UVID a cikin Rana ta TOPCon: Gwajin IV Ba tare da Tuntuɓi ba yana Bibiyar Lalacewar Passivation da Asarar Ƙarfin 6.72%
Teburin Abubuwan Ciki
Gabatarwa
Sel na hasken rana na TOPCon yanzu sun mamaye kasuwar PV saboda ƙarfin passivation na saman da kuma lambobin zaɓin masu ɗaukar kaya. Amma aiki a waje yana fallasa wani wuri mai rauni na gaske: lalacewar da ke haifar da UV, ko UVID. Bayan haskakawar UV60, inganci yana raguwa har zuwa 6.72%.
Yawancin ayyukan da suka gabata sun zargi UVID da manyan photons masu ƙarfi da ke karya Si–H bonds da sakin hydrogen kyauta. Wannan ɓangare ne kawai na labarin. Bakan UV na hasken rana ya kai faɗin kewayon makamashi na 3.1–4.43 eV, don haka mu'amalarsa da saman gaba ya wuce hanyar karyewar Si–H guda ɗaya. Kuma gaban Al₂O₃ / SiNₓ yana da rauni sosai a kan UV fiye da gefen baya.
Gwajin IV mara lamba yana taimakawa sosai a nan. Ba ya lalata kayan, ba ya amfani da kayan amfani, yana aiki cikin sauri a millisecond, yana aiki da BC da kuma ƙirar da ba ta da busbar, kuma yana ɗaukar sigogin IV, EQE da PL a lokaci guda.
Wannan binciken yana amfani da ToF-SIMS da XPS mai zurfin bayanai don bin diddigin rarraba abubuwa da canje-canjen haɗin sinadarai a cikin Al₂O₃ / SiNₓ kafin da bayan UV60. Sakamakon: Rushewar haɗin N–H shine tushen hydrogen na biyu tare da Si–H. Haɗin Al–O a cikin amorphous Al₂O₃ yana rushewa ta hanyar UV kuma yana haifar da ɗimbin guraben oxygen. Hanyoyin hydrogen da oxygen suna taruwa kuma suna ƙara lalata sake haɗuwa a saman, suna ba da kyakkyawar hanya don inganta amincin passivation.
Hanyar Gwaji
(a) Tsarin tsarin hasken rana na TOPCon (b) samfurin tsarin gaba mai ma'ana (c) samfurin tsarin baya mai ma'ana
An shirya samfuran tsarin gaba mai ma'ana (SiNₓ/Al₂O₃/n-Si/Al₂O₃/SiNₓ) da samfuran tsarin baya mai ma'ana (tare da SiOₓ/n⁺-poly-Si). An gudanar da tsufa na UV a matakin module. Babban tushen haske shine UV-A tare da kusan 11% UV-B, a ƙarƙashin 60°C da 30% zafi.
Ƙarfin hasken UV mai haske
Tsarin Gaba vs Baya: Kwatanta Juriyar UV
Canje-canje a (a) τeff a ƙaddarar allurar mai ɗaukar nauyi na 1×10¹⁵ cm⁻³, (b) iVoc, da (c) J₀ na gefe ɗaya don samfuran tsarin gaba da baya masu daidaitawa yayin fallasa UV
Tsarin baya mai daidaitawa da kyar ya lalace bayan fallasa UV na 60 kWh·m⁻². Tsarin poly-Si mai kauri 120 nm yana sha kusan duk hasken UV kuma yana ba da kariya mai inganci.
Tsarin gaba ya ba da labari daban. τeff ya ragu daga 2895.6 μs zuwa 1552.8 μs. iVoc ya faɗi daga 735.5 mV zuwa 715.2 mV. J₀ na gefe ɗaya ya tashi zuwa 18.4 fA·cm⁻², kusan sau uku na ƙimar farko. Kariyar Al₂O₃ / SiNₓ ta lalace sosai.
Juyin Halittar Sinadaran
Zurfin bayanan ƙarfi na (a) hydrogen da (b) oxygen a cikin samfurin tsarin gaba mai daidaitawa da aka goge kafin da bayan UV60, wanda ToF-SIMS ya auna
ToF-SIMS ya nuna yawan hydrogen yana ƙaruwa a fili bayan fallasa UV, musamman a cikin Layer SiNₓ. N 1s XPS zurfin bayanan ya nuna cewa a mahadar SiNₓ / Al₂O₃, rabon haɗin N–H ya faɗi daga 9.64% zuwa 5.97%. Don haka karya haɗin N–H shine tushen hydrogen na biyu bayan Si–H. Hydrogen ɗin da aka saki yana yaduwa zuwa yankin saman SiNₓ kuma yana sake haɗuwa da silicon a can, wanda shine dalilin da yasa rabon N–H a zahiri ke ƙaruwa kusa da wannan saman.
Oxygen yana ba da labari mai mahimmanci daidai. Oxygen a cikin Layer Al₂O₃ ya ragu kadan, yayin da oxygen a interfaces SiNₓ/Al₂O₃ da Al₂O₃/Si ya karu. Wannan yana nuna cewa Al–O bonds suna karyewa kuma free oxygen yana ƙaura zuwa waje. Ƙarfin Al–O bond a cikin crystal mai kyau kusan 5.3 eV ne. Amma a cikin amorphous Al₂O₃, aluminum ions da ba su da cikakken coordination da oxygen vacancies suna kama electrons kuma su zama masu caji mara kyau, suna rage activation energy don karyewar Al–O bond da ke kusa zuwa kusan 2.4 eV. Wannan yana nufin hasken UV na 400 nm (3.1 eV) ya isa ya karya su.
N 1s depth-profiling XPS spectra a interfaces daban-daban na Layer Al₂O₃/SiNₓ kafin da bayan UV60, tare da fitted curves don N–Si (397.5 eV) da N–H (399.5 eV) bonds
O 1s XPS yana nuna lattice oxygen (OI) yana canzawa zuwa oxygen vacancies (OII). A cikin Al 2p spectra, rabon Al₂O₃ ya fadi daga 69.99% zuwa 60.36% yayin da Al–OH ya tashi daga 30.01% zuwa 39.64%. A cikin Si 2p spectra, Si²⁺ ya karu yayin da silicon mai girma valence ya ragu. Electrons da aka saki lokacin da oxygen vacancies suka samu suna rage silicon daga yanayin oxidation mafi girma. Gaba daya, waɗannan canje-canje a cikin bonding na oxygen, aluminum da silicon suna nuna cewa ingancin fim ɗin Al₂O₃ ya riga ya lalace.
Rashin Ayyukan Lantarki
EQE da reflectance curves na TOPCon solar cell kafin da bayan UV60
Canji a juriyar tuntuɓar gaba na tantanin rana na TOPCon yayin bayyanar UV60
Reflectance ya kasance ba canzawa bayan UV60. EQE ya nuna raguwa matsakaici a yankin gajeren zango ƙasa da 500 nm, daidai da ƙarar sake haɗuwa a saman gaba. Juriyar tuntuɓar gaba ta haura kusan layi da adadin UV, ta kai 4.1 mΩ·cm², kusan sau 8.6 mafi girma. Dalili: hydrogen da oxygen kyauta da aka samar a cikin layin kariya suna yaduwa zuwa ƙarshen lantarki kuma suna shiga cikin halayen redox. UV kuma yana canza kwayoyin ruwa a saman azurfa zuwa radicals hydroxyl, kuma tare suna lalata ƙarfen lantarki.
Ƙimar raguwar aikin lantarki yayin bayyanar UV60: (a) Voc (b) Jsc (c) FF (d) Eff
Voc ya ragu 3.46% dangantaka, wanda aka motsa ta hanyar lalacewar kariyar saman gaba da haɓakar J₀. FF ya faɗi 2.82%, wanda aka motsa ta hanyar mafi girman juriyar tuntuɓar gaba. Jsc kawai ya ragu 0.64%, tunda asarar EQE a gajeren zango ta iyakance. Ƙarshen asarar ingancin juyar da haske zuwa wutar lantarki ya kai 6.72%.
Ƙarshe
Tsarin SiNₓ/Al₂O₃ na gaba na sel TOPCon yana da rauni sosai a ƙarƙashin UV fiye da tsarin baya. A ƙarƙashin UV, haɗin Si–H da N–H suna karyewa a jere kuma suna sakin hydrogen kyauta. Haɗin Al–O a cikin amorphous Al₂O₃ yana karyewa a ƙarƙashin UV, yana sakin oxygen kyauta kuma yana haifar da ɗimbin guraben oxygen. Al₂O₃ yana juyawa zuwa Al–OH kuma ƙimar silicon tana canzawa. Waɗannan hanyoyin lalacewa guda biyu, hydrogen da oxygen, suna taruwa kuma suna ƙara tsananta sake haɗuwa a saman. Ƙara haɓakar juriyar tuntuɓar gaba, sakamakon shine asarar inganci 6.72%. Aikin yana ba da cikakken bayani mai amfani don fahimtar UVID na TOPCon da kuma inganta dogaro na dogon lokaci na yadudduka na kariya.
Ra'ayin Ooitech
UVID yana ci gaba da tabbatar da cewa tsarin gaba shine inda ake gwada dogaro da gaske, don haka yadda kuke ginawa da sarrafa ajiyar SiNₓ/Al₂O₃ da rufewa akan layin module yana da mahimmanci kamar girke-girke na cell. A kan layukan mu na turnkey TOPCon da PERC module muna ganin wannan darasi yana faruwa a kan layup, lamination da gefen EL, ƙananan zaɓin tsari suna yanke shawarar ko allunan suna tsayawa a waje tsawon shekaru. Idan kuna son ƙarin ra'ayoyi na hannu daga filin masana'anta, tashar YouTube ta Ooitech a www.youtube.com/ooitech tana da daraja a bi.
