.

A matakin kera da rufe module, sel na BC na iya maye gurbin hanyar haɗin gaba-zuwa-baya mai siffar Z ta gargajiya tare da haɗin gefen baya mai lebur. Wannan yana rage damuwa na inji tsakanin saman gaba da baya kuma yana iya inganta juriya ga microcracks. Misali, an ba da rahoton damuwar gefen sel na LONGi HPBC ya zama ƙasa da 48% fiye da na sel na al'ada waɗanda ba BC ba, yana tallafawa ingantaccen dogaro na dogon lokaci.

Dole ne a biya ribar haske ta gaba ta hanyar ƙirar lantarki mai rikitarwa ta baya. A kan ƙarancin saman baya, yankunan emitter na P-type da yankunan filin-baya na N-type an shirya su cikin yatsu masu musaya. Dole ne a kafa na'urorin lantarki daban-daban da ingantaccen daidaito. Karfe mai inganci dole ne ya haifar da haɗin ohmic tare da yankin P-type mai nauyi, yayin da karfe mara kyau dole ne ya tuntuɓi yankin N-type mai nauyi.

Matsalolin injiniya guda uku sun fito fili.

Na farko, saboda saman gaba baya tattara wutar lantarki, duk masu ɗaukar hoto da aka samar dole ne su ratsa kaurin wafer sannan su yi tafiya a gefe a cikin girma uku zuwa wurin tuntuɓar baya da ta dace. Idan tazarar tsakanin na'urorin lantarki masu inganci da marasa kyau na baya ta yi yawa, hanyoyin jigilar masu ɗaukar hoto suna daɗe. Yiwuwar sake haɗuwa ta ƙaru kuma juriyar babban gefe ta ƙaru.

Na biyu, rage nisan jigilar gefe yana buƙatar na'urorin lantarki masu inganci da marasa kyau da ke kusa sosai. Buɗe Laser tare da buga allo, ko abin rufe fuska da ƙarfe na hoto, dole ne a daidaita su da daidaiton micrometer. Ɗan zubar da manna ko karkacewar buɗe Laser na 'yan micrometers kaɗan na iya haɗa karfen P-side da N-side kai tsaye, yana haifar da shunting mai tsanani.

Na uku, duk lambobin sadarwa masu kyau da marasa kyau suna tattara a cikin yankuna na gida a saman baya. Jimlar ingantaccen yanki na sadarwa na ƙarfe-semiconductor na iya zama ƙarami fiye da na tantanin halitta na al'ada da ke amfani da lambobin sadarwa a bangarorin biyu. Yayin da halin yanzu da aka samar da haske ya haɗu zuwa waɗannan wuraren sadarwa na gida, yawan halin yanzu ya zama babba sosai. Ko da ƙaramin lahani na sadarwa na iya haɓaka zuwa babban asarar juriya da zafi.

Ƙarshen Wasan: Daga Kamawar Haske zuwa Gudanar da Masu ɗauka

Hankalin masana'antu kan sadarwar ohmic da juriyar sadarwa yana nuna canji mai zurfi a ci gaban hasken rana. fifiko yana motsawa daga kamawar photon mai girma zuwa daidaitaccen sarrafa motsin masu ɗauka na ƙananan.

A cikin shekaru goma da PERC ta mamaye, yawancin bincike ya mayar da hankali kan ƙara haske na baya da kuma inganta kariya da kayan kamar aluminum oxide. A zamanin N-type, ci gaban kimiyyar kayan aiki ya tura kariyar sinadarai ta saman kusa da iyakarta na aiki. Mafi raunin haɗi ya motsa. Zaɓin cire masu ɗauka da jigilar kayan aiki yanzu suna taka rawa sosai wajen tantance aikin ƙarshe.

Kamfanoni da dandamali na fasaha waɗanda ke magance juriyar haɗin ƙarfe da ƙarfe yadda ya kamata za su iya gina fa'ida mai ma'ana ta inganci da farashi ta hanyar ƙananan juriyar jerin da mafi girman ma'aunin cikawa.

Faɗaɗa kasuwar TOPCon cikin sauri a 2024 ba wai kawai ta hanyar dacewa da layukan PERC da ke akwai ba. Masu kera kayan aiki da masu samar da manna suma sun inganta hanyoyin haɗin gwiwa na laser kamar LECO, ta amfani da tasirin lantarki da zafi na gida don daidaita kariyar tunnel-oxide da samar da haɗin gami mai ƙarancin juriya.

Idan muka dubi gaba, tsadar azurfa mai yawa da iyakokin juriya na jiki na manna azurfa mai ƙarancin zafi suna sa rage azurfa da rufin jan ƙarfe su zama mahimmanci. Girman sinadarin jan ƙarfe akan fim mai ɗaukar wuta ko Layer iri na iya haifar da haɗin ohmic kusan na ƙarfe yayin da kuma rage juriyar lantarki na grid ɗin kanta.

Yaƙin Ƙarshe a Ma'aunin Micrometer-Scale Interface

Tantanin rana suna da matukar damuwa ga rashin kyakkyawar haɗi saboda haɗin lantarki shine mataki na ƙarshe kuma mafi wahala a cikin zagayowar canza makamashin hasken rana.

TOPCon yana daidaita yanayin ƙonewa tare da amincin oxide na rami mai tsawon nanometer 1-2 kawai, tare da LECO yana aiki azaman ingantaccen tsarin sadarwa na gida. HJT dole ne ya samar da ingantacciyar haɗi tsakanin manna mai ɗaukar zafi da oxide mai ɗaukar haske yayin da yake kasancewa ƙasa da ƙayyadaddun iyakar zafi na 200°C. Kwayoyin BC suna sanya duka polarity a saman baya kuma suna buƙatar ƙirar micrometer wanda ke kasancewa kawai ɗan kuskuren daidaitawa daga shunting.

Waɗannan manyan ayyukan masana'antu suna nuna manufar semiconductor guda ɗaya: danne shingen Schottky, kafa ingantaccen sadarwa ohmic, da rage juriyar sadarwa zuwa kusa da sifili gwargwadon iyawa.

Yayin da fasahar tantanin silicon crystalline ke ci gaba da tafiya zuwa ga iyakar ka'idar 29.43%, ƙa'ida ɗaya tana da wuyar mantawa: sarrafa mahallin sadarwa, kuma kuna sarrafa iyakar inganci.

Ra'ayin Ooitech

Babban kalubalen samarwa ba shine kawai buga layukan grid masu kunkuntar ko ƙara wani Layer na kariya ba. Metallization dole ne a inganta shi a matsayin wani ɓangare na cikakken tsarin tantanin halitta da module, saboda ƙaramin canji a juriyar lamba zai iya shafar fill factor, halayen zafi, daidaiton soldering, da ƙarfin module na ƙarshe. Yayin da TOPCon, HJT, da BC ke ci gaba, sarrafa tsarin lamba da ingantaccen binciken lantarki zai zama mahimmanci kamar ingancin tantanin halitta na kanun labarai.