Gabatarwar Samfur

Tantanin hasken rana na monolithic perovskite/silicon tandem na ɗaya daga cikin hanyoyin da suka fi bayyana don wuce iyakar ingancin na'urori guda ɗaya. Tantanin sama da tantanin ƙasa an haɗa su a jere ta hanyar interconnect recombination layer, kuma yadda wannan mu'amala take da kyau yana tantance ko masu ɗaukar kaya za su iya tafiya da sake haɗuwa cikin sauƙi. Matsalar tana kan saman micro-pyramid na tantanin silicon heterojunction (SHJ) na ƙasa. Pyramids suna da tsayi kusan 600 nm, kuma a wannan yanayin, recombination layer yana fama da asarar gani yayin da self-assembled monolayer (SAM) baya yaduwa daidai. A tsawon lokaci wannan yana rage aikin na'urar.

Wannan aikin ya auna interconnect layers na indium tin oxide (ITO) daga 2 zuwa 30 nm kuma ya gano cewa ultrathin 8 nm layer yana aiki mafi kyau a fannoni biyu lokaci guda: rage asarar gani da inganta daidaiton saman surface. Da zarar an saka NiOx modification da Poly-SAM functionalization a saman, short-circuit current density ya tashi da 0.85 mA cm⁻² zuwa 20.82 mA cm⁻², power conversion efficiency ya kai 31.80%, kuma bayan sa'o'i 500 na maximum power point tracking, na'urar har yanzu tana riƙe da 96% na ingancinta na farko.

Hanyar Gwaji

Tantanin SHJ na ƙasa ya yi amfani da wafers silicon na n-type, kauri 110 ± 10 µm, an yi masa textured biyu-biyu da KOH zuwa pyramids kimanin 600 nm tsayi. Bayan tsaftacewar RCA, PECVD ta ajiye passivation da doped layers a jere: gaba ta sami 8 nm intrinsic a-Si:H(i) da 15 nm n-type nc-SiOx:H(n), baya ta sami 8 nm p-type a-Si:H(p), sannan aka sputter 110 nm ITO kuma aka evaporate 700 nm Ag a baya. A gaba, an ajiye kauri shida na ITO interconnect daban: 2, 5, 8, 10, 20 da 30 nm, an yi annealing a 180°C kuma an yi laser scribing.

Tantanin perovskite na sama ya bi wannan hanya. An fara yi wa tantanin ƙasa annealing da UV-ozone treatment, sannan aka ajiye NiOx ta magnetron sputtering, sannan aka sake yin annealing da UV-ozone. A cikin nitrogen glovebox, an yi spin-coating na Poly-SAM (0.5 mg mL⁻¹, solvent methanol da chlorobenzene a 1:1) kuma an yi annealing a 100°C. Perovskite shine Cs₀.₀₅FA₀.₈MA₀.₁₅Pb(I₀.₇₅₅Br₀.₂₅₅)₃ tare da bandgap 1.68 eV, an yi spin-coating a matakai biyu, tare da zubar da chlorobenzene a matsayin antisolvent yayin matakin gudu mai girma kuma an gasa a 100°C na mintuna 20. An gyara saman da PDADI, sannan aka evaporate C₆₀, aka yi girma SnO₂ ta ALD, aka sputter 45 nm IZO, aka evaporate Ag electrodes, kuma a ƙarshe aka rufe stack da MgF₂ anti-reflection film.

Fa'idodin Fasaha

Kaddarorin Optoelectronic na ITO Interconnect Layer

(a) Rsh, Ne da µ a kan kauri (n = 10); (b) ɗaukar haske da haskakawa na Layer ITO; (c) aikin aiki a kan kauri; (d) canjin aikin aiki (ΔWF) kafin da bayan maganin NiOx a kauri daban-daban; (e) zanen rarraba SAM akan NiOx-modified ITO; (f) taswirar yuwuwar saman KPFM na 2-30 nm interconnect ITO; (g) taswirar yuwuwar saman KPFM na 8 nm interconnect ITO kafin da bayan NiOx da Poly-SAM functionalization.

Ma'aunin tasirin Hall ya nuna juriya na takarda yana raguwa yayin da kaurin fim ya karu, wanda shine abin da kuke tsammani. Yawan masu ɗaukar wuta ya tsaya daidai tsakanin 8 zuwa 30 nm, kusan 2.8 zuwa 3.5 × 10²⁰ cm⁻³, amma da zarar ka kasa 8 nm ya fara raguwa. Motsi ya ragu kadan kawai a cikin taga kunkuntar 2 zuwa 8 nm, alamar cewa mutuncin fim din yana nan. 8 nm ya sauka daidai a wurin da juriya na takarda ya yi ƙasa sosai kuma aikin lantarki bai rushe ba.

(a) Hoton XPS mai ƙarfi na O 1s wanda aka daidaita kololuwa na Layer ITO a saman tantanin c-Si mai rubutu. (b) Hotunan XPS masu ƙarfi na Layer ITO 8 nm a saman tantanin c-Si mai rubutu kafin da bayan gyaran NiOx. (c) Hoton SEM na giciye na Layer ITO 8 nm a saman tantanin c-Si mai rubutu. (d) Taswirorin abubuwan EDS masu dacewa na yankin da aka mayar da hankali na samfurin ITO 8 nm, tare da ma'anar launi-abu a saman dama.

A gani, rage kaurin ITO ya jawo raguwar haske da sha sama da 450 nm, saboda tsangwama mai lalacewa da kuma raunin sha na 'yanci.

• UPS ya nuna aikin aiki yana ƙaruwa yayin da kauri ya ragu, kuma bayan gyaran NiOx da dumama, canjin aikin aiki ya kai kololuwa a 8 nm.

• Binciken yanki na KPFM ya nuna cewa ITO kasa da 10 nm ya danne duk wuraren shunt na gida, tare da 8 nm yana ba da daidaito mafi kyau.

• XPS ya gano wani bayani mai ban sha'awa: saman ITO 8 nm yana da yawan hydroxyl mafi girma fiye da na 20 nm, kuma waɗannan hydroxyls sun kafa haɗin gwiwa In─O─Ni tare da NiOx, yana barin NiOx ya bazu daidai kuma ya manna sosai. Bayan gyaran, siginar In ya ɓace gaba ɗaya, wanda ke nufin ingancin Layer rufewa yana da kyau kuma ya kafa tushe mai kyau don haɗin kai na SAM da ke biyo baya.

• SEM da EDS sun tabbatar da cewa ITO na 8 nm ya ba da rufin da ya dace akan rubutun.

Ayyukan Tantanin Tandem na Photovoltaic

(a) Bambancin Jsc a cikin perovskite/silicon tandem cells; (b) bambancin Voc; (c) bambancin FF; (d) bambancin PCE; (e) hoton SEM na giciye na tandem cell akan ITO; (f) tsarin XRD na perovskite film akan ITO; (g) PL spectrum na tsayayyen yanayi na perovskite film akan ITO; (h) daidaitattun PL curves na tsayayyen yanayi; (i) transient TRPL decay spectra na perovskite film akan ITO; (j) hoton photoluminescence na tandem cell, yanki mai aiki 0.928 cm².

Duk kauri shida na ITO interconnect sun yi gwajin J-V.

• Kasa da 5 nm, Voc da FF sun ragu sosai. Voc ba zai iya wuce 1.7 V ba kuma PCE ya zo daidai da 21.68%, musamman saboda fim ɗin ya riga ya katse akan rubutun pyramid.

• 8 nm shine mafi kyawun amsa. SEM na giciye ya nuna hatsin perovskite sun fi girma kuma sun fi yawa a kan ITO mai siririn sosai (kasa da 10 nm), kuma XRD ya tabbatar da ingancin crystalline mafi kyau, kodayake samfurin 5 nm ya fitar da kololuwar PbI₂, alamar lalacewa ta riga ta fara. Ƙarfin PL na tsayayyen yanayi ya haura daga 30 nm zuwa 8 nm, sannan ya sake faɗuwa, don haka 8 nm ya tsaya daidai a kololuwa, yana daidaita mafi ƙarancin yawan lahani.

• Kololuwar sifa ta PL ba ta canza ba, ma'ana yanayin sake haɗuwa mara haske a fuskar sadarwa ya kasance iri ɗaya. Rayuwar masu ɗaukar TRPL suma sun fi tsayi a 8 nm. Waɗannan sakamakon sun samo asali ne daga ƙarfin dipole mai ƙarfi da aikin aiki mafi daidaituwa da Poly-SAM ke kawowa, yana ɗaga Voc da FF tare. Hoton PL kuma ya fallasa rashin daidaituwa na ƙarƙashin micrometer a cikin ƙaramin tantanin perovskite, amma ITO mai siririn sosai mai juriya yana da juriya mai yawa a gefe, don haka isar da shunting na gida an kewaye shi yadda ya kamata kuma bai jawo duka na'urar ba.

Inganta Girman Halin Yanzu

(a) EQE na ƙananan tantanin perovskite da silicon a ƙarƙashin 8 nm ITO interconnect layer; (b) EQE na farko da ingantaccen tandem.

An ƙididdige matakin IZO na gaba ta hanyar ma'aunin inganci Aw × Rsheet⁻¹, kuma 45 nm ya fi kyau. Rage interconnect ITO daga 20 nm zuwa 10 nm zuwa 8 nm ya tura matsakaicin Jsc daga 19.78 zuwa 19.96 zuwa 20.55 mA cm⁻². Matsakaicin halin yanzu na EQE na perovskite da silicon sub-cells sune 20.64 da 20.51 mA cm⁻² bi da bi, daidai da bayanan J-V. Idan aka kwatanta da 20 nm ITO, 8 nm ya ba da perovskite sub-cell ƙarin 0.06 mA cm⁻² da silicon sub-cell ƙarin 0.47, tare da gudummawar infrared na kusa daga silicon bottom cell ta sami mafi yawa.

Aikace-aikacen Samfur

Ayyukan Na'ura da Kwanciyar Hankali

(a) Tsarin tsari da hoto na perovskite/silicon tandem solar cell; (b) hoton SEM giciye-sashe na tandem cell; (c) J-V curves na perovskite da silicon sub-cells guda ɗaya; (d) wakilcin J-V curve na cell mai aiki mai girma; (e) bambancin Rs a cikin perovskite/silicon tandem cells da aka gina akan 30 nm zuwa 2 nm ITO interconnect layers; (f) Sakamakon gwajin MPPT na tandem cell da aka rufe a ƙarƙashin hasken rana 1.

Da zarar an daidaita kaurin haɗin ITO, matsakaicin PCE na na'urorin tandem ya tashi daga 28.64% zuwa 30.67%. ITO na 2 nm yana ɗauke da juriya mai yawa Rs har 41.26 Ω, don haka haɗin jerin ya karye. Rs na 8 nm ya yi ƙasa da yawa, juriya na ciki ya ragu, kuma asarar wutar lantarki kusa da madaidaicin ƙarfin wuta ya ragu. Game da karko, tantanin tandem na ITO 8 nm ya riƙe 96% na farkon PCE bayan sa'o'i 500 na MPPT, yayin da na 20 nm ya riƙe kawai 90%, yana sanya shi cikin mafi karko a cikin dangin haɗin TCO/SAM. Me yasa yake da karko? Rufe Poly-SAM yana da yawa, kuma crystallization na perovskite yana inganta tare da shi.

Yankunan da SAM ya rufe suna da ƙarancin ƙarfin saman, kuma ƙungiyoyin phosphonic acid suna daidaitawa da Pb²⁺ da FA⁺, suna jagorantar perovskite don girma a hankali kuma cikin tsari, don haka hatsi suna fitowa manya. A kan yankunan ITO marasa rufe babu irin wannan tasirin samfuri, nucleation yana gudana da sauri kuma ba shi da tsari, kuma hatsi suna ƙarewa ƙanana tare da iyakokin hatsi da yawa. Bugu da ƙari, Poly-SAM yana kare haɗin da ba a cika ba da kuma guraben halide a mahadar, ƙaurawar halide tana danne, kuma lalacewa tana raguwa. Matsayin saman da ITO mai sirara da kansa yake kawowa yana taimakawa, kuma tare da abubuwa da yawa suna haɗuwa, rayuwar na'urar tana ƙaruwa.

Gwajin kwanciyar hankali na MPPT a nan yana dogara ne akan na'urar kwaikwayo ta hasken rana ta LED mai darajar 3A+ a matsayin tushen haske na tsufa, wanda zai iya sarrafa zafin tantanin halitta da yanayin da ke kewaye ta hanyoyi da yawa don gudanar da gwajin kwanciyar hankali na dogon lokaci.

Ƙarshe da Hasashen gaba

8 nm shine mafi kyawun kauri na haɗin ITO don sel tandem na perovskite/silicon. Wannan kauri yana ɗaga ingancin crystalline na perovskite kuma yana rage ɗaukar parasitic. Bayan gyaran NiOx da aikin Poly-SAM, ƙarfin saman yana ƙara daidaito kuma canjin aikin aiki ya fi bayyana. Saman ITO na 8 nm yana ɗauke da hydroxyls da yawa, NiOx yana yaduwa daidai, SAM yana tattare sosai, kuma an tabbatar da rufin da ya dace akan rubutu ta hanyar SEM da EDS. Idan aka kwatanta da ITO na al'ada na 20 nm, na'urar da aka inganta ta kai ga nasara mai inganci na 31.80%, tare da Jsc ya tashi da 0.85 mA cm⁻² kuma 96% na ingancin farko ya ci gaba bayan sa'o'i 500 na MPPT.

Idan muka duba gaba, har yanzu akwai abubuwa da yawa da za a inganta. Za a iya tace yanayin baya da kuma madubin haske don ƙarfafa tarkon haske a cikin tantanin silicon na kasa, ƙara yawan wutar lantarki, da kuma daidaita daidaiton wutar lantarki. FF da Voc har yanzu sune matsalolin da ke hana ingantaccen aiki, don haka dabarun karewa na tuntuɓar suna buƙatar zurfafa. Hanyoyin haɗin kai daban-daban kamar tunnel junctions na silicon sun cancanci a gwada su. Idan ana maganar haɓaka zuwa samarwa, dole ne a daidaita kaurin TCO da tsarin grid na metallization tare, don kada inuwa ta yi nauyi a kan manyan wurare kuma ba a shafa conduction ta gefe ba. Kuma tare da sirara, amfani da indium yana raguwa, don haka yana da amfani ga dorewa.

Ra'ayin Ooitech

Abin da ya fi fice a nan shi ne cewa 'yan nanometers na ITO na iya canza duka optics da crystallization a kan wannan pyramid texture na 600 nm, kuma wannan matsalar rufewa daidai take ita ce abin da ke faruwa lokacin da layukan tandem suka tashi daga lab coupons zuwa cikakkun modules. A kan filin samarwa, matakan tabber-stringer, layup da lamination duk suna buƙatar mutunta waɗannan interconnect da SAM interfaces masu rauni, wanda shine inda kayan aikin layin module masu daidaitawa suke samun darajar su. Idan kana son ganin yadda waɗannan matakai suke a ainihin girman masana'anta, tashar YouTube ta Ooitech a www.youtube.com/ooitech tana da daraja a bi.