Tantanin Perovskite/Silicon Tandem: Layer ITO Interconnect 8nm ya Samu Ingantacciyar 31.80%

Gabatarwar Samfur

Kwayoyin hasken rana na monolithic perovskite/silicon tandem sune ɗayan hanyoyin da suka fi bayyana don wuce iyakar ingancin na'urori masu haɗin gwiwa guda ɗaya. Kwayar saman da kwayar ƙasa an haɗa su a jere ta hanyar interconnect recombination layer, kuma yadda wannan mu'amala take da kyau shine ya tantance ko masu ɗaukar kaya za su iya tafiya da sake haɗuwa cikin sauƙi. Matsalar tana kan saman micro-pyramid na kwayar silicon heterojunction (SHJ) ta ƙasa. Pyramids suna da tsayi kusan 600 nm, kuma a kan wannan ƙasa, recombination layer tana fama da asarar gani yayin da self-assembled monolayer (SAM) ba ta yaduwa daidai. A tsawon lokaci wannan yana rage aikin na'urar.

Wannan aikin ya auna interconnect layers na indium tin oxide (ITO) daga 2 zuwa 30 nm kuma ya gano cewa wani siririn 8 nm layer yana aiki mafi kyau a fannoni biyu lokaci guda: rage asarar gani da inganta daidaiton saman surface. Bayan an saka NiOx modification da Poly-SAM functionalization a saman, short-circuit current density ya tashi da 0.85 mA cm⁻² zuwa 20.82 mA cm⁻², power conversion efficiency ya kai 31.80%, kuma bayan sa'o'i 500 na bin diddigin madaidaicin madaidaicin wutar lantarki, na'urar har yanzu tana riƙe da 96% na ingancinta na farko.

Hanyar Gwaji

Tantanin SHJ na ƙasa ya yi amfani da wafers silicon na n-type, kauri 110 ± 10 µm, an yi masa kayan aikin KOH a bangarorin biyu zuwa pyramids kusan 600 nm tsayi. Bayan tsaftacewar RCA, PECVD ta ajiye abubuwan rufewa da kuma abubuwan da aka yi da su a jere: gefen gaba ya sami 8 nm intrinsic a-Si:H(i) da 15 nm n-type nc-SiOx:H(n), gefen baya ya sami 8 nm p-type a-Si:H(p), sannan 110 nm ITO aka fesa da 700 nm Ag aka tafasa a baya. A gaba, an ajiye kauri shida na haɗin ITO daban: 2, 5, 8, 10, 20 da 30 nm, an yi musu annealing a 180°C kuma an yi musu laser scribing.

Tantanin perovskite na sama ya bi wannan hanya. An fara yi wa tantanin ƙasa annealing da UV-ozone, sannan aka ajiye NiOx ta hanyar magnetron sputtering, sannan aka sake yin annealing da UV-ozone. A cikin akwatin safa na nitrogen, an yi spin-coating na Poly-SAM (0.5 mg mL⁻¹, sauran ƙarfi methanol da chlorobenzene a 1:1) kuma an yi annealing a 100°C. Perovskite shine Cs₀.₀₅FA₀.₈MA₀.₁₅Pb(I₀.₇₅₅Br₀.₂₅₅)₃ tare da bandgap 1.68 eV, an yi spin-coating a matakai biyu, tare da zubar da chlorobenzene a matsayin antisolvent yayin matakin gudu mai sauri kuma an gasa a 100°C na mintuna 20. An gyara saman da PDADI, sannan aka yi thermal evaporation na C₆₀, aka yi girma na SnO₂ ta ALD, aka fesa 45 nm IZO, aka tafasa Ag electrodes, kuma a ƙarshe aka rufe shi da fim ɗin anti-reflection na MgF₂.

Fa'idodin Fasaha

Abubuwan Optoelectronic na Layer Haɗin ITO

(a) Rsh, Ne da µ a kan kauri (n = 10); (b) ɗaukar haske da haskakawa na Layer ITO; (c) aikin aiki a kan kauri; (d) canjin aikin aiki (ΔWF) kafin da bayan maganin NiOx a kauri daban-daban; (e) zane na rarraba SAM akan NiOx-modified ITO; (f) taswirar yuwuwar saman KPFM na 2-30 nm interconnect ITO; (g) taswirar yuwuwar saman KPFM na 8 nm interconnect ITO kafin da bayan aikin NiOx da Poly-SAM.

Ma'aunin tasirin Hall ya nuna juriya na takarda yana raguwa yayin da kauri ya karu, wanda shine abin da kuke tsammani. Yawan masu ɗaukar wuta ya tsaya daidai tsakanin 8 zuwa 30 nm, kusan 2.8 zuwa 3.5 × 10²⁰ cm⁻³, amma da zarar ka wuce 8 nm sai ya fara raguwa. Motsi ya ragu kaɗan kawai a cikin taga 2 zuwa 8 nm, alama ce cewa mutuncin fim ɗin yana nan. 8 nm ya zo daidai a wurin da juriya na takarda ya yi ƙasa sosai kuma aikin lantarki bai rushe ba.

(a) Hoton XPS mai ƙarfi O 1s na ITO Layer a saman c-Si bottom cell mai rubutu. (b) Hotunan XPS masu ƙarfi na ITO Layer 8 nm a saman c-Si bottom cell mai rubutu kafin da bayan gyaran NiOx. (c) Hoton SEM na giciye na ITO Layer 8 nm a saman c-Si bottom cell mai rubutu. (d) Taswirorin EDS masu dacewa na yankin da aka mayar da hankali na samfurin ITO 8 nm, tare da alamar launi-element a saman dama.

A gani, rage kaurin ITO ya jawo duka haske da sha a sama da 450 nm, saboda tsangwama mai lalacewa da kuma raunin sha na free-carrier.

• UPS ya nuna aikin aiki yana tashi yayin da kauri ya ragu, kuma bayan gyaran NiOx da annealing, canjin aikin aiki ya kai kololuwa a 8 nm.

• Binciken yanki na KPFM ya nuna cewa ITO kasa da 10 nm ya danne duk wuraren shunt na gida, tare da 8 nm yana ba da daidaito mafi kyau.

• XPS ya gano wani bayani mai ban sha'awa: saman ITO 8 nm yana da yawan hydroxyl mafi girma fiye da na 20 nm, kuma waɗannan hydroxyls sun kafa haɗin gwiwa In─O─Ni tare da NiOx, yana barin NiOx ya bazu daidai kuma ya manna sosai. Bayan gyaran, siginar In ya ɓace gaba ɗaya, wanda ke nufin ingancin rufin yana da kyau kuma ya kafa tushe mai kyau don haɗin kai na SAM da ke biyo baya.

• SEM da EDS sun tabbatar da cewa ITO na 8 nm ya ba da rufin da ya dace a kan rubutun.

Ayyukan Tantanin Rana na Tandem Cell

(a) Bambancin Jsc a cikin tandem cells na perovskite/silicon; (b) bambancin Voc; (c) bambancin FF; (d) bambancin PCE; (e) hoton SEM na sashin giciye na tandem cell akan ITO; (f) tsarin XRD na fim ɗin perovskite akan ITO; (g) PL spectrum na tsayayyen yanayi na fim ɗin perovskite akan ITO; (h) daidaitattun PL curves na tsayayyen yanayi; (i) TRPL decay spectra na wucin gadi na fim ɗin perovskite akan ITO; (j) hoton photoluminescence na tandem cell, yanki mai aiki 0.928 cm².

Duk kauri shida na haɗin ITO sun yi gwajin J-V.

• Ƙasa da 5 nm, Voc da FF sun ragu sosai. Ba a iya tura Voc sama da 1.7 V ba kuma PCE ya zo daidai da 21.68%, musamman saboda fim ɗin ya riga ya katse akan rubutun dala.

• 8 nm shine mafi kyawun amsa. SEM na giciye ya nuna hatsin perovskite sun fi girma kuma sun fi yawa a kan ITO mai siririn sosai (kasa da 10 nm), kuma XRD ya tabbatar da ingancin crystalline mafi kyau, kodayake samfurin 5 nm ya fitar da kololuwar PbI₂, alamar cewa lalacewa ta riga ta fara. Tsayayyen PL intensity ya haura daga 30 nm zuwa 8 nm, sannan ya sake faduwa, don haka 8 nm ya tsaya daidai a kololuwa, yayi daidai da mafi karancin yawan lahani.

• Kololuwar siffa ta PL da aka daidaita ba ta canza ba, ma'ana yanayin sake hadewar da ba ta haskaka ba a kan iyaka ya kasance iri daya. Tsawon rayuwar masu dauke da TRPL suma sun fi tsayi a 8 nm. Wadannan sakamakon sun samo asali ne daga karfin dipole mai karfi da kuma aikin aiki mai daidaito wanda Poly-SAM ke kawowa, yana daukaka Voc da FF tare. Hoton PL kuma ya fallasa rashin daidaito na kasa da micrometer a cikin sub-cell na perovskite, amma ITO mai siririn da juriya mai girma yana da juriya mai yawa a gefe, don haka isar da shunting na gida an kewaye shi yadda ya kamata kuma bai jawo dukkan na'urar ba.

Inganta Yawan Gudun Wutar Lantarki

(a) EQE na perovskite da silicon sub-cells a karkashin 8 nm ITO interconnect layer; (b) EQE na farko da ingantattun tandem cells.

An ƙididdige matakin IZO na gaba ta hanyar ma'aunin inganci Aw × Rsheet⁻¹, kuma 45 nm ya fi kyau. Rage ITO interconnect daga 20 nm zuwa 10 nm zuwa 8 nm ya tura matsakaicin Jsc daga 19.78 zuwa 19.96 zuwa 20.55 mA cm⁻². Matsakaicin halin yanzu na EQE na perovskite da silicon sub-cells sun kasance 20.64 da 20.51 mA cm⁻² bi da bi, daidai da bayanan J-V. Idan aka kwatanta da 20 nm ITO, 8 nm ya ba da perovskite sub-cell ƙarin 0.06 mA cm⁻² da silicon sub-cell ƙarin 0.47, tare da gudummawar infrared kusa daga silicon bottom cell ta sami mafi yawa.

Aikace-aikacen Samfur

Aiki da Karko na Na'urar

(a) Tsarin tsari da hoto na perovskite/silicon tandem solar cell; (b) hoton SEM cross-section na tandem cell; (c) J-V curves na perovskite da silicon sub-cells guda ɗaya; (d) J-V curve na wakilci na cell mai aiki mai girma; (e) bambancin Rs a cikin perovskite/silicon tandem cells da aka gina akan 30 nm zuwa 2 nm ITO interconnect layers; (f) sakamakon gwajin MPPT na tandem cell da aka rufe a ƙarƙashin hasken rana 1.

Da zarar an daidaita kaurin haɗin ITO, matsakaicin PCE na na'urorin tandem ya tashi daga 28.64% zuwa 30.67%. ITO na 2 nm yana ɗauke da juriya mai yawa Rs har 41.26 Ω, don haka haɗin jerin ya karye. Rs na 8 nm ya yi ƙasa sosai, juriya na ciki ya ragu, kuma asarar wutar lantarki kusa da madaidaicin ƙarfin wuta ya ragu. Game da karko, tantanin tandem na ITO 8 nm ya riƙe 96% na farkon PCE bayan sa'o'i 500 na MPPT, yayin da na 20 nm ya riƙe kawai 90%, yana sanya shi cikin mafi karko a cikin dangin haɗin TCO/SAM. Me yasa yake da karko? Rufe Poly-SAM yana da yawa, kuma crystallization na perovskite yana inganta tare da shi.

Yankunan da SAM ya rufe suna da ƙarancin ƙarfin saman, kuma ƙungiyoyin phosphonic acid suna daidaitawa da Pb²⁺ da FA⁺, suna jagorantar perovskite don girma a hankali kuma cikin tsari, don haka hatsi suna fitowa manya. A kan yankunan ITO marasa rufe babu irin wannan tasirin samfuri, nucleation yana gudana da sauri kuma ba shi da tsari, kuma hatsi suna ƙarewa ƙanana tare da iyakokin hatsi da yawa. A kan haka, Poly-SAM yana kare haɗin da ba a cika ba da kuma guraben halide a mahadar, ƙaurawar halide tana dannewa, kuma lalacewa tana raguwa. Matsayin saman daidaitaccen da ITO mai sirara kanta ke kawowa yana taimakawa, kuma tare da abubuwa da yawa suna haɗuwa, rayuwar na'urar tana ƙaruwa.

Gwajin kwanciyar hankali na MPPT a nan yana amfani da hasken rana na LED na 3A+ a matsayin tushen haske na tsufa, wanda zai iya sarrafa zafin tantanin halitta da yanayin da ke kewaye ta hanyoyi da yawa don gudanar da gwajin kwanciyar hankali na dogon lokaci.

Ƙarshe da Hasashen gaba

8 nm shine mafi kyawun kauri na haɗin ITO don sel tandem perovskite/silicon. Wannan kauri yana ɗaga ingancin crystalline na perovskite kuma yana rage sha na parasitic. Bayan gyaran NiOx da aikin Poly-SAM, yuwuwar saman ya zama mafi daidaituwa kuma canjin aikin aiki ya fi bayyana. Saman ITO na 8 nm yana ɗauke da hydroxyls da yawa, NiOx yana yaduwa daidai, SAM yana tattare sosai, kuma an tabbatar da rufin da ya dace akan rubutu ta SEM da EDS. Idan aka kwatanta da ITO na 20 nm na al'ada, na'urar da aka inganta ta kai ingancin zakara na 31.80%, tare da Jsc ya tashi da 0.85 mA cm⁻² kuma 96% na ingancin farko ya ci gaba bayan sa'o'i 500 na MPPT.

Idan muka duba gaba, har yanzu akwai abubuwa da yawa da za a inganta. Za a iya ƙara inganta yanayin bayan fata da mai haskaka haske don ƙarfafa tarkon haske a cikin tantanin silicon na ƙasa, ƙara yawan wutar lantarki, da kuma daidaita daidaiton wutar lantarki. FF da Voc har yanzu sune matsalolin da ke iyakance ingantaccen aiki, don haka dabarun karewa na tuntuɓar suna buƙatar zurfafa. Hanyoyin haɗin kai daban-daban kamar tunnel junctions na silicon suma sun cancanci a gwada. Idan ana maganar haɓaka zuwa samarwa, dole ne a daidaita kaurin TCO da tsarin grid na ƙarfe tare, don kada inuwa ta yi yawa a kan manyan wurare kuma ba a shafa wutar lantarki a gefe ba. Kuma tare da ƙaramin kauri, amfani da indium yana raguwa, don haka yana da amfani ga dorewa.

Ra'ayin Ooitech

Abin da ya fi fice a nan shi ne cewa 'yan nanometer na ITO na iya canza duka haske da crystallization a kan wannan pyramid texture na 600 nm, kuma wannan matsalar rufewa daidai ita ce take bayyana lokacin da layukan tandem suka tashi daga lab coupons zuwa cikakkun modules. A kan filin samarwa, matakan tabber-stringer, layup da lamination duk suna buƙatar mutunta waɗannan interconnect da SAM interfaces masu rauni, wanda shine inda kayan aikin layin module masu daidaitawa suke samun darajarsu. Idan kana son ganin yadda waɗannan hanyoyin suke a ainihin girman masana'anta, tashar YouTube ta Ooitech a www.youtube.com/ooitech tana da daraja a bi.